Search Results - "Sung, Hyunju"

A Novel Multifin Dynamic Random Access Memory Periphery Transistor Technology Using a Spacer Patterning through Gate Polycrystalline Silicon Technique by Yoshida, Makoto, Kim, Keunnam, Kahng, Jaerok, Lee, Chul, Sung, Hyunju, Jung, Kyoung-Ho, Moon, Joon-Seok, Yang, Wouns, Oh, Kyung-Seok

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Three Series-Connected Transistor Model for a Recess-Channel-Array Transistor and Improvement of Electrical Characteristics by a Bottom Fin Structure by Yoshida, Makoto, Kahng, Jae-Rok, Moon, Joon-Seok, Jung, Kyoung-Ho, Kim, Keunnam, Sung, Hyunju, Lee, Chul, Kim, Chang-Kyu, Yang, Wouns, Jin, Gyoyoung, Oh, Kyung-Seok

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Recessed Channel Fin Field-Effect Transistor Cell Technology for Future-Generation Dynamic Random Access Memories by Yoshida, Makoto, Kahng, Jae-Rok, Moon, Joon-Seok, Jung, Kyoung-Ho, Kim, Keunnam, Sung, Hyunju, Lee, Chul, Kim, Chang-Kyu, Yang, Wouns, Park, Donggun

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A Full FinFET DRAM Core Integration Technology Using a Simple Selective Fin Formation Technique by Yoshida, M., Kahng, J., Lee, C., Jang, S.-M., Sung, H., Kim, K., Kim, H.-J., Jung, K.-H., Yang, W., Park, D., Ryu, B.-I.

“…A full FinFET DRAM core which consists of McFETs for both the sense amplifiers and the sub-word drivers, as well as FinFETs for the memory cell array has been…”
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