Search Results - "Sun, Shichuang"

Studies on High-Voltage GaN-on-Si MIS-HEMTs Using LPCVD Si3N4 as Gate Dielectric and Passivation Layer by Zhang, Zhili, Yu, Guohao, Zhang, Xiaodong, Deng, Xuguang, Li, Shuiming, Fan, Yaming, Sun, Shichuang, Song, Liang, Tan, Shuxin, Wu, Dongdong, Li, Weiyi, Huang, Wei, Fu, Kai, Cai, Yong, Sun, Qian, Zhang, Baoshun

“…This paper investigates the performance of AlGaN/gallium nitride (GaN) MIS high electron mobility transistors (MIS-HEMTs). The gate dielectric layer and the…”
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Normally-off p-GaN/AlGaN/GaN high electron mobility transistors using hydrogen plasma treatment by Hao, Ronghui, Fu, Kai, Yu, Guohao, Li, Weiyi, Yuan, Jie, Song, Liang, Zhang, Zhili, Sun, Shichuang, Li, Xiajun, Cai, Yong, Zhang, Xinping, Zhang, Baoshun

“…In this letter, we report a method by introducing hydrogen plasma treatment to realize normally-off p-GaN/AlGaN/GaN HEMT devices. Instead of using etching…”
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Normally Off AlGaN/GaN MIS-High-Electron Mobility Transistors Fabricated by Using Low Pressure Chemical Vapor Deposition Si3N4 Gate Dielectric and Standard Fluorine Ion Implantation by Zhang, Zhili, Fu, Kai, Deng, Xuguang, Zhang, Xiaodong, Fan, Yaming, Sun, Shichuang, Song, Liang, Xing, Zheng, Huang, Wei, Yu, Guohao, Cai, Yong, Zhang, Baoshun

“…This letter presents a fabrication technology of enhancement-mode (E-mode) AlGaN/GaN metal-insulator- semiconductor high-electron mobility transistors…”
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High-resistivity unintentionally carbon-doped GaN layers with nitrogen as nucleation layer carrier gas grown by metal-organic chemical vapor deposition by Chen, Fu, Sun, Shichuang, Deng, Xuguang, Fu, Kai, Yu, Guohao, Song, Liang, Hao, Ronghui, Fan, Yaming, Cai, Yong, Zhang, Baoshun

“…In this letter, high-resistivity unintentionally carbon-doped GaN layers with sheet resistivity greater than 106 Ω/□ have been grown on c-plane sapphire…”
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AlGaN/GaN MIS-HEMTs of Very-Low }} Hysteresis and Current Collapse With In-Situ Pre-Deposition Plasma Nitridation and LPCVD-Si3N4 Gate Insulator by Zhang, Zhili, Li, Weiyi, Fu, Kai, Yu, Guohao, Zhang, Xiaodong, Zhao, Yanfei, Sun, Shichuang, Song, Liang, Deng, Xuguang, Xing, Zheng, Yang, Lei, Ji, Rongkun, Zeng, Chunhong, Fan, Yaming, Dong, Zhihua, Cai, Yong, Zhang, Bao Shun

“…In this letter, we report an in-situ predeposition plasma nitridation process, which is adopted to remove the GaN surface oxygen-related bonds and reduce…”
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Interface Si donor control to improve dynamic performance of AlGaN/GaN MIS-HEMTs by Song, Liang, Fu, Kai, Zhang, Zhili, Sun, Shichuang, Li, Weiyi, Yu, Guohao, Hao, Ronghui, Fan, Yaming, Shi, Wenhua, Cai, Yong, Zhang, Baoshun

“…In this letter, we have studied the performance of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) with different…”
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Effect of quenching temperature on microstructure and mechanical properties of Mg-35 wt%Sc alloy by Xu, Chen, Wang, Jianfeng, Liu, Shanshan, Wang, Zhong, Ru, Kenan, Sun, Shichuang, Sun, Yufeng

“…In this work, the microstructure, microhardness and compressive mechanical properties of quenched Mg-35 wt%Sc alloy at 540 °С, 600 °С, and 630 °С were…”
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Electro-oxidative preparation of ultrathin conjugated microporous polymer film for enhanced nitroaromatics detection by Zhou, Wanshuang, Yu, Cong, Wang, Yu, Ma, Pengcheng, Qin, Xin, Sun, Shichuang, Cui, Zhaojie, Luo, Shuangjiang, Wang, Xinbo

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Improved Optical Performance of InAs Quantum Dot Structure via Suitable Manipulation of GaAs Cap Layer Growth by Qi, Zhiqiang, Li, Senlin, Sun, Shichuang, Zhang, Wei, Ye, Wei, Fang, Yanyan, Dai, Jiangnan, Chen, Changqing

