Search Results - "Szentpáli, B."

InP Schottky junctions for zero bias detector diodes by Horváth, Zs.J, Rakovics, V, Szentpáli, B, Püspöki, S, Žd’ánský, K

“…Cr+Au and Ag Schottky diodes were prepared on n-type InP by using HF or Na 2S+HF surface treatment for zero bias microwave detector purposes. The diodes were…”
Get full text

Temperature dependent in situ doping of ALD ZnO by Baji, Zs, Lábadi, Z., Horváth, Z. E., Fried, M., Szentpáli, B., Bársony, I.

“…This study on ALD grown ZnO layers is aimed at the systematic study of the effect of incorporation of different Al contents on the properties of the layers. An…”
Get full text

Point defects generated by direct-wafer bonding of silicon by DOZSA, L, SZENTPALI, B, PASQUARIELLO, D, HJORT, K

“…High-purity float zone (FZ) silicon p- and n-type wafers were directly bonded hydrophobically at 700 degree C and 1050 degree C. Electrical I-V and…”
Get full text

Thermopile antennas for detection of millimeter waves by Szentpáli, B., Basa, P., Fürjes, P., Battistig, G., Bársony, I., Károlyi, G., Berceli, T., Rymanov, V., Stöhr, A.

“…A thermopile structure is proposed for the detection of microwave/millimeter wave radiation. The thermopairs in the suggested linear arrangement function as…”
Get full text

GaAs planar doped barrier diodes by Szentpáli, B., Van Tuyen, Vo, Constantinidis, G., Lagadas, M.

“…The planar doped barrier diodes are majority carrier devices with technologically controlled barrier height. This paper reviews the main current conducting…”
Get full text

Competition of shot noise and hot-electron noise in GaAs planar-doped barrier diode by Gružinskis, V., Liberis, J., Matulionis, A., Sakalas, P., Starikov, E., Shiktorov, P., Szentpáli, B., Van Tuyen, V., Hartnagel, H. L.

“…Microwave noise in GaAs planar-doped barrier diodes is investigated over a wide range of bias. Suppression of shot noise at intermediate densities of current…”
Get full text

Noise Limitations of the Applications of Miniature Thermal Resistors by Szentpali, B.

“…The limitations of the performance of thermal resistors due to the electronic noises are investigated. Two applications of the thermistors are considered: the…”
Get full text

Engineered Schottky barriers on n-In0.35Ga0.65As by HORVATH, Zs. J, VO VAN TUYEN, FRANCHI, S, BOSACCHI, A, FRIGERI, P, GOMBIA, E, MOSCA, R, PAL, D, KALMAR, I, SZENTPALI, B

Get full text

Damage characterisation of InP after reactive ion etching using the low-frequency noise measurement technique by Gottwald, P, Kräutle, H, Szentpáli, B, Kincses, Zs, Hartnagel, H.L

“…Reactive ion etching (RIE) is a basic tool in the processing of InP optoelectronic and photonic integrated circuits (OEICs and PICs). However, due to the…”
Get full text

Thermopile as THz detector by Szentpáli, B, Basa, P, Fürjes, P, Battistig, G, Bársony, I

“…A novel MEMS thermopile structure is presented, in which the thermopairs act as dipole antennas. The induced current heats the hot point of the thermopairs…”
Get full text

A Transient Method for Measuring Current-Voltage Characteristics with Negative Differential Resistance Regions by Dózsa, L., Riesz, F., Karányi, J., Van Tuyen, Vo, Szentpáli, B., Muller, A.

Get full text

A new DLTS method by Szentpáli, B.

Get full text

Metamaterials: a new concept in the microwave technique by Szentpali, B.

“…The history of the metamaterial concept is outlined. The story started with the Institution of Veselago and continued almost thirty years later with the works…”
Get full text

Characterization of GaAs epitaxial layers and diode chips for microwave device purposes by Pődör, B., Mojzes, I., Szentpáli, B.

Get full text

Investigation of the doping level in overcompensated p-GaP layers grown by liquid phase epitaxy by Pfeifer, J., Csontos, L., Szentpáli, B.

Get full text

Comparison of photo- and plasma-assisted passivating process effects on GaAs devices by means of low-frequency noise measurements by Gottwald, P., Riemenschneider, R., Szentpali, B., Hartnagel, H.L., Kincses, Zs, Ruszinko, M.

“…We report on measurement results of temperature-dependent low-frequency noise of VPE-grown ( v apour- p hase e pitaxy) GaAs epitaxial layers, which have been…”
Get full text

Human exposure to electromagnetic fields from mobile phones by Szentpali, B.

“…A mobile phone can emit a few watts of power in the vicinity of the human head. The paper reviews the different types of mobile phones, the related exposures,…”
Get full text

Engineered Schottky barriers on n-In 0.35Ga 0.65As by Horváth, Zs.J., Van Tuyen, Vo, Franchi, S., Bosacchi, A., Frigeri, P., Gombia, E., Mosca, R., Pal, D., Kalmár, I., Szentpáli, B.

“…The Schottky barrier height in Al/n-In 0.35Ga 0.65As was engineered using thin p-type near-interface In 0.35Ga 0.65As layers grown by molecular beam epitaxy…”
Get full text

Conduction mechanisms in porous Si LEDs by Szentpáli, Béla, Mohácsy, Tibor, Bársony, István

“…Diode-like structures were prepared from p- and n-type Si, in which porous Si layers were sandwiched between the crystalline Si and the evaporated Al top…”
Get full text

Quasi-optical THz radar and spectroscopy instrumentation based on nonlinear transmission lines MMICs by Dragoman, M., Muller, A., Iordanescu, S., Craciunoiu, F., Rizescu, R., Simon, S., Szentpali, B., Somogyi, K., Riesz, F., Varga, S.

“…The paper presents the design, modelling and manufacturing of a new type of MMIC, a nonlinear transmission line monolithically integrated in a CPW based on…”
Get full text