Search Results - "Su, Zhaole"

Realizing Single Chip White Light InGaN LED via Dual-Wavelength Multiple Quantum Wells by Li, Yangfeng, Liu, Cui, Zhang, Yuli, Jiang, Yang, Hu, Xiaotao, Song, Yimeng, Su, Zhaole, Jia, Haiqiang, Wang, Wenxin, Chen, Hong

“…Dual-wavelength multiple quantum wells (MQWs) have great potential in realizing high quality illumination, monolithic micro light-emitting diode (LED) displays…”
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N-polar GaN Film Epitaxy on Sapphire Substrate without Intentional Nitridation by Su, Zhaole, Li, Yangfeng, Hu, Xiaotao, Song, Yimeng, Kong, Rui, Deng, Zhen, Ma, Ziguang, Du, Chunhua, Wang, Wenxin, Jia, Haiqiang, Chen, Hong, Jiang, Yang

“…High-temperature nitridation is commonly thought of as a necessary process to obtain N-polar GaN films on a sapphire substrate. In this work, high-quality…”
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The role of AlN thickness in MOCVD growth of N-polar GaN by Li, Yangfeng, Hu, Xiaotao, Song, Yimeng, Su, Zhaole, Wang, Wenqi, Jia, Haiqiang, Wang, Wenxin, Jiang, Yang, Chen, Hong

“…•A AlN thickness of 150 nm gives a smooth surface N-polar GaN with reduced defects.•A thicker AlN changes the polarity of GaN to Ga-polar while a thinner one…”
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Effect of initial condition on the quality of GaN film and AlGaN/GaN heterojunction grown on flat sapphire substrate with ex-situ sputtered AlN by MOCVD by Su, Zhaole, Kong, Rui, Hu, Xiaotao, Song, Yimeng, Deng, Zhen, Jiang, Yang, Li, Yangfeng, Chen, Hong

“…The growth condition of initial medium (870 °C–920 °C) temperature (MT) layer is crucial to the quality of high temperature (HT) GaN layer and AlGaN/GaN…”
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Epitaxy N-polar GaN on vicinal Sapphire substrate by MOCVD by Li, Yangfeng, Hu, Xiaotao, Song, Yimeng, Su, Zhaole, Wang, Wenqi, Jia, Haiqiang, Wang, Wenxin, Jiang, Yang, Chen, Hong

“…A 1-μm thick N-polar gallium nitride (GaN) thin film has been grown on 2-inch vicinal sapphire substrate (c off 2° toward m plane) by metal organic chemical…”
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Two-Step Deposition of an Ultrathin GaN Film on a Monolayer MoS2 Template by Song, Yimeng, Li, Yangfeng, He, Yingfeng, Wei, Huiyun, Qiu, Peng, Hu, Xiaotao, Su, Zhaole, Jiang, Yang, Peng, Mingzeng, Zheng, Xinhe

“…Ultrathin gallium nitride (GaN) application can be profoundly influenced by its quality, especially the issue of amorphous interfacial layers formed on…”
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Two-Step Deposition of an Ultrathin GaN Film on a Monolayer MoS 2 Template by Song, Yimeng, Li, Yangfeng, He, Yingfeng, Wei, Huiyun, Qiu, Peng, Hu, Xiaotao, Su, Zhaole, Jiang, Yang, Peng, Mingzeng, Zheng, Xinhe

“…Ultrathin gallium nitride (GaN) application can be profoundly influenced by its quality, especially the issue of amorphous interfacial layers formed on…”
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The influence of temperature of nitridation and AlN buffer layer on N-polar GaN by Li, Yangfeng, Hu, Xiaotao, Song, Yimeng, Su, Zhaole, Jia, Haiqiang, Wang, Wenxin, Jiang, Yang, Chen, Hong

“…The influence of temperature of nitridation and AlN buffer layer growth on N-polar gallium nitride (GaN) grown on 2-in. vicinal sapphire substrate by metal…”
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Role of low temperature Al(Ga)N interlayers on the polarity and quality control of GaN epitaxy by Su, Zhaole, Li, Yangfeng, Yin, Haibo, Hai, Yu, Hu, Xiaotao, Song, Yimeng, Kong, Rui, Deng, Zhen, Ma, Ziguang, Du, Chunhua, Wang, Wenxin, Jia, Haiqiang, Wang, Dahai, Liu, Xinyu, Jiang, Yang, Chen, Hong

“…•Polarity of GaN layer with a HT AlN buffer layer grown directly on sapphire substrate is N-polar.•A low temperature AlN interlayer can invert N-polar GaN film…”
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