Search Results - "Surawanitkun, C."

Switching Performance Comparison With Low Switching Energy Due to Initial Temperature Increment in CoFeB/MgO-Based Single and Double Barriers by Teso, B., Siritaratiwat, A., Kaewrawang, A., Kruesubthaworn, A., Namvong, A., Sainon, S., Surawanitkun, C.

“…Spin-transfer torque magnetic random-access memory (STT-MRAM) based on a single-barrier magnetic tunnel junction (SBMTJ) and a double-barrier magnetic tunnel…”
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Modeling of switching energy of magnetic tunnel junction devices with tilted magnetization by Surawanitkun, C., Kaewrawang, A., Siritaratiwat, A., Kruesubthaworn, A., Sivaratana, R., Jutong, N., Mewes, C.K.A., Mewes, T.

“…For spin transfer torque (STT), the switching energy and thermal stability of magnetic tunnel junctions (MTJ) bits utilized in memory devices are important…”
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Instability of storage and temperature increment in nanopillars due to human body model electrostatic discharge by Surawanitkun, C., Kaewrawang, A., Imtawil, V., Mewes, C.K.A., Mewes, T., Siritaratiwat, A.

“…MRAM relevant to current induced magnetization switching (CIMS) is studied due to thermal increment caused by CIMS. In this paper, the instability of storage…”
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Temperature dependence of magnetic properties on switching energy in magnetic tunnel junction devices with tilted magnetization by Teso, B., Kravenkit, S., Sorn-in, K., Kaewrawang, A., Kruesubthaworn, A., Siritaratiwat, A., Mewes, T., Mewes, C.K.A., Surawanitkun, C.

“…•This study focuses on the magnetic properties of MTJ based STT-MRAM.•Initial temperature increment in the device influences to the magnetic…”
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Magnetic Instability in Tunneling Magnetoresistive Heads Due to Temperature Increase During Electrostatic Discharge by Surawanitkun, C., Kaewrawang, A., Siritaratiwat, A., Kruesubthaworn, A., Sivaratana, R., Jutong, N., Mewes, C. K. A., Mewes, T.

“…Recently, there has been a growing interest in the effects of electrostatic discharge (ESD) failure on tunneling magnetoresistive (TMR) recording heads because…”
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