Liquid-phase epitaxy of 2H–SiC film on a (0001) 4H–SiC substrate in Li–Si melt

We first applied a liquid-phase epitaxy (LPE) method to the growth of 2H–SiC to obtain an oriented 2H–SiC layer. The LPE growth was performed on a (0001) 4H–SiC substrate in a Li–Si–C melt at 850 °C. A LPE layer grew on the carbon face of the (0001) 4H–SiC substrate with the area of about 1 × 1 mm 2...

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Bibliographic Details
Published in:	Materials letters Vol. 63; no. 8; pp. 649 - 651
Main Authors:	Imade, Mamoru, Ogura, Takashi, Uemura, Masahiro, Kawamura, Fumio, Yoshimura, Masashi, Kitaoka, Yasuo, Sasaki, Takatomo, Mori, Yusuke, Yamazaki, Masanobu, Suwabe, Shigekazu, Nakashima, Shin-ichi
Format:	Journal Article
Language:	English
Published:	Elsevier B.V 31-03-2009
Subjects:	2H–SiC 4H–SiC Crystal growth Epitaxial growth HR-TEM Raman scattering Crystal growth Epitaxial growth Raman scattering 4H–SiC 2H–SiC HR-TEM
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Summary:	We first applied a liquid-phase epitaxy (LPE) method to the growth of 2H–SiC to obtain an oriented 2H–SiC layer. The LPE growth was performed on a (0001) 4H–SiC substrate in a Li–Si–C melt at 850 °C. A LPE layer grew on the carbon face of the (0001) 4H–SiC substrate with the area of about 1 × 1 mm 2. The thickness and morphology of the LPE layer were confirmed by scanning electron microscope (SEM), and the polytype of the LPE layer was determined using a high-resolution transmission electron microscope (HR-TEM) and a Raman spectroscopy. SEM measurements revealed that the thickness of the LPE layer was 50 μm and that this layer developed with a hexagonal shape. HR-TEM observations and Raman spectral analysis showed that 2H–SiC layer grows on 4H–SiC substrate with the relationship of (0001) 2H–SiC (0001) 4H–SiC. In this study, we first succeeded to grow -axis-oriented 2H–SiC films and concluded that the LPE technique is applicable to the growth of oriented 2H–SiC films in the Li–Si melt.
Bibliography:	ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23
ISSN:	0167-577X 1873-4979
DOI:	10.1016/j.matlet.2008.12.009