Search Results - "Sunakawa, Haruo"

Growth and strain characterization of high quality GaN crystal by HVPE by Geng, Huiyuan, Sunakawa, Haruo, Sumi, Norihiko, Yamamoto, Kazutomi, Atsushi Yamaguchi, A., Usui, Akira

“…Freestanding GaN crystals were fabricated by hydride vapor phase epitaxy using a random-islands facet-initiated epitaxial overgrowth technique. In this method,…”
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Transmission electron microscopy of defects in GaN films formed by epitaxial lateral overgrowth by Sakai, Akira, Sunakawa, Haruo, Usui, Akira

“…We have investigated by transmission electron microscopy (TEM) defect morphology and structure in GaN films formed using an epitaxial lateral overgrowth (ELO)…”
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Preparation of Freestanding GaN Wafers by Hydride Vapor Phase Epitaxy with Void-Assisted Separation by Oshima, Yuichi, Eri, Takeshi, Shibata, Masatomo, Sunakawa, Haruo, Kobayashi, Kenji, Ichihashi, Toshinari, Usui, Akira

“…Authors developed a novel technique for preparing large-scale freestanding GaN wafers. Hydride VPE (HVPE) growth of thick GaN layer was performed on a GaN…”
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Thick GaN epitaxial growth with low dislocation density by hydride vapor phase epitaxy by USUI, A, SUNAKAWA, H, SAKAI, A, YAMAGUCHI, A. A

“…Thick GaN layers were grown by hydride vapor phase epitaxy (HVPE) with the aim of using these layers as a homoepitaxial substrate to improve device quality of…”
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Fabrication of freestanding m-plane GaN wafer by using the HVPE technique on an aluminum carbide buffer layer on an m-plane sapphire substrate by Sasaki, Hitoshi, Sunakawa, Haruo, Sumi, Norihiko, Yamamoto, Kazutomi, Usui, Akira

“…A freestanding m-plane GaN wafer is fabricated by using the hydride vapor-phase epitaxy (HVPE) technique on an aluminum carbide buffer layer on an m-plane…”
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Effect of aluminum carbide buffer layer on growth and self-separation of m -plane GaN by hydride vapor phase epitaxy by Sasaki, Hitoshi, Sunakawa, Haruo, Sumi, Norihiko, Yamamoto, Kazutomi, Usui, Akira

“…An m ‐plane GaN layer with a thickness of approximately 500 μm was successfully obtained on a conventional m ‐plane sapphire substrate with a diameter of 2…”
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Residual Strain Evaluation by Cross-Sectional Micro-Reflectance Spectroscopy of Freestanding GaN Grown by Hydride Vapor Phase Epitaxy by Geng, Huiyuan, Yamaguchi, A Atsushi, Sunakawa, Haruo, Sumi, Norihiko, Yamamoto, Kazutomi, Usui, Akira

“…Distributions of residual stresses in the cross-section of as-grown $c$-plane freestanding GaN substrates grown by hydride vapor phase epitaxy (HVPE) were…”
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Residual Strain Evaluation by Cross-Sectional Micro-Reflectance Spectroscopy of Freestanding GaN Grown by Hydride Vapor Phase Epitaxy by Geng, Huiyuan, Yamaguchi, A Atsushi, Sunakawa, Haruo, Sumi, Norihiko, Yamamoto, Kazutomi, Usui, Akira

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Self-organized propagation of dislocations in GaN films during epitaxial lateral overgrowth by Sakai, Akira, Sunakawa, Haruo, Kimura, Akitaka, Usui, Akira

“…Dislocation propagation and defect evolution in GaN films formed by epitaxial lateral overgrowth (ELO) are examined by transmission electron microscopy. A…”
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High-speed ablation etching of GaN semiconductor using femtosecond laser by Ozono, Kazue, Obara, Minoru, Usui, Akira, Sunakawa, Haruo

