Search Results - "Sungbong Park"
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1
Identification of False Rotor Fault Indications Produced by Online MCSA for Medium-Voltage Induction Machines
Published in IEEE transactions on industry applications (01-01-2016)“…Motor current signature analysis (MCSA) has become an essential part of the preventive maintenance program for monitoring the condition of the rotor cage in…”
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Journal Article -
2
Reliable Detection of Rotor Faults Under the Influence of Low-Frequency Load Torque Oscillations for Applications With Speed Reduction Couplings
Published in IEEE transactions on industry applications (01-03-2016)“…Low-frequency torque oscillations in the load can induce frequency components in the vicinity of that of rotor faults (RFs) resulting in false alarms when…”
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3
Enhanced direct bandgap emission in germanium by micromechanical strain engineering
Published in Optics express (31-08-2009)“…We propose a new class of optoelectronic devices in which the optical properties of the active material is enhanced by strain generated from micromechanical…”
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4
Monolithic Integration of Silicon-, Germanium-, and Silica-Based Optical Devices for Telecommunications Applications
Published in IEEE journal of selected topics in quantum electronics (01-05-2011)“…This paper presents our recent progress with the integration of silicon (Si) photonic devices for optical telecommunications. To integrate Si wire waveguides,…”
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5
New tunneling source follower with low 1/f noise and high voltage gain
Published in Scientific reports (09-10-2024)“…We have designed a tunneling source follower (TSF) for image sensors that achieves high voltage gain ( A v ) and low 1/ f noise simultaneously. The TSF is…”
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Journal Article -
6
Si Photonics and Fiber to the Home
Published in Proceedings of the IEEE (01-07-2009)“…This paper describes Si photonics and the key application to fiber-to-the-home (FTTH). Mass production in terms of complementary metal-oxide-semiconductor…”
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7
Monolithic integration and synchronous operation of germanium photodetectors and silicon variable optical attenuators
Published in Optics express (12-04-2010)“…We demonstrate the monolithic integration of germanium (Ge) p-i-n photodetector (PDs) with silicon (Si) variable optical attenuator (VOAs) based on…”
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Influence of carrier lifetime on performance of silicon p-i-n variable optical attenuators fabricated on submicrometer rib waveguides
Published in Optics express (24-05-2010)“…We investigated influence of carrier lifetime on performance of silicon (Si) p-i-n variable optical attenuators (VOAs) on submicrometer Si rib waveguides. VOAs…”
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All-silicon and in-line integration of variable optical attenuators and photodetectors based on submicrometer rib waveguides
Published in Optics express (19-07-2010)“…We demonstrate a monolithic integration of variable optical attenuators (VOAs) and photodetectors (PDs) based on submicrometer silicon (Si) rib waveguide with…”
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10
Reverse current reduction of Ge photodiodes on Si without post-growth annealing
Published in Chinese optics letters (10-04-2009)Get full text
Journal Article -
11
Strain and Absorption Coefficient of Finite Ge Structures on Si
Published in Japanese Journal of Applied Physics (01-06-2009)Get full text
Journal Article -
12
Combustion synthesis of Eu2+-activated BaMgAl10O17 phosphor
Published in Journal of materials science. Materials in electronics (01-04-2003)“…The combustion synthesis of a Eu^sup 2+^-doped BaMgAl^sub 10^O^sub 17^ phosphor was performed using urea and carbohydrazide (CH) as combustion fuel. The…”
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Journal Article -
13
Monolithic integration of germanium photodetectors and silicon wire waveguides with carrier injection structures
Published in 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum electronics and Laser Science Conference (01-05-2009)“…We integrated monolithically vertical p-i-n Ge photodetectors with variable optical attenuators (VOAs) based on Si wire rib waveguides with a carrier injection…”
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Conference Proceeding -
14
Starting current analysis for condition monitoring of medium voltage induction motors in the steel industry
Published in 2017 IEEE Industry Applications Society Annual Meeting (01-10-2017)“…Failure of medium voltage (MV) induction motors is a major concern in the steel industry considering that it can cause an unplanned outage of the process…”
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Conference Proceeding -
15
Identification of false rotor fault indications produced by on-line MCSA for medium voltage induction machines
Published in 2015 61st IEEE Pulp and Paper Industry Conference (PPIC) (01-06-2015)“…Motor current signature analysis (MCSA) has become an essential part of the preventive maintenance program for monitoring the condition of the rotor cage in…”
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Conference Proceeding Journal Article -
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7.9 1/2.74-inch 32Mpixel-Prototype CMOS Image Sensor with 0.64μ m Unit Pixels Separated by Full-Depth Deep-Trench Isolation
Published in 2021 IEEE International Solid- State Circuits Conference (ISSCC) (13-02-2021)“…For years, there has been a strong drive for sub-micron pixel development, in spite of reaching the visible light diffraction limit, because a smaller pixel…”
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Conference Proceeding -
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As-grown Ge pin photodiodes on Si with low dark current achieved by hydrogen desorption technique
Published in 7th IEEE International Conference on Group IV Photonics (01-09-2010)“…As-grown Ge pin photodiodes on Si with a low dark current (4.6 × 10 - 2 A/cm 2 at -1 V) are achieved using a hydrogen desorption technique. This technique…”
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Conference Proceeding -
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6.10 A 1/1.56-inch 50Mpixel CMOS Image Sensor with 0.5μm pitch Quad Photodiode Separated by Front Deep Trench Isolation
Published in 2024 IEEE International Solid-State Circuits Conference (ISSCC) (18-02-2024)“…CMOS image sensors (CISs) in high-end mobile devices require wide dynamic range and superior image quality under extremely low light conditions [1]. To…”
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Conference Proceeding -
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Si Photonics and Fiber to the Home: Silicon Photonics
Published in Proceedings of the IEEE (2009)Get full text
Journal Article -
20
Low-dark-current pin photodiodes using as-grown Ge with an i-Si insertion layer: Mechanism of dark current suppression
Published in 2009 6th IEEE International Conference on Group IV Photonics (01-09-2009)“…Low dark current of ~10 mA/cm 2 by inserting i-Si in as-grown Ge pin photodiodes is dominated by the carrier generation in wider-gap i-Si. This property is…”
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Conference Proceeding