Search Results - "Suarez Segovia, Carlos"

Effect of La and Al addition used for threshold voltage shift on the BTI reliability of HfON-based FDSOI MOSFETs by Kumar, Pushpendra, Leroux, Charles, Mohamad, Blend, Toffoli, Alain, Romano, Giovanni, Garros, Xavier, Reimbold, Gilles, Kumar, Pushpendra, Domengie, Florian, Suarez Segovia, Carlos, Kumar, Pushpendra, Mohamad, Blend, Ghibaudo, G.

“…In this paper, the Bias Temperature Instability effects of Lanthanum (La) and Aluminum (Al) incorporation, used for threshold voltage adjustment by dipole…”
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Effective work function engineering by sacrificial lanthanum diffusion on HfON-based 14 nm NFET devices by Suarez-Segovia, Carlos, Leroux, Charles, Domengie, Florian, Dabertrand, Karen, Joseph, Vincent, Romano, Giovanni, Caubet, Pierre, Zoll, Stephane, Weber, Olivier, Ghibaudo, Gerard, Reimbold, Gilles, Haond, Michel

“…In this paper, the impact of metallic lanthanum (La) deposited by Radio-Frequency PVD on effective work function (WF eff ) of HfON-based NFET devices in a…”
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