Search Results - "Sukkaew, Pitsiri"

Unprecedented differences in the diamond nucleation density between carbon- and silicon-faces of 4H-silicon carbides by Wang, Bo, Sukkaew, Pitsiri, Song, Guichen, Rosenkranz, Andreas, Lu, Yunxiang, Nishimura, Kazhihito, Wang, Jia, Lyu, Jilei, Cao, Yang, Yi, Jian, Ojamäe, Lars, Li, He, Jiang, Nan

“…[Display omitted] 4H-silicon carbides deposited by diamond films have wide applications in many fields such as semiconductor heterojunction, heat sink and…”
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Growth Mechanism of SiC CVD: Surface Etching by H 2 , H Atoms, and HCl by Sukkaew, Pitsiri, Danielsson, Örjan, Ojamäe, Lars

“…Silicon carbide is a wide bandgap semiconductor with unique characteristics suitable for high temperature and high power applications. Fabrication of SiC…”
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Reduction of Carbon Impurities in Aluminum Nitride from Time-Resolved Chemical Vapor Deposition Using Trimethylaluminum by Rouf, Polla, Sukkaew, Pitsiri, Ojamäe, Lars, Pedersen, Henrik

“…Aluminum nitride (AlN) is a semiconductor with a wide range of applications from light-emitting diodes to high-frequency transistors. Electronic grade AlN is…”
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A Systematic Method for Predictive In Silico Chemical Vapor Deposition by Danielsson, Örjan, Karlsson, Matts, Sukkaew, Pitsiri, Pedersen, Henrik, Ojamäe, Lars

“…A comprehensive systematic method for chemical vapor deposition modeling consisting of seven well-defined steps is presented. The method is general in the…”
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Growth Mechanism of SiC CVD: Surface Etching by H2, H Atoms, and HCl by Sukkaew, Pitsiri, Danielsson, Örjan, Ojamäe, Lars

“…Silicon carbide is a wide bandgap semiconductor with unique characteristics suitable for high temperature and high power applications. Fabrication of SiC…”
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Ab Initio Study of Growth Mechanism of 4H–SiC: Adsorption and Surface Reaction of C 2 H 2 , C 2 H 4 , CH 4 , and CH 3 by Sukkaew, Pitsiri, Danielsson, Örjan, Kordina, Olof, Janzén, Erik, Ojamäe, Lars

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Growth Mechanism of SiC Chemical Vapor Deposition: Adsorption and Surface Reactions of Active Si Species by Sukkaew, Pitsiri, Kalered, Emil, Janzén, Erik, Kordina, Olof, Danielsson, Örjan, Ojamäe, Lars

“…Silicon carbide is a wide bandgap semiconductor ideally suitable for high temperature and high power applications. An active SiC layer is usually fabricated…”
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Ab Initio Study of Growth Mechanism of 4H–SiC: Adsorption and Surface Reaction of C2H2, C2H4, CH4, and CH3 by Sukkaew, Pitsiri, Danielsson, Örjan, Kordina, Olof, Janzén, Erik, Ojamäe, Lars

“…Silicon carbide is a semiconductor material with ideal properties for high-temperature and high-power applications. The epitaxial layer fabrication is usually…”
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Thermal conductivity of ultra-wide bandgap thin layers – High Al-content AlGaN and β-Ga2O3 by Tran, Dat Q., Blumenschein, Nicholas, Mock, Alyssa, Sukkaew, Pitsiri, Zhang, Hengfang, Muth, John F., Paskova, Tania, Paskov, Plamen P., Darakchieva, Vanya

“…Transient thermoreflectance (TTR) technique is employed to study the thermal conductivity of β-Ga2O3 and high Al-content AlxGa1-xN semiconductors, which are…”
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Silicon Chemistry in Fluorinated Chemical Vapor Deposition of Silicon Carbide by Stenberg, Pontus, Sukkaew, Pitsiri, Farkas, Ildiko, Kordina, Olof, Janzén, Erik, Ojamäe, Lars, Danielsson, Örjan, Pedersen, Henrik

“…The use of chlorinated chemical vapor deposition (CVD) chemistry for growth of homoepitaxial layers of silicon carbide (SiC) has diminished the problem of…”
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Effects of surface charge and Gibbs surface energy on the settlement behaviour of barnacle cyprids (Balanus amphitrite) by Petrone, Luigi, Di Fino, Alessio, Aldred, Nick, Sukkaew, Pitsiri, Ederth, Thomas, Clare, Anthony S., Liedberg, Bo

“…Gibbs surface energy has long been considered to be an important parameter in the design of fouling-resistant surfaces for marine applications. Rigorous…”
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Optimization of GaN Nanowires Reformation Process by Metalorganic Chemical Vapor Deposition for Device‐Quality GaN Templates by Delgado Carrascon, Rosalia, Tran, Dat Quoc, Sukkaew, Pitsiri, Mock, Alyssa, Ciechonski, Rafal, Ohlsson, Jonas, Zhu, Yadan, Hultin, Olof, Monemar, Bo, Paskov, Plamen P., Samuelson, Lars, Darakchieva, Vanya

“…Herein, the potential of reformed GaN nanowires (NWs) fabricated by metalorganic chemical vapor deposition (MOCVD) for device‐quality low‐defect density…”
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A Quantum Chemical Exploration of SiC Chemical Vapor Deposition by Sukkaew, Pitsiri

“…SiC is a wide bandgap semiconductor with many attractive properties. It has attracted particular attentions in the areas of power and sensor devices as well as…”
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Brominated Chemistry for Chemical Vapor Deposition of Electronic Grade SiC by Yazdanfar, Milan, Danielsson, Örjan, Kalered, Emil, Sukkaew, Pitsiri, Kordina, Olle, Nilsson, Daniel, Ivanov, Ivan G, Ojamäe, Lars, Janzén, Erik, Pedersen, Henrik

“…Chlorinated chemical vapor deposition (CVD) chemistry for growth of homoepitaxial layers of silicon carbide (SiC) has paved the way for very thick epitaxial…”
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Shortcomings of CVD modeling of SiC today by Danielsson, Ö., Sukkaew, P., Ojamäe, L., Kordina, O., Janzén, E.

“…The active, epitaxial layers of silicon carbide (SiC) devices are grown by chemical vapor deposition (CVD), at temperatures above 1,600 °C, using silane and…”
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A growth model of cubic GaN microstripes grown by MOVPE: Vapour phase diffusion model including surface migration effects by Sukkaew, Pitsiri, Sanorpim, Sakuntam, Onabe, Kentaro

“…Growth features of c‐GaN stripes grown by selective area metalorganic vapour phase epitaxy (SA‐MOVPE) on GaAs (001) substrates with stripe patterns aligned…”
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On the use of methane as a carbon precursor in Chemical Vapor Deposition of silicon carbide by Yazdanfar, M., Pedersen, H., Sukkaew, P., Ivanov, I.G., Danielsson, Ö., Kordina, O., Janzén, E.

“…It is generally considered that methane is not a suitable carbon precursor for growth of silicon carbide (SiC) epitaxial layers by Chemical Vapor Deposition…”
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