Search Results - "Sumakeris, J. J."

Lifetime-limiting defects in n − 4H-SiC epilayers by Klein, P. B., Shanabrook, B. V., Huh, S. W., Polyakov, A. Y., Skowronski, M., Sumakeris, J. J., O'Loughlin, M. J.

“…Low-injection minority carrier lifetimes (MCLs) and deep trap spectra have been investigated in n − 4H-SiC epilayers of varying layer thicknesses, in order to…”
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Structure of the carrot defect in 4H-SiC epitaxial layers by Benamara, M., Zhang, X., Skowronski, M., Ruterana, P., Nouet, G., Sumakeris, J. J., Paisley, M. J., O'Loughlin, M. J.

“…Transmission electron microscopy and KOH etching were used to determine the structure of the carrot defect in 4H-SiC epilayers. The defect consists of two…”
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12-kV p-Channel IGBTs With Low On-Resistance in 4H-SiC by Qingchun Zhang, Das, M., Sumakeris, J., Callanan, R., Agarwal, A.

“…SiC bipolar devices are favored over SiC unipolar devices for applications requiring breakdown voltage in excess of 10 kV. We have designed and fabricated…”
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Performance and Stability of Large-Area 4H-SiC 10-kV Junction Barrier Schottky Rectifiers by Hull, B.A., Sumakeris, J.J., O'Loughlin, M.J., Qingchun Zhang, Richmond, J., Powell, A.R., Imhoff, E.A., Hobart, K.D., Rivera-Lopez, A., Hefner, A.R.

“…The forward and reverse bias dc characteristics, the long-term stability under forward and reverse bias, and the reverse recovery performance of 4H-SiC…”
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Design and Characterization of High-Voltage 4H-SiC p-IGBTs by Zhang, Qingchun, Huang, Alex Q., Wang, Jun, Jonas, Charlotte, Callanan, Robert, Sumakeris, Joseph J., Ryu, Sei-Hyung, Das, Mrinal, Agarwal, Anant, Palmour, John

“…High-voltage p-channel 4H-SiC insulated gate bipolar transistors (IGBTs) have been fabricated and characterized. The devices have a forward voltage drop of 7.2…”
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Driving force of stacking-fault formation in SiC p-i-n diodes by Ha, S, Skowronski, M, Sumakeris, J J, Paisley, M J, Das, M K

“…The driving force of stacking-fault expansion in SiC p-i-n diodes was investigated using optical emission microscopy and transmission electron microscopy. The…”
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Cross-sectional structure of carrot defects in 4H–SiC epilayers by Zhang, X., Ha, S., Benamara, M., Skowronski, M., O’Loughlin, M. J., Sumakeris, J. J.

“…Surface morphology of carrot defects in 4H–SiC epilayers is described based on optical microscopy and molten potassium hydroxide etching. Its crystallographic…”
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Exploration of bulk and epitaxy defects in 4H-SiC using large scale optical characterization by Leonard, R. T., Paisley, M. J., Bubel, S., Sumakeris, J. J., Powell, A. R., Khlebnikov, Y., Seaman, J. C., Ambati, J., Burk, A. A., O'Loughlin, M. J., Balkas, E.

“…In this work, aggregate epitaxial carrot distributions are observed at the crystal, wafer and dislocation defect levels, instead of individual extended carrot…”
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Performance of Low-Dark-Current 4H-SiC Avalanche Photodiodes With Thin Multiplication Layer by Xiangyi Guo, Beck, A.L., Zhihong Huang, Ning Duan, Campbell, J.C., Emerson, D., Sumakeris, J.J.

“…The authors report on the fabrication and performance of low-dark-current 4H-SiC avalanche photodiodes with a thin 180-nm-thick p - multiplication layer. At a…”
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Study of reverse dark current in 4H-SiC avalanche photodiodes by Xiangyi Guo, Beck, A.L., Xiaowei Li, Campbell, J.C., Emerson, D., Sumakeris, J.

“…Temperature-dependent current-voltage (I-V) measurements have been used to determine the reverse dark current mechanisms in 4H-SiC avalanche photodiodes…”
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Spatial nonuniformity of 4H-SiC avalanche photodiodes at high gain by Xiangyi Guo, Beck, A.L., Campbell, J.C., Emerson, D., Sumakeris, J.

“…We report spatial nonuniformity of responsivity of 4H-SiC avalanche photodiodes at high gain (M > 1000) that results from variation in the doping density…”
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Stacking fault formation in SiC p-i-n diodes of (11-20) orientation by Ha, S., Hu, K., Skowronski, M., Sumakeris, J. J., Paisley, M. J., Das, M. K.

“…Formation of stacking faults in 4H-SiC p-i-n diodes fabricated on a (11-20) oriented substrate was investigated using optical emission microscopy and…”
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Applications of SiC MESFETs and GaN HEMTs in power amplifier design by Pribble, W.L., Palmour, J.W., Sheppard, S.T., Smith, R.P., Allen, S.T., Smith, T.J., Ring, Z., Sumakeris, J.J., Saxler, A.W., Milligan, J.W.

“…Very high power densities have been shown for both SiC MESFET and GaN HEMT devices. Both of these active devices benefit from the high breakdown voltages…”
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Drift-free 10-kV, 20-A 4H-SiC PiN diodes by Hull, Brett A, Das, Mrinal K, Sumakeris, Joseph J, Richmond, James T, Krishnaswami, Sumi

“…As impressive as the advancement in 4H-SiC material quality has been, 4H-SiC PiN diodes continue to suffer from irreversible, forward-voltage instabilities. In…”
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Planar defects in 4H-SiC PiN diodes by Twigg, M. E., Stahlbush, R. E., Irvine, K. G., Sumakeris, J. J., Chow, T. P., Lossee, P. A., Zhu, L.

“…Using plan-view transmission electron microscopy (PVTEM), we have identified stacking faults (SFs) and planar defects in 4H-SiC PiN diodes subjected to…”
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Investigations of 3C-SiC inclusions in 4H-SiC epilayers on 4H-SiC single crystal substrates by Si, Weimin, Dudley, Michael, Shuang Kong, Hua, Sumakeris, Joe, Carter, Calvin

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‘‘Drawbridge’’ fixture for folding rotary linear magnetic feedthroughs by Fitch, J. T., Sumakeris, J. J., Lucovsky, G.

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Large area SiC substrates and epitaxial layers for high power semiconductor devices — An industrial perspective by Müller, St.G., Brady, M.F., Burk, A.A., Hobgood, H.McD, Jenny, J.R., Leonard, R.T., Malta, D.P., Powell, A.R., Sumakeris, J.J., Tsvetkov, V.F., Carter, C.H.

“…We review the progress in the industrial production of SiC substrates and epitaxial layers for high power semiconductor devices. Optimization of SiC bulk…”
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Ultra High Power 10 kV, 50 A SiC PiN Diodes by Das, Mrinal K., Hull, Brett A., Richmond, James T., Heath, Bradley, Sumakeris, Joseph J., Powell, Adrian R.

“…Ultra high power 10 kV, 50 A SiC PiN diodes have been developed with a low forward voltage drop (V F ) of 3.75 V and a fast reverse recovery time of 150 nsec…”
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Characterization of SiC PiN diode forward bias degradation by Hefner, A., McNutt, T., Akuffo, A., Singh, R., Ellenwood, C., Berning, D., Das, M.K., Sumakeris, J.J., Stahlbush, R.

“…An automated test system is developed and utilized to electrically monitor the emitter, base, and end region excess carrier lifetimes at periodic intervals…”
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