Search Results - "Suda, Ryutaro"

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  1. 1

    Liquid-phase deposition of thin Si and Ge films based on ballistic hot electron incidence by Suda, Ryutaro, Yagi, Mamiko, Kojima, Akira, Mori, Nobuya, Shirakashi, Jun-ichi, Koshida, Nobuyoshi

    “…Using the reducing activity of ballistic hot electrons emitted from a nanocrystalline silicon (nc-Si) diode, it is demonstrated that thin Si and Ge films can…”
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    Journal Article
  2. 2

    Deposition of thin Si and Ge films by ballistic hot electron reduction in a solution-dripping mode and its application to the growth of thin SiGe films by Suda, Ryutaro, Yagi, Mamiko, Kojima, Akira, Mentek, Romain, Mori, Nobuya, Shirakashi, Jun-ichi, Koshida, Nobuyoshi

    Published in Japanese Journal of Applied Physics (01-04-2015)
    “…To enhance the usefulness of ballistic hot electron injection into solutions for depositing thin group-IV films, a dripping scheme is proposed. A very small…”
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    Journal Article
  3. 3

    Improved quasiballistic electron emission from a nanocrystalline Si cold cathode with a monolayer-graphene surface electrode by Kojima, Akira, Suda, Ryutaro, Koshida, Nobuyoshi

    Published in Applied physics letters (26-03-2018)
    “…The quasiballistic electron emission from a nanocrystalline porous silicon (nc-Si) diode is drastically enhanced by using a monolayer-graphene film as the…”
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    Journal Article
  4. 4

    Pseudo-Wet Plasma Mechanism Enabling High-Throughput Dry Etching of SiO 2 by Cryogenic-Assisted Surface Reactions by Hsiao, Shih-Nan, Sekine, Makoto, Britun, Nikolay, Mo, Michael K T, Imai, Yusuke, Tsutsumi, Takayoshi, Ishikawa, Kenji, Iijima, Yuki, Suda, Ryutaro, Yokoi, Masahiko, Kihara, Yoshihide, Hori, Masaru

    Published in Small methods (02-06-2024)
    “…Manufacturing semiconductor devices requires advanced patterning technologies, including reactive ion etching (RIE) based on the synergistic interactions…”
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    Journal Article
  5. 5

    Pseudo-Wet Plasma Mechanism Enabling High-Throughput Dry Etching of SiO2 by Cryogenic-Assisted Surface Reactions by Hsiao, Shih-Nan, Sekine, Makoto, Britun, Nikolay, Mo, Michael K T, Imai, Yusuke, Tsutsumi, Takayoshi, Ishikawa, Kenji, Iijima, Yuki, Suda, Ryutaro, Yokoi, Masahiko, Kihara, Yoshihide, Hori, Masaru

    Published in Small methods (02-06-2024)
    “…Manufacturing semiconductor devices requires advanced patterning technologies, including reactive ion etching (RIE) based on the synergistic interactions…”
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    Journal Article
  6. 6

    A fully customized hardware system for ultra-fast feedback-controlled electromigration using FPGA by Kanamaru, Yuma, Ando, Masazumi, Suda, Ryutaro, Shirakashi, Jun-ichi

    “…Electromigration (EM) method for the fabrication of nanogaps is specifically simple as compared with other methods because it is achieved by only passing a…”
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    Conference Proceeding
  7. 7

    Resistive switching effects in electromigrated Ni nanogaps by Takikawa, Kazuki, Suda, Ryutaro, Ito, Mitsuki, Toyonaka, Takahiro, Shirakashi, Jun-ichi

    “…Recently, resistive switches have been constructed from nanogap electrodes. We have already reported a simple method for the fabrication of nanogaps with…”
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    Conference Proceeding
  8. 8

    Electrical properties of nanogap-based single-electron transistors fabricated by field-emission-induced electromigration by Suda, Ryutaro, Akimoto, Shunsuke, Morihara, Kohei, Shirakashi, Jun-ichi

    “…We report a simple and easy method for the control of electrical characteristics of planar-type nanogap-based single-electron transistors (SETs) using…”
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    Conference Proceeding Journal Article
  9. 9

    Reduced energy-angle dispersion of output electrons from a nanocrystalline Si emitter with a monolayergraphene surface electrode by Kojima, Akira, Suda, Ryutaro, Koshida, Nobuyoshi

    “…It is shown that the angle dispersions of output electrons of nanocrystalline silicon (nc-Si) quasiballistic electron emitter are significantly reduced by…”
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    Conference Proceeding
  10. 10

    Conduction mechanism of single-electron transistors fabricated by field-emission-induced electromigration by Akimoto, S., Suda, R., Ito, M., Ando, M., Shirakashi, J.

    “…We report the conduction mechanism of the single-electron transistors (SETs) fabricated by field-emission-induced electromigration, which is so-called…”
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    Conference Proceeding Journal Article
  11. 11

    Nanoscale mechanical scratching of graphene using scanning probe microscopy by Suda, R., Saito, T., Tseng, A. A., Shirakashi, J.

    “…Nanolithography of graphene surfaces using scanning probe microscopy (SPM) scratching with a diamond-coated tip was systematically investigated. The graphene…”
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    Conference Proceeding Journal Article
  12. 12

    In-situ temperature measurements of Joule-heated graphene using near-infrared CCD imaging system by Saito, Takanari, Suda, Ryutaro, Shirakashi, Jun-ichi

    “…We report temperature distribution of graphene during Joule heating process using in-situ near-infrared (NIR) charge-coupled device (CCD) imaging system…”
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    Conference Proceeding Journal Article
  13. 13

    Tuning of resistance of nanogaps using field-emission-induced electromigration with feedback control scheme by Ando, Masazumi, Akimoto, Shunsuke, Suda, Ryutaro, Shirakashi, Jun-ichi

    “…We report a newly investigated technique for the tuning of tunnel resistance of nanogaps using electromigration phenomena induced by a field emission current,…”
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    Conference Proceeding Journal Article
  14. 14

    In-situ control of quantum point contacts using scanning probe microscopy scratch lithography by Suda, R., Ohyama, T., Tseng, A. A., Shirakashi, J.

    “…Quantum point contacts (QPCs) are formed by mechanically scratching Au channels with a scanning probe microscope (SPM) in ambient condition. A variation of…”
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    Conference Proceeding