Search Results - "Suemitsu, M"

Effects of silicon doping on the chemical bonding states and properties of nitrogen-doped diamond-like carbon films by plasma-enhanced chemical vapor deposition by Nakamura, K., Ohashi, H., Enta, Y., Kobayashi, Y., Suzuki, Y., Suemitsu, M., Nakazawa, H.

“…•The properties of Si and N doped diamond-like carbon (Si–N–DLC) have been examined.•The internal stress on Si–N–DLC was lower than that on N doped DLC.•The…”
Get full text

Inhomogeneous longitudinal distribution of Ni atoms on graphene induced by layer-number-dependent internal diffusion by Hasegawa, M., Tashima, K., Kotsugi, M., Ohkochi, T., Suemitsu, M., Fukidome, H.

“…The intrinsic transport properties, such as carrier mobility and saturation velocity, of graphene are the highest among materials owing to its linear band…”
Get full text

Actinomycosis in the mandible: CT and MR findings by Sasaki, Y, Kaneda, T, Uyeda, J W, Okada, H, Sekiya, K, Suemitsu, M, Sakai, O

“…Mandibular actinomycosis is an uncommon disease. We retrospectively reviewed 6 patients with pathologically proven mandibular actinomycosis who underwent both…”
Get full text

Observing hot carrier distribution in an n -type epitaxial graphene on a SiC substrate by Someya, T., Fukidome, H., Ishida, Y., Yoshida, R., Iimori, T., Yukawa, R., Akikubo, K., Yamamoto, Sh, Yamamoto, S., Yamamoto, T., Kanai, T., Funakubo, K., Suemitsu, M., Itatani, J., Komori, F., Shin, S., Matsuda, I.

“…Hot carrier dynamics in the Dirac band of n-type epitaxial graphene on a SiC substrate were traced in real time using femtosecond-time-resolved photoemission…”
Get full text

Precise control of epitaxy of graphene by microfabricating SiC substrate by Fukidome, H., Kawai, Y., Fromm, F., Kotsugi, M., Handa, H., Ide, T., Ohkouchi, T., Miyashita, H., Enta, Y., Kinoshita, T., Seyller, Th, Suemitsu, M.

Get full text

Clinical application of parameteric X-ray in diagnostic imaging: Preliminary study by Kaneda, T, Kawashima, Y, Sasaki, Y, Suemitsu, M, Okada, H, Hayakawa, Y, Sakae, T, Muraoka, H, Hirahara, N

Get full text

Mechanical and tribological properties of boron, nitrogen-coincorporated diamond-like carbon films prepared by reactive radio-frequency magnetron sputtering by Nakazawa, H., Sudoh, A., Suemitsu, M., Yasui, K., Itoh, T., Endoh, T., Narita, Y., Mashita, M.

“…We have deposited boron- and/or nitrogen-incorporated DLC films by radio-frequency magnetron sputtering, and systematically investigated the structure and the…”
Get full text

Effects of hydrogen on the properties of Si-incorporated diamond-like carbon films prepared by pulsed laser deposition by Nakazawa, H., Osozawa, R., Okuzaki, T., Sato, N., Suemitsu, M., Abe, T.

“…We have deposited unhydrogenated and hydrogenated Si-incorporated DLC (Si-DLC) films by pulsed laser deposition using KrF excimer laser, and systematically…”
Get full text

Changes in chemical bonding of diamond-like carbon films by atomic-hydrogen exposure by Nakazawa, H., Osozawa, R., Enta, Y., Suemitsu, M.

“…We have deposited unhydrogenated diamond-like carbon (DLC) films on Si substrate by pulsed laser deposition using KrF excimer laser, and investigated the…”
Get full text

Thermal effects on structural properties of diamond-like carbon films prepared by pulsed laser deposition by Nakazawa, H., Yamagata, Y., Suemitsu, M., Mashita, M.

“…We have deposited diamond-like carbon (DLC) films by pulsed laser deposition using a KrF excimer laser (248 nm), and have investigated the thermal effects on…”
Get full text

Vacancy formation during oxidation of silicon crystal surface by Suezawa, M., Yamamoto, Y., Suemitsu, M., Usami, N., Yonenaga, I.

“…To study the formation of interstitials and vacancies during oxidation of silicon crystals, we applied a quenching method, namely, oxidation at high…”
Get full text

Atomic hydrogen etching of silicon-incorporated diamond-like carbon films prepared by pulsed laser deposition by Nakazawa, H., Sugita, H., Enta, Y., Suemitsu, M., Yasui, K., Itoh, T., Endoh, T., Narita, Y., Mashita, M.

“…We have deposited Si-DLC films by pulsed laser deposition using KrF excimer laser, and have investigated etching of the Si-DLC films by atomic hydrogen. We…”
Get full text

Low temperature growth of polycrystalline Si on polyethylene terephthalate (PET) films using pulsed-plasma CVD under near atmospheric pressure by Matsumoto, M., Inayoshi, Y., Suemitsu, M., Yara, T., Nakajima, S., Uehara, T., Toyoshima, Y.

“…High quality polycrystalline Si films deposited on polyethylene terephthalate (PET) substrates without incubation layers have been achieved with high growth…”
Get full text

Point defects generated by oxidation of silicon crystal surface by Suezawa, M., Yamamoto, Y., Suemitsu, M., Yonenaga, I.

“…To study the generation of interstitials and vacancies due to oxidation of silicon crystals, we applied a quenching method, namely, oxidation at high…”
Get full text

Initial adsorption and C-incorporation of organosilanes at Si(0 0 1) investigated by temperature-programmed desorption by Senthil, K., Suemitsu, M.

“…Temperature-programmed desorption (TPD) has been used to study the initial adsorption and C-incorporation of organosilanes [monomethylsilane (MMS),…”
Get full text

Silicon Carbide on Silicon (110): Surface Structure and Mechanisms of Epitaxial Growth by Sambonsuge, S., Nikitina, L. N., Hervieu, Yu. Yu, Suemitsu, M., Filimonov, S. N.

“…Results of investigations of the SiC/Si growth from monomethylsilane are reported. Growth conditions favoring the rotated epitaxy of 3C-SiC(111) films on…”
Get full text

Adsorption and abstraction of atomic hydrogen on the Si(1 1 0) surfaces by Khan, A.R., Narita, Y., Namiki, A., Kato, A., Suemitsu, M.

“…The abstraction reaction of D adatoms by H atoms have been investigated on the Si(1 1 0) surfaces. The direct abstraction to form HD molecules obeys a…”
Get full text

Low-temperature formation of silicon nitride films using pulsed-plasma CVD under near atmospheric pressure by Matsumoto, M., Inayoshi, Y., Suemitsu, M., Miyamoto, E., Yara, T., Nakajima, S., Uehara, T., Toyoshima, Y.

“…Silicon nitride (SiN X ) film fabrication on polyethylene terephthalate (PET) substrates has been achieved at a low temperature (∼100 °C) by plasma enhanced…”
Get full text

Initial oxidation of HF-acid treated Si(1 0 0) surfaces under air exposure studied by synchrotron radiation X-ray photoelectron spectroscopy by Hirose, F., Nagato, M., Kinoshita, Y., Nagase, S., Narita, Y., Suemitsu, M.

“…Initial oxidation of HF-acid treated Si(1 0 0) surfaces with air exposure has been studied by using synchrotron radiation X-ray photoelectron spectroscopy. We…”
Get full text

Saturated adsorption of PH3 on Si(100):P and its application to digital control of phosphorus coverage on Si(100) surface by TSUKIDATE, Y, SUEMITSU, M

Get full text