Search Results - "Sugawa, S."

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  1. 1

    Ultrafast energy exchange between two single Rydberg atoms on a nanosecond timescale by Chew, Y., Tomita, T., Mahesh, T. P., Sugawa, S., de Léséleuc, S., Ohmori, K.

    Published in Nature photonics (01-10-2022)
    “…Rydberg atoms, with their enormous electronic orbitals, exhibit dipole–dipole interactions reaching the gigahertz range at a distance of a micrometre, making…”
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    Journal Article
  2. 2

    Direct observation of zitterbewegung in a Bose-Einstein condensate by LeBlanc, L J, Beeler, M C, Jiménez-García, K, Perry, A R, Sugawa, S, Williams, R A, Spielman, I B

    Published in New journal of physics (03-07-2013)
    “…Zitterbewegung, a force-free trembling motion first predicted for relativistic fermions like electrons, was an unexpected consequence of the Dirac equation's…”
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    Journal Article
  3. 3

    Geometrical Pumping with a Bose-Einstein Condensate by Lu, H-I, Schemmer, M, Aycock, L M, Genkina, D, Sugawa, S, Spielman, I B

    Published in Physical review letters (20-05-2016)
    “…We realized a quantum geometric "charge" pump for a Bose-Einstein condensate (BEC) in the lowest Bloch band of a novel bipartite magnetic lattice. Topological…”
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  4. 4

    Local thermal conductivity properties of a SiGe nanowire observed by laser power sweep Raman spectroscopy by Sugawa, S., Yokogawa, R., Ogura, A.

    Published in Japanese Journal of Applied Physics (29-02-2024)
    “…Abstract Using laser power sweep Raman spectroscopy, this research reports that the thermal transport changes with the wire width of silicon-germanium (SiGe)…”
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  5. 5

    Multiple-camera defocus imaging of ultracold atomic gases by Perry, A. R., Sugawa, S., Salces-Carcoba, F., Yue, Y., Spielman, I. B.

    Published in Optics express (24-05-2021)
    “…In cold atom experiments, each image of light refracted and absorbed by an atomic ensemble carries a remarkable amount of information. Numerous imaging…”
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    Journal Article
  6. 6

    Picosecond-Scale Ultrafast Many-Body Dynamics in an Ultracold Rydberg-Excited Atomic Mott Insulator by Bharti, V., Sugawa, S., Mizoguchi, M., Kunimi, M., Zhang, Y., de Léséleuc, S., Tomita, T., Franz, T., Weidemüller, M., Ohmori, K.

    Published in Physical review letters (22-09-2023)
    “…We report the observation and control of ultrafast many-body dynamics of electrons in ultracold Rydberg-excited atoms, spatially ordered in a three-dimensional…”
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  7. 7

    Strong Spin-Motion Coupling in the Ultrafast Dynamics of Rydberg Atoms by Bharti, V, Sugawa, S, Kunimi, M, Chauhan, V S, Mahesh, T P, Mizoguchi, M, Matsubara, T, Tomita, T, de Léséleuc, S, Ohmori, K

    Published in Physical review letters (30-08-2024)
    “…Rydberg atoms in optical lattices and tweezers is now a well-established platform for simulating quantum spin systems. However, the role of the atoms' spatial…”
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    Journal Article
  8. 8

    Equations of state from individual one-dimensional Bose gases by Salces-Carcoba, F, Billington, C J, Putra, A, Yue, Y, Sugawa, S, Spielman, I B

    Published in New journal of physics (23-11-2018)
    “…We trap individual 1D Bose gases and obtain the associated equation of state by combining calibrated confining potentials with in situ density profiles. Our…”
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  9. 9

    A sensitivity and linearity improvement of a 100-dB dynamic range CMOS image sensor using a lateral overflow integration capacitor by Akahane, N., Sugawa, S., Adachi, S., Mori, K., Ishiuchi, T., Mizobuchi, K.

    Published in IEEE journal of solid-state circuits (01-04-2006)
    “…In a CMOS image sensor featuring a lateral overflow integration capacitor in a pixel, which integrates the overflowed charges from a fully depleted photodiode…”
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    Journal Article Conference Proceeding
  10. 10

    Effect of Drain-to-Source Voltage on Random Telegraph Noise Based on Statistical Analysis of MOSFETs with Various Gate Shapes by Akimoto, R., Kuroda, R., Teramoto, A., Mawaki, T., Ichino, S., Suwa, T., Sugawa, S.