“…Using intense femtosecond laser (150 fs, 790 nm, 1 kpps), precise and high-speed laser ablation etching of hexagonal GaN is demonstrated. Etch rate above the…”
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Room-Temperature Continuous-Wave Operation of InGaN Multi-Quantum-Well Laser Diodes Grown on an n-GaN Substrate with a Backside n-Contact by Kuramoto, Masaru, Sasaoka, Chiaki, Hisanaga, Yukihiro, Kimura, Akitaka, Yamaguchi, A. Atsushi, Sunakawa, Haruo, Kuroda, Naotaka, Nido, Masaaki, Usui, Akira, Mizuta, Masashi

“…Continuous-wave operation at room-temperature has been demonstrated for InGaN multi-quantum-well (MQW) laser diodes (LDs) grown on low-dislocation-density…”
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Scanning reflection electron microscopy study of surface defects in GaN films formed by epitaxial lateral overgrowth by Watanabe, Heiji, Kuroda, Naotaka, Sunakawa, Haruo, Usui, Akira

“…We have used scanning reflection electron microscopy (SREM) to detect surface defects in GaN films formed by facet-initiated epitaxial lateral overgrowth. SREM…”
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X-Ray Rocking Curve Determination of Twist and Tilt Angles in GaN Films Grown by an Epitaxial-Lateral-Overgrowth Technique by Kobayashi, Kenji, Yamaguchi, A. Atsushi, Kimura, Shigeru, Sunakawa, Haruo, Kimura, Akitaka, Usui, Akira

“…X-ray rocking curve measurements have been carried out in order to investigate the twisting and tilting in hydride vapor phase epitaxy (HVPE) and metalorganic…”
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GaAs atomic layer epitaxy by hydride VPE by USUI, A, SUNAKAWA, H

“…GaAs atomic layer epitaxy is demonstrated in hydride vapor phase epitaxy by a dual-grown-chamber method. GaAs substrate is alternatively exposed to GaCl and As…”
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Defect structure in selectively grown GaN films with low threading dislocation density by Sakai, Akira, Sunakawa, Haruo, Usui, Akira

“…We have characterized by transmission electron microscopy (TEM) defect structures in GaN films grown selectively in hydride vapor-phase epitaxy (HVPE). In this…”
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Growth of InN by chloride-transport vapor phase epitaxy by SUNAKAWA, H, YAMAGUCHI, A. A, KIMURA, A, USUI, A

“…Hexagonal single crystalline InN film are grown on a hexagonal-GaN epitaxial layer in a GaAs(100) substrates by chloride-transport vapor phase epitaxy. It is…”
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Single domain hexagonal GaN films on GaAs (100) vicinal substrates grown by hydride vapor phase epitaxy by YAMAGUCHI, A. A, MANAKO, T, SAKAI, A, SUNAKAWA, H, KIMURA, A, NIDO, M, USUI, A

“…Hexagonal GaN ( h -GaN) films are grown on GaAs (100) vicinal substrates by hydride vapor phase epitaxy. The substrate misorientation dependence of the crystal…”
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InGaP/GaAs single quantum well structure growth on GaAs facet walls by chloride atomic layer epitaxy by Usui, Akira, Sunakawa, Haruo, Stützler, Frank J., Ishida, Koichi

“…InGaP/GaAs single quantum well(SQW) structure growth on GaAs facet wall is achieved by atomic layer epitaxy (ALE) using chloride source gases, such as InCl and…”
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Fabrication of freestanding @@im@-plane GaN wafer by using the HVPE technique on an aluminum carbide buffer layer on an @@im@-plane sapphire substrate by Sasaki, Hitoshi, Sunakawa, Haruo, Sumi, Norihiko, Yamamoto, Kazutomi, Usui, Akira

“…A freestanding @@im@-plane GaN wafer is fabricated by using the hydride vapor-phase epitaxy (HVPE) technique on an aluminum carbide buffer layer on an…”
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Surface morphology study for hexagonal GaN grown on GaAs(100) substrates by hydride vapor phase epitaxy by KIMURA, A, YAMAGUCHI, A. A, SAKAI, A, SUNAKAWA, H, NIDO, M, USUI, A

“…The surface morphology of hexagonal ( h -) GaN layers grown by hydride vapor phase epitaxy on GaAs (100) substrates with several misorientation angles and…”
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