Search Results - "Svetogorov, V.N."

InGaAs/InGaAsP/InP heterostructures for high-power photodetectors by Bragin, N.N., Svetogorov, V.N., Ryaboshtan, Yu. L., Marmalyuk, A.A., Ivanov, A.V., Ladugin, M.A., Semenov, A.S.

“…A UTC photodetector based on InGaAs/InGaAsP/InP heterostructures grown by MOCVD is demonstrated. A model of the band diagram of the photodetector is proposed…”
Get full text

High-power Semiconductor 1.3-1.6\ \mu \mathrm Laterally-Coupled Distributed Bragg Reflector Laser by Bagaeva, O.O., Danilov, A.I., Ivanov, A.V., Kurnosov, V.D., Kurnosov, K.V., Chernov, R.V., Shishkov, V.V., Kurnyavko, Y.V., Ladugin, M.A., Marmalyuk, A.A., Romantsevich, V.I., Ryaboshtan, Y.L., Svetogorov, V.N., Simakov, V.A

“…The output characteristics of 1.3-1.6\ \mu \mathrm{m} high-power single-frequency DFB-lasers with a laterally coupled Bragg diffraction grating were…”
Get full text

Implementation of energy barrier layers for 1550 nm high-power laser diodes by Veselov, D.A., Pikhtin, N.A., Slipchenko, S.O., Kirichenko, I.K., Podoskin, A.A., Shuvalova, N.V., Rudova, N.A., Vavilova, L.S., Rastegaeva, M.G., Bagaev, T.A., Svetogorov, V.N., Padalitsa, A.A., Ryaboshtan, Yu.L., Ladugin, M.A., Marmalyuk, A.A.

“…The influence of a thin AlInAs energy barrier on the efficiency of 1550 nm high-power semiconductor lasers efficiency has been experimentally studied. It was…”
Get full text

Optimization of the energy barrier layer position in 1550 nm high-power laser diodes by Podoskin, A.A., Veselov, D.A., Bagaev, T.A., Svetogorov, V.N., Yarotskaya, I.V., Zolotarev, V.V., Kruchkov, V.A., Shushkanov, I.V., Ladugin, M.A., Marmalyuk, A.A., Slipchenko, S.O., Pikhtin, N.A.

“…The paper discusses the optimization of AlInAs energy barrier layers position in AlGalnAs/AlInAs/InP laser heterostructures at 1550 nm. For the heterostructure…”
Get full text