    “…In this work, temporal noise characteristics of 11520 MOSFETs were measured for each of rectangular and trapezoidal shaped gates, and characteristics of random…”
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    Conference Proceeding
  11. 11

    Atomically Flat Silicon Surface and Silicon/Insulator Interface Formation Technologies for (100) Surface Orientation Large-Diameter Wafers Introducing High Performance and Low-Noise Metal-Insulator-Silicon FETs by Kuroda, R., Suwa, T., Teramoto, A., Hasebe, R., Sugawa, S., Ohmi, T.

    Published in IEEE transactions on electron devices (01-02-2009)
    “…Technology to atomically flatten the silicon surface on (100) orientation large-diameter wafer and the formation technology of an atomically flat insulator…”
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  12. 12

    Optimum Design of Conversion Gain and Full Well Capacity in CMOS Image Sensor With Lateral Overflow Integration Capacitor by Akahane, N., Adachi, S., Mizobuchi, K., Sugawa, S.

    Published in IEEE transactions on electron devices (01-11-2009)
    “…An optimum design theory to clarify a possible limit of achieving both high conversion gain (CG) and full well capacity (FWC) at the same time in a CMOS image…”
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  13. 13

    Very High Carrier Mobility for High-Performance CMOS on a Si(110) Surface by Teramoto, A., Hamada, T., Yamamoto, M., Gaubert, P., Akahori, H., Nii, K., Hirayama, M., Arima, K., Endo, K., Sugawa, S., Ohmi, T.

    Published in IEEE transactions on electron devices (01-06-2007)
    “…In this paper, we demonstrate CMOS characteristics on a Si(110) surface using surface flattening processes and radical oxidation. A Si(110) surface is easily…”
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  14. 14

    Three-Dimensional Wave Optical Simulation for Image Sensors by Localized Boundary Element Method by Mutoh, H., Sugawa, S.

    Published in IEEE transactions on electron devices (01-11-2009)
    “…A novel wave optical simulation method [a localized boundary element method (BEM)] has been developed. This method enables us to execute 3-D wave optical…”
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  15. 15

    A 1.9 e^ Random Noise CMOS Image Sensor With Active Feedback Operation in Each Pixel by Woonghee Lee, Akahane, N., Adachi, S., Mizobuchi, K., Sugawa, S.

    Published in IEEE transactions on electron devices (01-11-2009)
    “…A 1.9 e - random noise CMOS image sensor has been developed by applying an active feedback operation (AFO), which uses a capacitive feedback effect to floating…”
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  16. 16

    A Wide DR and Linear Response CMOS Image Sensor With Three Photocurrent Integrations in Photodiodes, Lateral Overflow Capacitors, and Column Capacitors by Ide, N., Lee, W., Akahane, N., Sugawa, S.

    Published in IEEE journal of solid-state circuits (01-07-2008)
    “…A 1/3-inch, 800 H x 600 v pixels, 5.6 x 5.6 mum 2 color CMOS image sensor with three photocurrent integrations in pixel photodiodes, pixel lateral overflow…”
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    Journal Article
  17. 17

    The study of time constant analysis in random telegraph noise at the subthreshold voltage region by Yonezawa, A., Teramoto, A., Obara, T., Kuroda, R., Sugawa, S., Ohmi, T.

    “…We extracted time constants capture and emission of Random Telegraph Noise (RTN), and their dependencies of the gate-source voltage from numerous MOSFETs and…”
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    Conference Proceeding
  18. 18

    Statistical analysis of Random Telegraph Noise reduction effect by separating channel from the interface by Yonezawa, A., Teramoto, A., Kuroda, R., Suzuki, H., Sugawa, S., Ohmi, T.

    “…Random Telegraph Noise (RTN) has become one of the most important problems in the continuous downscaling of CMOS circuitry. We demonstrate the RTN reduction by…”
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    Conference Proceeding
  19. 19

    Quantum Degenerate Fermi Gases of Ytterbium Atoms by Fukuhara, T., Takasu, Y., Sugawa, S., Takahashi, Y.

    Published in Journal of low temperature physics (01-08-2007)
    “…We performed evaporative cooling for dilute gases of ytterbium (Yb) isotopes in a crossed optical dipole trap and successfully cooled two fermionic and two…”
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  20. 20

    Demonstrating individual leakage path from random telegraph signal of stress induced leakage current by Teramoto, A., Inatsuka, T., Obara, T., Akagawa, N., Kuroda, R., Sugawa, S., Ohmi, T.

    “…Time-dependent characteristics of stress induced leakage current (SILC) for the 5.7 and 7.7 nm oxides were evaluated to detect the random telegraph signal…”
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    Conference Proceeding