Search Results - "Suemasu, T."

High thermoelectric power factors in polycrystalline germanium thin films by Ozawa, T., Imajo, T., Suemasu, T., Toko, K.

“…The high potential of polycrystalline Ge as a thin-film thermoelectric material was demonstrated. We synthesize a polycrystalline Ge layer on an insulating…”
Get full text

Thermoelectric properties of low-temperature-grown polycrystalline InAs1−xSbx films by Nishida, T., Ishiyama, T., Nozawa, K., Suemasu, T., Toko, K.

“…The development of thin-film thermoelectric generators for micro-energy harvesting is highly anticipated. In this study, we have investigated the synthesis and…”
Get full text

Zn-induced layer exchange of p- and n-type nanocrystalline SiGe layers for flexible thermoelectrics by Tsuji, M., Kusano, K., Suemasu, T., Toko, K.

“…Fermi-level control in a polycrystalline SiGe layer is challenging, especially under a low thermal budget owing to the low activation rate of impurities and…”
Get full text

High-electron mobility P-doped polycrystalline GeSn layers formed on insulators at low temperatures by Nozawa, K., Ishiyama, T., Nishida, T., Saitoh, N., Yoshizawa, N., Suemasu, T., Toko, K.

“…Despite its long history, synthesizing n-type polycrystalline Ge layers with high-electron mobility on insulating substrates has been difficult. Based on our…”
Get full text

Low-temperature (180 °C) formation of large-grained Ge (111) thin film on insulator using accelerated metal-induced crystallization by Toko, K., Numata, R., Oya, N., Fukata, N., Usami, N., Suemasu, T.

“…The Al-induced crystallization (AIC) yields a large-grained (111)-oriented Ge thin film on an insulator at temperatures as low as 180 °C. We accelerated the…”
Get full text

Solid-phase crystallization of densified amorphous GeSn leading to high hole mobility (540 cm2/V s) by Moto, K., Saitoh, N., Yoshizawa, N., Suemasu, T., Toko, K.

“…Improving carrier mobility of polycrystalline Ge films by incorporating Sn is a topic recently attracting a great deal of attention. Here, we substantially…”
Get full text

High-quality multilayer graphene on an insulator formed by diffusion controlled Ni-induced layer exchange by Murata, H., Saitoh, N., Yoshizawa, N., Suemasu, T., Toko, K.

“…The Ni-induced layer-exchange growth of amorphous carbon is a unique method used to fabricate uniform multilayer graphene (MLG) directly on an insulator. To…”
Get full text

70 °C synthesis of high-Sn content (25%) GeSn on insulator by Sn-induced crystallization of amorphous Ge by Toko, K., Oya, N., Saitoh, N., Yoshizawa, N., Suemasu, T.

“…Polycrystalline GeSn thin films are fabricated on insulating substrates at low temperatures by using Sn-induced crystallization of amorphous Ge (a-Ge). The Sn…”
Get full text

Thin-film thermoelectric generator based on polycrystalline SiGe formed by Ag-induced layer exchange by Tsuji, M., Murata, M., Yamamoto, A., Suemasu, T., Toko, K.

“…SiGe alloys are a promising material for highly reliable, human-friendly thin-film thermoelectric generators for micro-energy harvesting. However, it is…”
Get full text

Highly (111)-oriented Ge thin films on insulators formed by Al-induced crystallization by Toko, K., Kurosawa, M., Saitoh, N., Yoshizawa, N., Usami, N., Miyao, M., Suemasu, T.

“…(111)-oriented Ge thin films on insulators are essential for advanced electronics and photovoltaic applications. We investigate Al-induced crystallization of…”
Get full text

Polycrystalline thin-film transistors fabricated on high-mobility solid-phase-crystallized Ge on glass by Moto, K., Yamamoto, K., Imajo, T., Suemasu, T., Nakashima, H., Toko, K.

“…Low-temperature formation of Ge thin-film transistors (TFTs) on insulators has been widely investigated to improve the performance of Si large-scale integrated…”
Get full text

Si1–xGex anode synthesis on plastic films for flexible rechargeable batteries by Murata, H., Nozawa, K., Suzuki, T., Kado, Y., Suemasu, T., Toko, K.

“…SiGe is a promising anode material for replacing graphite in next generation thin-film batteries owing to its high theoretical charge/discharge capacity…”
Get full text

Direct synthesis of multilayer graphene on an insulator by Ni-induced layer exchange growth of amorphous carbon by Murata, H., Toko, K., Saitoh, N., Yoshizawa, N., Suemasu, T.

“…Multilayer graphene (MLG) growth on arbitrary substrates is desired for incorporating carbon wiring and heat spreaders into electronic devices. We investigated…”
Get full text

High thermoelectric performance in polycrystalline Yb3Ge5 thin films by Ishiyama, T., Ozawa, T., Saitoh, N., Yoshizawa, N., Suemasu, T., Toko, K.

“…The development of eco-friendly thin-film thermoelectric generators for microenergy harvesting applications is highly desired. Ge-based materials have recently…”
Get full text

Optical and electrical properties of semiconducting BaSi2 thin films on Si substrates grown by molecular beam epitaxy by Morita, K, Inomata, Y, Suemasu, T

“…The electrical properties and optical absorption (OA) spectra of undoped BaSi2 films grown by molecular beam epitaxy were investigated The electron density and…”
Get full text

Grain size dependent photoresponsivity in GaAs films formed on glass with Ge seed layers by Nishida, T., Igura, K., Imajo, T., Suemasu, T., Toko, K.

“…The strong correlation between grain size and photoresponsivity in polycrystalline GaAs films on glass was experimentally demonstrated using Ge seed layers…”
Get full text

High-electron-mobility (370 cm2/Vs) polycrystalline Ge on an insulator formed by As-doped solid-phase crystallization by Saito, M., Moto, K., Nishida, T., Suemasu, T., Toko, K.

“…High-electron-mobility polycrystalline Ge (poly-Ge) thin films are difficult to form because of their poor crystallinity, defect-induced acceptors and low…”
Get full text

Sb-doped crystallization of densified precursor for n-type polycrystalline Ge on an insulator with high carrier mobility by Takahara, D., Moto, K., Imajo, T., Suemasu, T., Toko, K.

“…Low-temperature synthesis of polycrystalline (poly-) Ge on insulators is a key technology to integrate Ge-CMOS into existing devices. However, Fermi level…”
Get full text

Donor and acceptor levels in impurity‐doped semiconducting BaSi2 thin films for solar‐cell application by Ajmal Khan, M., Suemasu, T.

“…Identification of donor and acceptor energy levels in BaSi2 due to the suitable impurity injection of different types is very essential for the design and…”
Get full text

High-hole mobility Si1-Ge (0.1 ≤ x ≤ 1) on an insulator formed by advanced solid-phase crystallization by Takahara, D., Yoshimine, R., Suemasu, T., Toko, K.

Get full text