“…The influences of the different growth methods of GaAs cap layer on the self-assembled InAs quantum dots were investigated via photoluminescence and…”
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Mechanism of leakage of ion-implantation isolated AlGaN/GaN MIS-high electron mobility transistors on Si substrate by Zhang, Zhili, Song, Liang, Li, Weiyi, Fu, Kai, Yu, Guohao, Zhang, Xiaodong, Fan, Yaming, Deng, Xuguang, Li, Shuiming, Sun, Shichuang, Li, Xiajun, Yuan, Jie, Sun, Qian, Dong, Zhihua, Cai, Yong, Zhang, Baoshun

“…In this paper, we systematically investigated the leakage mechanism of the ion-implantation isolated AlGaN/GaN metal-insulator-semiconductor high electron…”
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AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with reduced leakage current and enhanced breakdown voltage using aluminum ion implantation by Sun, Shichuang, Fu, Kai, Yu, Guohao, Zhang, Zhili, Song, Liang, Deng, Xuguang, Qi, Zhiqiang, Li, Shuiming, Sun, Qian, Cai, Yong, Dai, Jiangnan, Chen, Changqing, Zhang, Baoshun

“…This letter has studied the performance of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon substrate with GaN buffer…”
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Normally Off AlGaN/GaN MIS-High-Electron Mobility Transistors Fabricated by Using Low Pressure Chemical Vapor Deposition Si sub(3)N sub(4) Gate Dielectric and Standard Fluorine Ion Implantation by Zhang, Zhili, Fu, Kai, Deng, Xuguang, Zhang, Xiaodong, Fan, Yaming, Sun, Shichuang, Song, Liang, Xing, Zheng, Huang, Wei, Yu, Guohao, Cai, Yong, Zhang, Baoshun

“…This letter presents a fabrication technology of enhancement-mode (E-mode) AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistors…”
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Studies on High-Voltage GaN-on-Si MIS-HEMTs Using LPCVD Si sub(3)N sub(4) as Gate Dielectric and Passivation Layer by Zhang, Zhili, Yu, Guohao, Zhang, Xiaodong, Deng, Xuguang, Li, Shuiming, Fan, Yaming, Sun, Shichuang, Song, Liang, Tan, Shuxin, Wu, Dongdong, Li, Weiyi, Huang, Wei, Fu, Kai, Cai, Yong, Sun, Qian, Zhang, Baoshun

“…This paper investigates the performance of AlGaN/gallium nitride (GaN) MIS high electron mobility transistors (MIS-HEMTs). The gate dielectric layer and the…”
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Studies on High-Voltage GaN-on-Si MIS-HEMTs Using LPCVD Si 3 N 4 as Gate Dielectric and Passivation Layer by Zhang, Zhili, Yu, Guohao, Zhang, Xiaodong, Deng, Xuguang, Li, Shuiming, Fan, Yaming, Sun, Shichuang, Song, Liang, Tan, Shuxin, Wu, Dongdong, Li, Weiyi, Huang, Wei, Fu, Kai, Cai, Yong, Sun, Qian, Zhang, Baoshun

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Optical performance improvement of GaN/AlN quantum dots via a two-step grown caplayer by Qi, Zhiqiang, Li, Senlin, Sun, Shichuang, Huang, Xuhua, Li, Yang, Zhang, Wei, Ye, Wei, Dai, Jiangnan, Tian, Yu, Fang, Yanyan, Chen, Changqing

“…A two-step growth technique consisting of a low temperature pulsed atomic layer epitaxy (PALE) method and high temperature PALE method has been employed to…”
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InAs/GaAs quantum dots with wide-range tunable densities by simply varying V/III ratio using metal-organic chemical vapor deposition by Li, Senlin, Chen, Qingqing, Sun, Shichuang, Li, Yulian, Zhu, Qiangzhong, Li, Juntao, Wang, Xuehua, Han, Junbo, Zhang, Junpei, Chen, Changqing, Fang, Yanyan

“…The complicated behaviors of InAs/GaAs quantum dots with increasing V/III ratio associated with several competing mechanisms have been described. The results…”
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Influence of high-temperature postgrowth annealing under different ambience on GaN quantum dots grown via Ga droplet epitaxy by Qi, Zhiqiang, Li, Senlin, Huang, Xuhua, Sun, Shichuang, Zhang, Wei, Ye, Wei, Dai, Jiangnan, Wu, Zhihao, Chen, Changqing, Tian, Yu, Fang, Yanyan

“…The influence of high-temperature postgrowth annealing (PGA) under NH sub(3)/H sub(2), NH sub(3)/N sub(2) ambience on the morphologies and nitridation degree…”
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Optical properties of the nonpolar a-plane MgZnO films grown on a-GaN/r-sapphire templates by pulsed laser deposition by Zhang, Jun, Tian, Wu, Wu, Feng, Sun, Shichuang, Wang, Shuai, Dai, Jiangnan, Fang, Yanyan, Wu, Zhihao, Chen, Changqing, Tai, Jiali, Li, Mingkai, He, Yunbin

“…Nonpolar (1120) a-plane MgZnO films were grown on different a-GaN/r-sapphire templates by pulsed laser deposition (PLD), where the growth temperature of GaN…”
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