Search Results - "Sukeshni Tirkey"
-
1
A New Design Approach of Dopingless Tunnel FET for Enhancement of Device Characteristics
Published in IEEE transactions on electron devices (01-04-2017)“…Formation of abrupt tunneling junction for the sub-nanometer tunnel FET (TFET) is crucial for achieving better electrical behavior. This task is more…”
Get full text
Journal Article -
2
Analysis of a Novel Metal Implant Junctionless Tunnel FET for Better DC and Analog/RF Electrostatic Parameters
Published in IEEE transactions on electron devices (01-09-2017)“…Steep rise in the subthreshold slope, high current driving capability, and negligible ambipolarity are the major prerequisite conditions of tunnel FETs (TFETs)…”
Get full text
Journal Article -
3
A Novel Approach to Improve the Performance of Charge Plasma Tunnel Field-Effect Transistor
Published in IEEE transactions on electron devices (01-01-2018)“…A distinct approach is presented for realizing charge plasma tunnel field-effect transistor (CP TFET) wherein p + substrate is taken as silicon film and then…”
Get full text
Journal Article -
4
Integration of Machine Learning with Statistical Variation Analysis for Ferroelectric Transistor (FE-MOSFETs)
Published in Materials Open (01-01-2024)“…This paper investigates a comparative analysis of technology computer-aided design (TCAD) versus machine learning (ML) technique for ferroelectric-based…”
Get full text
Journal Article -
5
A Dielectric Modulated Biosensor for SARS-CoV-2
Published in IEEE sensors journal (01-07-2021)“…The manuscript proposes a novel dielectric modulated FET biosensor for the detection of SARS-CoV-2 in terms of spike, envelope and DNA proteins of the virus…”
Get full text
Journal Article -
6
Performance Assessment of A Novel Vertical Dielectrically Modulated TFET-Based Biosensor
Published in IEEE transactions on electron devices (01-09-2017)“…A vertical dielectrically modulated tunnel field-effect transistor (V-DMTFET) as a label-free biosensor has been investigated in this paper for the first time…”
Get full text
Journal Article -
7
Controlling ambipolar current of dopingless tunnel field-effect transistor
Published in Applied physics. A, Materials science & processing (01-12-2018)“…Ambipolarity in tunnel field-effect transistor (TFET) is a subject of grave concern in the current scenario of the semiconductor industry as this property of…”
Get full text
Journal Article -
8
Source engineered tunnel FET for enhanced device electrostatics with trap charges reliability
Published in Microelectronic engineering (05-07-2018)“…This paper reports a new configuration of tunnel field-effect transistor (TFET) for improving current drivability of device along with reduced threshold…”
Get full text
Journal Article -
9
Metal-strip approach on junctionless TFET in the presence of positive charge
Published in Applied physics. A, Materials science & processing (01-09-2019)“…In this research, to achieve steep subthreshold slope, high I on / I off ratio and low ambipolarity in TFETs, we have proposed a device which consists of metal…”
Get full text
Journal Article -
10
Introduction of a metal strip in oxide region of junctionless tunnel field-effect transistor to improve DC and RF performance
Published in Journal of computational electronics (01-09-2017)“…Achieving steeper subthreshold slope and high ON–OFF current ratio ( I ON / I OFF ) is essential for use of semiconductor devices in switching applications. It…”
Get full text
Journal Article -
11
A systematic investigation of the integrated effects of gate underlapping, dual work functionality and hetero gate dielectric for improved performance of CP TFETs
Published in Journal of computational electronics (01-03-2018)“…This paper presents a comparative analysis of the combined effects of gate underlapping and dual work functionality with hetero gate dielectric engineering for…”
Get full text
Journal Article -
12
Design of Full Adder Circuits with Optimized Power and Speed Using CMOS Technique
Published in 2024 IEEE International Students' Conference on Electrical, Electronics and Computer Science (SCEECS) (24-02-2024)“…Circuits for a 1-bit complete adder are proposed in this paper. The suggested circuits have very low power consumption and minimal delay [1]. CMOS technology…”
Get full text
Conference Proceeding -
13
A Technique to Optimize Clock Latency after CCOpt exploiting Useful Skew
Published in 2024 IEEE International Students' Conference on Electrical, Electronics and Computer Science (SCEECS) (24-02-2024)“…A crucial phase in the physical design flow is clock tree synthesis (CTS). CTS constructs the clock tree by balancing the skew throughout the design for every…”
Get full text
Conference Proceeding -
14
Investigation of gate material engineering in junctionless TFET to overcome the trade-off between ambipolarity and RF/linearity metrics
Published in Superlattices and microstructures (01-09-2017)“…In this work, we investigate for the first time dual material control gate junctionless tunnel-field effect transistor (DMCG-JLTFET) to improve the metrics in…”
Get full text
Journal Article -
15
Comparative investigation of novel hetero gate dielectric and drain engineered charge plasma TFET for improved DC and RF performance
Published in Superlattices and microstructures (01-11-2017)“…Tunnel-field-effect-transistor (TFET) has emerged as one of the most prominent devices to replace conventional MOSFET due to its ability to provide…”
Get full text
Journal Article -
16
Enhanced low dimensional MOSFETs with variation of high K dielectric materials
Published in 2023 IEEE International Students' Conference on Electrical, Electronics and Computer Science (SCEECS) (18-02-2023)“…This works shows the effect of different dielectric material which are used in gate dielectric material in metal oxide semiconductor field effect transistor…”
Get full text
Conference Proceeding -
17
Controlling ambipolar behavior and improving radio frequency performance of hetero junction double gate TFET by dual work-function, hetero gate dielectric, gate underlap: Assessment and optimization
Published in 2017 International Conference on Information, Communication, Instrumentation and Control (ICICIC) (01-08-2017)“…In this paper, investigation for different configurations of N-type Hetero Junction Double Gate Tunnel Field-Effect Transistor (HJ-TFET) with Dual metal gate…”
Get full text
Conference Proceeding -
18
Recessed-Source/Drain Junctionless GAA MOSFETs and their Sensitivity to Temperature: A Machine learning based Analysis
Published in 2023 International Conference on Next Generation Electronics (NEleX) (14-12-2023)“…This article compares the performance of Recessed -Source/Drain Junction less Gate All Around (Re -S/D-JL-GAA ) MOSFETs to Junction less Gate All Around…”
Get full text
Conference Proceeding -
19
A Review on Graphene Transistors
Published in 2023 IEEE International Students' Conference on Electrical, Electronics and Computer Science (SCEECS) (18-02-2023)“…The silicon complementary metal-oxide-semiconductor (CMOS) technology is the leading electronic industry. Today, silicon CMOS technology has hit its basic…”
Get full text
Conference Proceeding -
20
Channel engineered tunnel FET for reduced ambipolar nature
Published in 2017 Fifth Berkeley Symposium on Energy Efficient Electronic Systems & Steep Transistors Workshop (E3S) (01-10-2017)“…Ambipolar conduction is a subject of grave concern for the steep subthreshold slope tunnel field-effect transistor (TFET) to use it in CMOS circuits. For this,…”
Get full text
Conference Proceeding