Search Results - "Sunderland, D.A."

Optimizing N-p-n and P-n-p heterojunction bipolar transistors for speed by Sunderland, D.A., Dapkus, P.D.

“…The comparative optimization of N-p-n and P-n-p Al-GaAs/GaAs heterojunction bipolar transistors for high speed in both microwave and switching applications is…”
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Qualification issues and pitfalls for advanced semiconductor devices in space by Sunderland, D.A.

“…Increasing satellite performance within size, weight and power constraints demands access to advanced semiconductors, yet environmental, reliability and…”
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Correlation of Prediction to On-Orbit SEU Performance for a Commercial 0.25- \mum CMOS SRAM by Hansen, D.L., Jobe, K., Whittington, J., Shoga, M., Sunderland, D.A.

“…Boeing Satellite Development Center (SDC) geomoblie satellites have experienced a number of very large solar flares during their operational life. Comparison…”
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Correlation of Prediction to On-Orbit SEU Performance for a Commercial 0.25-[mu]m CMOS SRAM by Hansen, D.L, Jobe, K, Whittington, J, Shoga, M, Sunderland, D.A

“…Boeing Satellite Development Center (SDC) geomoblie satellites have experienced a number of very large solar flares during their operational life. Comparison…”
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Megagate ASICs for the Thuraya satellite digital signal processor by Sunderland, D.A., Duncan, G.L., Rasmussen, B.J., Nichols, H.E., Kain, D.T., Lee, L.C., Clebowicz, B.A., Hollis, R.W., Wissel, L., Wilder, T.

“…Boeing Satellite Systems and IBM have designed and fabricated a, set of ASIC chip types to perform computation-intensive digital signal processing (DSP)…”
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Designing electronic systems for space by Sunderland, D.A., Lerma, J., McKay, A.L.

“…This tutorial presents the unique issues that must be considered when designing electronics for space applications (including, but not limited to, radiation…”
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A scaleable, statistical SPICE Gummel-Poon model for SiGe HBTs by Walter, K.M., Ebersman, B., Sunderland, D.A., Berg, G.D., Freeman, G.G., Groves, R.A., Jadus, D.K., Harame, D.L.

“…A scaleable, statistical model has been developed for silicon germanium heterojunction transistors (SiGe HBTs), which are components of a commercially…”
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Manufacturability and applications of SiGe HBT technology by Sunderland, D.A., Ahlgren, D.C., Gilbert, M.M., Jeng, S.-J., Malinowski, J.C., Nguyen-Ngoc, D., Schonenberg, K.T., Stein, K.J., Meyerson, B.S., Harame, D.L.

“…This article reviews the status of IBM's SiGe HBT technology, with a focus on manufacturability issues and circuit applications. Device design and process…”
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CMOS/SOS frequency synthesizer LSI circuit for spread spectrum communications by Sunderland, D.A., Strauch, R.A., Wharfield, S.S., Peterson, H.T., Cole, C.R.

“…Using a 3.5-/spl mu/m gate length complementary metal-oxide-semiconductor/silicon-on-sapphire technology, a single-chip, radiation-hardened, direct digital…”
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A manufacturable poly-emitter graded-SiGe HBT technology for wireless and mixed-signal applications by Nguyen-Ngoc, D., Sunderland, D.A., Ahlgren, D.C., Jeng, S.J., Gilbert, M.M., Malinowski, J.C., Schonenberg, K.T., Stein, K.S., Meyerson, B.S., Harame, D.L.

“…Graded SiGe-base heterojunction transistors (HBTs) offer the advantages of bandgap engineering while maintaining the cost and manufacturing benefits of the…”
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IIIA-8 the effect of structural enhancements on the relative performance of n-p-n and p-n-p heterojunction bipolar transistors by Sunderland, D.A., Dapkus, P.D.

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A scalable, statistical SPICE Gummel-Poon model for SiGe HBTs by Walter, K.M., Ebersman, B., Sunderland, D.A., Berg, G.D., Freeman, G.G., Groves, R.A., Jadus, D.K., Harame, D.L.

“…A scaleable, statistical model has been developed for SiGe HBTs. SPICE Gummel-Poon model parameters are scaled, and statistics added, using language features…”
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The performance potential of p-n-p heterojunction bipolar transistors by Sunderland, D.A., Dapkus, P.D.

“…The performance of P-n-p AlGaAs/GaAs heterojunction microwave and switching transistors is compared to that of N-p-n structures. The maximum frequency of…”
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Acceleration parameters and reliability of SiGe HBTs during long-term forward-biased operation by Rosenthal, P.A., Paine, B.M., Kubota, N.T., Sunderland, D.A.

“…We have conducted accelerated lifetesting on discrete HBTs fabricated with the IBM SiGe5HP HBT technology, and determined the dependence of the wear-out on…”
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Gate-assisted lateral PNP active load for analog SiGe HBT technology by Sunderland, D.A., Schonenberg, K.T., Stein, K.J., Meyerson, B.S., Harame, D.L., Jeng, S.-J., Nguyen-Ngoc, D., Martin, B., Eld, E.C., Tewksbury, T., Ahlgren, D.C., Gilbert, M.M., Malinowski, J.C.

“…This work presents the development of a gate-assisted lateral PNP as a high transconductance active load device for analog SiGe HBT technology. We discuss…”
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A fully planar p-n-p heterojunction bipolar transistor by Sunderland, D.A., Haden, J.M., Dzurko, K.M., Stanchina, W.E., Lee, W.-C., Danner, A.D., Dapkus, P.D.

“…The fabrication of fully planar p-i-n heterojunction bipolar transistors is reported. The devices were constructed using ion implantation into AlGaAs/GaAs…”
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SiGe HBT Technology for High Speed Integrated Circuits by Sunderland, D.A., AhIgren, D.C., Gilbert, M.M., Jeng, S.-J., Malinowski, J.C., Nguyen-Ngoc, D., Schonenberg, K.T., Stein, K.J., Soyuer, M., Meyerson, B.S., Harame, D.L.

“…The graded-SiGe-base heterojunction bipolar transistor (SiGe HBT) offers three main advantages over conventional silicon bipolar junction transistors [1]: 1 )…”
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A 200 mm SiGe-HBT BiCMOS technology for mixed signal applications by Nguyen-Ngoc, D., Harame, D.L., Malinowski, J.C., Jeng, S.J., Schonenberg, K.T., Gilbert, M.M., Berg, G.D., Wu, S., Soyuer, M., Tallman, K.A., Stein, K.J., Groves, R.A., Subbanna, S., Colavito, D.B., Sunderland, D.A., Meyerson, B.S.

“…A BiCMOS technology including 0.25 /spl mu/m electrical channel length (L/sub EFF/) nFET and pFET CMOS devices and 60 GHz f/sub max/ SiGe-HBT transistors has…”
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