Search Results - "Stuyck, N. I. Dumoulin"

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  1. 1

    Large-Scale 2D Spin-Based Quantum Processor with a Bi-Linear Architecture by Mohiyaddin, F.A., Li, R., Brebels, S., Simion, G., Dumoulin Stuyck, N. I., Godfrin, C., Shehata, M., Elsayed, A., Gys, B., Kubicek, S., Jussot, J., Canvel, Y., Massar, S., Weckx, P., Matagne, P., Mongillo, M., Govoreanu, B., Radu, I. P.

    “…Here, we propose a bi-linear 2D device architecture for the demonstration of large-scale silicon-based quantum computers. Based on extensive modeling of the…”
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    Conference Proceeding
  2. 2

    A Scalable One Dimensional Silicon Qubit Array with Nanomagnets by Simion, G., Mohiyaddin, F. A., Li, R., Shehata, M., Dumoulin Stuyck, N. I., Elsayed, A., Ciubotaru, F., Kubicek, S., Jussot, J., Chan, BT, Ivanov, Ts, Godfrin, C., Spessot, A., Matagne, P., Govoreanu, B., Radu, I. P.

    “…We propose a solid scalable design and operation methodology for 1-D spin qubit arrays with nanomagnets. Each qubit in the array is independently addressable,…”
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    Conference Proceeding
  3. 3

    Comprehensive 300 mm process for Silicon spin qubits with modular integration by Elsayed, A., Godfrin, C., Dumoulin Stuyck, N.I., Shehata, M.M.K., Kubicek, S., Massar, S., Canvel, Y., Jussot, J., Hikavyy, A., Loo, R., Simion, G., Mongillo, M., Wan, D., Govoreanu, B., Li, R., Radu, I.P., Van Dorpe, P., De Greve, K.

    “…We report a comprehensive 300 mm industrial silicon spin qubit integration process for large scale quantum processors. The process was designed to be modular…”
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    Conference Proceeding
  4. 4

    Uniform Spin Qubit Devices with Tunable Coupling in an All-Silicon 300 mm Integrated Process by Stuyck, N. I. Dumoulin, Li, R., Godfrin, C., Elsayed, A., Kubicek, S., Jussot, J., Chan, B. T., Mohiyaddin, F. A., Shehata, M., Simion, G., Canvel, Y., Goux, L., Heyns, M., Govoreanu, B., Radu, I. P.

    Published in 2021 Symposium on VLSI Circuits (13-06-2021)
    “…Larger arrays of electron spin qubits require radical improvements in fabrication and device uniformity. Here we demonstrate excellent qubit device uniformity…”
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    Conference Proceeding
  5. 5

    Uniform Spin Qubit Devices in an All-Silicon 300 mm Integrated Process by Stuyck, N. I. Dumoulin, Li, R, Godfrin, C, Elsayed, A, Kubicek, S, Jussot, J, Chan, B. T, Mohiyaddin, F. A, Shehata, M, Simion, G, Canvel, Y, Goux, L, Heyns, M, Govoreanu, B, Radu, I. P

    Published 24-08-2021
    “…Larger arrays of electron spin qubits require radical improvements in fabrication and device uniformity. Here we demonstrate excellent qubit device uniformity…”
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    Journal Article
  6. 6

    Low dephasing and robust micromagnet designs for silicon spin qubits by Dumoulin Stuyck, N. I., Mohiyaddin, F. A., Li, R., Heyns, M., Govoreanu, B., Radu, I. P.

    Published in Applied physics letters (30-08-2021)
    “…Using micromagnets to enable electron spin manipulation in silicon qubits has emerged as a very popular method, enabling single-qubit gate fidelities larger…”
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    Journal Article
  7. 7
  8. 8

    Uniform Spin Qubit Devices with Tunable Coupling in an All-Silicon 300 mm Integrated Process by Dumoulin Stuyck, N. I., Li, R., Godfrin, C., Elsayed, A., Kubicek, S., Jussot, J., Chan, B. T., Mohiyaddin, F. A., Shehata, M., Simion, G., Canvel, Y., Goux, L., Heyns, M., Govoreanu, B., Radu, I. P.

    Published in 2021 Symposium on VLSI Technology (13-06-2021)
    “…Larger arrays of electron spin qubits require radical improvements in fabrication and device uniformity. Here we demonstrate excellent qubit device uniformity…”
    Get full text
    Conference Proceeding
  9. 9
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  11. 11

    Low dephasing and robust micromagnet designs for silicon spin qubits by Stuyck, N. I. Dumoulin, Mohiyaddin, F. A, Li, R, Heyns, M, Govoreanu, B, Radu, I. P

    Published 24-08-2021
    “…Using micromagnets to enable electron spin manipulation in silicon qubits has emerged as a very popular method, enabling single-qubit gate fidelities larger…”
    Get full text
    Journal Article
  12. 12

    Multiphysics Simulation & Design of Silicon Quantum Dot Qubit Devices by Mohiyaddin, F. A., Chan, BT, Ivanov, Ts, Spessot, A., Matagne, P., Lee, J., Govoreanu, B., Raduimec, I. P., Simion, G., Stuyck, N. I. Dumoulin, Li, R., Ciubotaru, F., Eneman, G., Bufler, F. M., Kubicek, S., Jussot, J.

    “…In this paper, we combine multiphysics simulation methods to assemble a comprehensive design methodology for silicon qubit devices. Key device parameters are…”
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    Conference Proceeding
  13. 13

    A flexible 300 mm integrated Si MOS platform for electron- and hole-spin qubits exploration by Li, R, Stuyck, N. I. Dumoulin, Kubicek, S, Jussot, J, Chan, B. T, Mohiyaddin, F. A, Elsayed, A, Shehata, M, Simion, G, Godfrin, C, Canvel, Y, Ivanov, Ts, Goux, L, Govoreanu, B, Radu, I. P

    Published 07-02-2021
    “…2020 IEEE International Electron Devices Meeting (IEDM 2020), 38.3.1-38.3.4 We report on a flexible 300 mm process that optimally combines optical and electron…”
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    Journal Article
  14. 14

    Moving Spins From Lab to Fab: A Silicon-Based Platform for Quantum Computing Device Technologies by Govoreanu, B., Mocuta, D., Lee, J., Radu, I.P., Kubicek, S., Jussot, J., Chan, B.T., Dumoulin-Stuyck, N.I., Mohiyaddin, F.A., Li, R., Simion, G., Ivanov, Ts

    “…We discuss the key features of a 300mm integrated Silicon MOS platform to serve as a basis for spin-qubit device exploration. The process yields structures…”
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    Conference Proceeding
  15. 15

    A flexible 300 mm integrated Si MOS platform for electron- and hole-spin qubits exploration by Li, R., Stuyck, N. I. Dumoulin, Kubicek, S., Jussot, J., Chan, B. T., Mohiyaddin, F. A., Elsayed, A., Shehata, M., Simion, G., Godfrin, C., Canvel, Y., Ivanov, Ts, Goux, L., Govoreanu, B., Radu, I. P.

    “…We report on a flexible 300 mm process that optimally combines optical and electron beam lithography to fabricate silicon spin qubits. It enables on-the-fly…”
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    Conference Proceeding