Search Results - "Szkudlarek, K."

Stack of two III-nitride laser diodes interconnected by a tunnel junction by Siekacz, M, Muziol, G, Hajdel, M, Żak, M, Nowakowski-Szkudlarek, K, Turski, H, Sawicka, M, Wolny, P, Feduniewicz-Żmuda, A, Stanczyk, S, Moneta, J, Skierbiszewski, C

“…We demonstrate a stack of two III-nitride laser diodes (LDs) interconnected by a tunnel junction grown by plasma-assisted molecular beam epitaxy. Hydrogen-free…”
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Distributed-feedback blue laser diode utilizing a tunnel junction grown by plasma-assisted molecular beam epitaxy by Muziol, G., Hajdel, M., Turski, H., Nomoto, K., Siekacz, M., Nowakowski-Szkudlarek, K., Żak, M., Jena, D., Xing, H. G., Perlin, P., Skierbiszewski, C.

“…In this paper, we demonstrate a novel approach utilizing tunnel junction (TJ) to realize GaN-based distributed feedback (DFB) laser diodes (LDs). Thanks to the…”
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Comparative study of semipolar (202¯1), nonpolar (101¯0) and polar (0001) InGaN multi-quantum well structures grown under N- and In-excess by plasma assisted molecular beam epitaxy by Sawicka, M., Wolny, P., Kryśko, M., Turski, H., Szkudlarek, K., Grzanka, S., Skierbiszewski, C.

“…•Semipolar, nonpolar and c-plane MQWs are grown under N- and In-rich excess by PAMBE.•For N-rich growth only semipolar surface is smooth in contrast to m-plane…”
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Low frequency noise in two-dimensional lateral GaN/AlGaN Schottky diodes by Cywiński, G., Szkudlarek, K., Kruszewski, P., Yahniuk, I., Yatsunenko, S., Muzioł, G., Skierbiszewski, C., Knap, W., Rumyantsev, S. L.

“…Schottky diodes with Ni/Au contact to the side of the two dimensional channel in GaN/AlGaN system were fabricated and studied. This kind of lateral…”
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Tunnel junctions for vertically integrated multiple nitrides laser diodes by Siekacz, M., Muziol, G., Turski, H., Nowakowski-Szkudlarek, K., Hajdel, M., Zak, M., Feduniewicz-Zmuda, A., Wolny, P., Mikosza, M., Sawicka, M., Skierbiszewski, C.

“…The tunnel junctions (TJs) in the III-nitrides optoelectronic structures open possibilities for new applications such as vertically integrated multicolor light…”
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Extremely long lifetime of III-nitride laser diodes grown by plasma assisted molecular beam epitaxy by Muziol, G., Siekacz, M., Nowakowski-Szkudlarek, K., Hajdel, M., Smalc-Koziorowska, J., Feduniewicz-Żmuda, A., Grzanka, E., Wolny, P., Turski, H., Wiśniewski, P., Perlin, P., Skierbiszewski, C.

“…In this paper the reliability of III-nitride blue laser diodes grown by plasma-assisted molecular beam epitaxy on low threading dislocation density Ammono-GaN…”
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Electrically controlled wire-channel GaN/AlGaN transistor for terahertz plasma applications by Cywiński, G., Yahniuk, I., Kruszewski, P., Grabowski, M., Nowakowski-Szkudlarek, K., Prystawko, P., Sai, P., Knap, W., Simin, G. S., Rumyantsev, S. L.

“…We report on a design of fin-shaped channel GaN/AlGaN field-effect transistors developed for studying resonant terahertz plasma oscillations. Unlike common two…”
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Influence of Electron Blocking Layer on Properties of InGaN-Based Laser Diodes Grown by Plasma-Assisted Molecular Beam Epitaxy by Hajdel, M., Muziol, G., Nowakowski-Szkudlarek, K., Siekacz, M., Feduniewicz-Żmuda, A., Wolny, P., Skierbiszewski, C.

