Controlling optical beam shifts upon reflection from a magneto-electric liquid-crystal-based system for applications to chemical vapor sensing

Controlling optical beam shifts upon reflection from a magneto-electric liquid-crystal-based system for applications to chemical vapor sensing

We investigate the tunability of the Goos–Hänchen shift experienced by a Gaussian light beam reflected from a multilayered heterostructure consisting of a nematic liquid-crystal cell sandwiched between electrodes and deposited on a magneto-electric/non-magnetic bilayer. Our calculations account for...

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Bibliographic Details
Published in:Applied physics. B, Lasers and optics Vol. 123; no. 4; pp. 1 - 9
Main Authors: Dadoenkova, Yuliya S., Bentivegna, Florian F. L., Svetukhin, Viacheslav V., Zhukov, Andrey V., Petrov, Roman V., Bichurin, Mirza I.
Format: Journal Article
Language:English
Published: Berlin/Heidelberg Springer Berlin Heidelberg 01-04-2017
Springer Nature B.V
Subjects:
Anisotropy
Applied physics
Engineering
Lasers
Nematic crystals
Optical Devices
Optics
Photonics
Physical Chemistry
Physics
Physics and Astronomy
Quantum Optics
Angular Dispersion
Reflection Matrix
Relative Permittivity
Reflection Coefficient
ZnSe Film
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Summary:We investigate the tunability of the Goos–Hänchen shift experienced by a Gaussian light beam reflected from a multilayered heterostructure consisting of a nematic liquid-crystal cell sandwiched between electrodes and deposited on a magneto-electric/non-magnetic bilayer. Our calculations account for the optical anisotropy of the magnetic layer and of the liquid-crystal cell, as well as for the inhomogeneous refractive index distribution in the latter due to the reorientation of its molecules. We show that the Goos–Hänchen shift can be enhanced and controlled via the voltage applied to the liquid crystal cell and the magnetization direction of the magnetic film. We propose to exploit the voltage-induced tunability of the Goos–Hänchen shift in this system to design an optical sensor devoted to the detection of chemical vapors in the vicinity of the structure.
ISSN:0946-2171
1432-0649
DOI:10.1007/s00340-017-6691-1