Search Results - "Sugiura, Kazuhiko"
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High-temperature reliability of sintered microporous Ag on electroplated Ag, Au, and sputtered Ag metallization substrates
Published in Journal of materials science. Materials in electronics (01-02-2018)“…Ag sinter joining technology has been used in the advanced power applications to replace conventional soldering technology due to its high temperature…”
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Journal Article -
2
Macroscale and microscale fracture toughness of microporous sintered Ag for applications in power electronic devices
Published in Acta materialia (01-05-2017)“…The application of microporous sintered silver (Ag) as a bonding material to replace conventional die-bonding materials in power electronic devices has…”
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3
Self-healing of cracks in Ag joining layer for die-attachment in power devices
Published in Applied physics letters (29-08-2016)“…Sintered silver (Ag) joining has attracted significant interest in power devices modules for its ability to form stable joints with a porous interconnection…”
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4
Mechanical Deformation of Sintered Porous Ag Die Attach at High Temperature and Its Size Effect for Wide-Bandgap Power Device Design
Published in Journal of electronic materials (01-03-2017)“…The mechanical properties of sintered Ag paste with microporous structure have been investigated by tensile and shear tests, focusing on the…”
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5
Thermal stability improvement of sintered Ag die-attach materials by addition of transition metal compound particles
Published in Applied physics letters (22-04-2019)“…Sintered silver (Ag) die-attach has attracted much attention in assembling power modules for high power density and high temperature operation. We have…”
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6
Resistance factors of pecky rice incidence caused by the rice stink bugs (Leptocorisa chinensis, Nezara viridula) in rice line CRR-99-95W
Published in Plant production science (03-04-2022)“…Pecky rice incidence caused by rice stink bugs greatly decreases the quality of rice grain and has come a big problem not only in Japan but also many other…”
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7
CoW metallization for high strength bonding to both sintered Ag joints and encapsulation resins
Published in Journal of materials science. Materials in electronics (01-06-2019)“…One of the applications of wide band gap semiconductors is high temperature operation. That application requires high temperature compatible (i) joining…”
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8
High-Temperature Die Attachment Using Sn-Plated Zn Solder for Power Electronics
Published in IEEE transactions on components, packaging, and manufacturing technology (2011) (01-07-2015)“…Pure Zn is a Pb-free die-attach material considered suitable for application in high-temperature electronics such as widebandgap semiconductor devices, as it…”
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9
Reduction of Rice Chalky Grain by Deep and Permanent Irrigation Method; Effect on Growth and Grain Quality of Rice
Published in Plant production science (2011)“…Formation of chalky grains which is the main cause of the degradation of rice grain quality occurs frequently when the temperature during the 20 days after…”
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10
Prominent interface structure and bonding material of power module for high temperature operation
Published in 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) (01-05-2017)“…Sintered Ag is well known for die-attach materials, suitable for Ag metalized interfaces with a self-healing function of generated cracks. A remaining risk of…”
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Conference Proceeding -
11
Online Condition Monitoring of Solder Fatigue in a Clip-Bonding SiC mosfet Power Assembly via Acoustic Emission Technique
Published in IEEE transactions on power electronics (01-02-2023)“…In this work, an acoustic emission (AE) technique was applied to online condition monitoring (CM) of solder fatigue in a clip-bonding SiC mosfet power assembly…”
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12
Reliability Evaluation of SiC Power Module With Sintered Ag Die Attach and Stress-Relaxation Structure
Published in IEEE transactions on components, packaging, and manufacturing technology (2011) (01-04-2019)“…Silicon carbide (SiC) power modules with Ag sinter-bonding die attach were designed on the basis of thermal stress analysis for reliable high-temperature…”
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13
High Temperature Resistant Packaging Technology for SiC Power Module by Using Ni Micro-Plating Bonding
Published in 2019 IEEE 69th Electronic Components and Technology Conference (ECTC) (01-05-2019)“…New bonding technologies, which can deliver high-temperature thermal resistance that replaces solder bonding or Al wire bonding, have been strongly expected in…”
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Conference Proceeding -
14
Effect of W content in Co-W-P metallization on both oxidation resistance and resin adhesion
Published in Journal of materials science (2020)“…The application of Co-W-P plating technology in high-temperature package structure is advantageous from a point of structural reliability because Co-W-P…”
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15
Development of Packaging Technology for High Temperature Resistant SiC Module of Automobile Application
Published in 2017 IEEE 67th Electronic Components and Technology Conference (ECTC) (01-05-2017)“…Aiming for application to the inverter system of HEV and EV, we have developed a novel packaging technique for SiC power devices based on Nickel Micro Plating…”
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Conference Proceeding -
16
6-in-1 Silicon carbide power module for high performance of power electronics systems
Published in 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) (01-06-2014)“…The excellent characteristics (low power loss, high speed/high temperature operation) of SiC semiconductors can contribute to realizing smaller power converter…”
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Conference Proceeding -
17
In situ TEM observation of sintered Ag die-attach layer with added tungsten carbide particles while heating to high temperature
Published in Japanese Journal of Applied Physics (01-10-2019)“…We carried out in situ transmission electron microscopy (TEM) on the microstructural change of a sintered Ag die-attach layer heated to 600 °C. It was found…”
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18
Low temperature Cu sinter joining on different metallization substrates and its reliability evaluation with a high current density
Published in 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD) (30-05-2021)“…Cu sinter joining technology have got a lot attention for next-generation wide band gap (WBG) power modules which will subject a high temperature above 250 °C…”
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Conference Proceeding -
19
Effect of annealing Co-W-P metallization substrate onto its resin adhesion
Published in Journal of materials science. Materials in electronics (01-07-2019)“…The use of a Co-W-P metallization substrate in SiC power modules is expected to improve high temperature reliability because Co-W-P metallization has been…”
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Journal Article -
20
Development of Solder Deterioration Diagnosis System of a Power Module via the Acoustic Emission Monitoring (AEM) Technique
Published in 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD) (30-05-2021)“…In this work, we applied a acoustic emission monitoring (AEM) technique to inspect solder deterioration in a clip-bonding SiC MOSFET power module during power…”
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Conference Proceeding