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Diffractive optics for GaN terahertz detectors arrays by Suszek, J., Sypek, M., Siemion, A., Nowakowska-Siwinska, A., Zagrajek, P., Cywinski, G., Szkudlarek, K., Yahniuk, I., Yatsunenko, S., But, D. B., Coquillat, D., Knap, W.

“…Fabrication and experimental tests of materials and optics for Terahertz range used in field effect transistor detectors arrays are described. The method using…”
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Terahertz imaging by field effect transistors by Knap, W., But, D., Coquillat, D., Dyakonova, N., Teppe, F., Sypek, M., Suszek, J., Cywinski, G., Szkudlarek, K., Yahniuk, I., Yatsunenko, S.

“…An overview of main results concerning THz detection related to plasma nonlinearities in nanometer field effect transistors is presented. In particular…”
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Terahertz detection by AlGaN/GaN HEMTs at high intensity by Dyakonova, N., Coquillat, D., But, D. B., Teppe, F., Knap, W., Faltermeier, P., Olbrich, P., Ganichev, S. D., Szkudlarek, K., Cywinski, G.

“…We report on the photoresponse of AlGaN/GaN HEMT to THz radiation of low and high intensity. We show that the response vs. gate bias dependence can be…”
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Tunnel junctions for two-color nitride light emitting diodes and laser diodes grown by plasma assisted molecular beam epitaxy by Skierbiszewski, C., Turski, H., Zak, M., Nowakowski-Szkudlarek, K., Muziol, G., Siekacz, M., Feduniewicz-Zmuda, A., Sawicka, M.

“…One of the most challenging issues to address in nitride based devices like light emitting diodes (LEDs) and laser diodes (LDs) is poor conductivity of p-type…”
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A1GaN/GaN Field Effect Transistors Based on Lateral Schottky Barrier Gates as Millimeter Wave Detectors by Sai, P., But, D. B., Nowakowski-Szkudlarek, K., Przybytek, J., Prystawko, P., Yahniuk, I., Wisniewski, P., Stonio, B., Slowikowski, M., Rumyantsev, S. L., Knap, W., Cywinski, G.

“…We report on comparison studies between a novel transistor like device and two dimensional Fin Field-Effect transistor towards their applications in a…”
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Terahertz imaging with arrays of plasma field effect transistors detectors by Knap, W., Sypek, M., But, D., Coquillat, D., Suszek, J., Szkudlarek, K., Siemion, A., Cywinski, G., Dyakonova, N., Teppe, F.

“…Recent developments of THz detector arrays based on plasma wave field effect transistors are presented. By simultaneous development of the transistor arrays…”
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Towards resonant THz detector: Devices based on Schottky diodes to 2DEG GaN/AlGaN by Cywinski, G., Sai, P., Yahniuk, I., Kruszewski, P., Grzywacz, B., Przybytek, J., Prystawko, P., Khachapuridze, A., Nowakowski-Szkudlarek, K., Knap, W., Wisniewski, P., Stonio, B., Simin, G. S., Rumyantsev, S. L.

“…We report on comparison studies between a novel transistor-like device and two dimensional Fin Field-effect transistor (2DEG FinFET) towards their applications…”
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Noise limitations of GaN lateral Schottky diodes for THz applications by Cywinski, G., Yahniuk, I., Szkudlarek, K., Kruszewski, P., Muziol, G., Skierbiszewski, C., Khachapuridze, A., Knap, W., But, D., Rumyantsev, S. L.

“…Schottky diodes are key elements of RF and terahertz electronics. The design of the lateral Schottky with the contact directly to the side of the electron 2D…”
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THz imaging and wireless communication using nanotransistor based detectors: From basic physics to first real world applications by Knap, W., Cywinski, G., Sypek, M., Dyakonova, N., Coquillat, D., Szkudlarek, K., Yahniuk, I., Archier, C., Moulin, B., Triki, M., Hella, M. M., Nodjiadjim, V., Riet, M., Konczykowska, A.

“…In this paper, an overview of main results concerning THz detection by nanometer field effect transistors (FETs) and heterojunction based transistors (HBTs) is…”
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