Search Results - "Suvkhanov, A."

New VDMOS structure with Discontinuous Thick Inter-Body Oxide to reduce gate-to-drain charge by Roig, J, Mouhoubi, S, Gassot, P, Charavel, R, Suvkhanov, A, Moens, P, Bauwens, F, Tack, M

“…A new vertical power MOSFET (VDMOS) structure with a Discontinuous Thick Inter-Body Oxide (DTIBO) is presented and experimentally analyzed in this paper. The…”
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Fine structure of near-band-edge photoluminescence in He+-irradiated GaN grown on SiC by Joshkin, V. A., Parker, C. A., Bedair, S. M., Krasnobaev, L. Y., Cuomo, J. J., Davis, R. F., Suvkhanov, A.

“…The effect of He ion implantation on the optical properties of epitaxial GaN-on-SiC was studied. We observed that He+ irradiation increases the relative…”
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Influence of oxygen background pressure on crystalline quality of SrTiO3 films grown on MgO by pulsed laser deposition by Kalyanaraman, R., Vispute, R. D., Oktyabrsky, S., Dovidenko, K., Jagannadham, K., Narayan, J., Budai, J. D., Parikh, N., Suvkhanov, A.

“…We have systematically investigated the effect of oxygen partial pressure (PO2) on the crystalline quality of SrTiO3 films grown on MgO (001) substrates using…”
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Ion implantation of epitaxial GaN films: damage, doping and activation by Parikh, Nalin, Suvkhanov, Agajan, Lioubtchenko, Mike, Carlson, Eric, Bremser, Michael, Bray, David, Davis, Robert, Hunn, John

“…Monocrystalline GaN films grown on AlN buffer layers previously deposited on 6HSiC(0001) wafers and having dislocation densities on the order of 10 7 cm/cm 3…”
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Radiation Characteristics of a 0.11μm Modified Commercial CMOS Process by Poivey, C., Hak Kim, Berg, M.D., Forney, J., Seidleck, C., Vilchis, M.A., Phan, A., Irwin, T., LaBel, K.A., Saigusa, R.K., Mirabedini, M.R., Finlinson, R., Suvkhanov, A., Hornback, V., Jun Song, Tung, J.

“…The authors present radiation data, total ionizing dose and single event effects, on the LSI logic 0.11 μm commercial process and two modified versions of this…”
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X-ray and secondary ion mass spectrometry investigation of activation behavior of self-preamorphized silicon substrate by Suvkhanov, Agajan, Mirabedini, Mohammad, Hornback, Verne, Chen, Zhihao

“…The junctions for p-type source/drain and extensions for sub-100 nm technology nodes can be formed by using low energy beamline implantation, plasma doping, or…”
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Investigation of indium activation by SRP and SIMS for sub-0.1 μm retrograde channels by Suvkhanov, A., Mirabedini, M., Hornback, V.

“…SRP, SIMS and C-V measurements of implanted Si wafers were carried out in this study to examine the effect of annealing conditions on the activation of…”
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