Search Results - "Stutzmann, M."

Electrolyte-gated organic field-effect transistors for sensing applications by Buth, F., Kumar, D., Stutzmann, M., Garrido, J. A.

“…We report on the electrolytic gating of α -sexithiophene thin film transistors, in which the organic semiconductor is in direct contact with an electrolyte…”
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Chemical control of the charge state of nitrogen-vacancy centers in diamond by Hauf, M. V., Grotz, B., Naydenov, B., Dankerl, M., Pezzagna, S., Meijer, J., Jelezko, F., Wrachtrup, J., Stutzmann, M., Reinhard, F., Garrido, J. A.

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Kinetics of optically excited charge carriers at the GaN surface by Winnerl, A., Pereira, R. N., Stutzmann, M.

“…In this work, we combine conductance and contact potential difference measurements in a consistent and systematic way, in steady-state and transient modes,…”
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Electronic transport in phosphorus-doped silicon nanocrystal networks by Stegner, A R, Pereira, R N, Klein, K, Lechner, R, Dietmueller, R, Brandt, M S, Stutzmann, M, Wiggers, H

“…We have investigated the role of doping and paramagnetic states on the electronic transport of networks assembled from freestanding Si nanocrystals (Si-NCs)…”
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Electroelastic hyperfine tuning of phosphorus donors in silicon by Dreher, L, Hilker, T A, Brandlmaier, A, Goennenwein, S T B, Huebl, H, Stutzmann, M, Brandt, M S

“…We demonstrate an electroelastic control of the hyperfine interaction between nuclear and electronic spins opening an alternative way to address and couple…”
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Direct in situ transmission electron microscopy observation of Al push up during early stages of the Al-induced layer exchange by Birajdar, B.I., Antesberger, T., Butz, B., Stutzmann, M., Spiecker, E.

“…The mechanism of Al transport during Al-induced layer exchange and crystallization of amorphous Si (a-Si) has been investigated by in situ and analytical…”
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The Mn3+/2+ acceptor level in group III nitrides by Graf, T., Gjukic, M., Brandt, M. S., Stutzmann, M., Ambacher, O.

“…Molecular-beam-epitaxy grown GaN:Mn and AlN:Mn layers with Mn concentrations around 1020 cm−3 were investigated by optical absorption and photoconductivity…”
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Thermal conductivity of mesoporous films measured by Raman spectroscopy by Stoib, B., Filser, S., Petermann, N., Wiggers, H., Stutzmann, M., Brandt, M. S.

“…We measure the in-plane thermal conductance of mesoporous Ge and SiGe thin films using the Raman-shift method and, based on a finite differences simulation…”
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AlxGa1-xN-A New Material System for Biosensors by Steinhoff, G., Purrucker, O., Tanaka, M., Stutzmann, M., Eickhoff, M.

“…The applicability of the group III nitride material system for the fabrication of semiconductor‐based biosensors is demonstrated. The operation of…”
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Optical properties of nanocrystalline diamond thin films by Achatz, P., Garrido, J. A., Stutzmann, M., Williams, O. A., Gruen, D. M., Kromka, A., Steinmüller, D.

“…The optical properties of nanocrystalline diamond films grown from a hydrogen-rich CH 4 ∕ H 2 gas phase by hot filament chemical vapor deposition, as well as…”
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Chemical functionalization of GaN and AlN surfaces by Baur, B., Steinhoff, G., Hernando, J., Purrucker, O., Tanaka, M., Nickel, B., Stutzmann, M., Eickhoff, M.

“…The covalent functionalization of GaN and AlN surfaces with organosilanes is demonstrated. Both octadecyltrimethoxysilane and aminopropyltriethoxysilane form…”
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Silver-induced layer exchange for the low-temperature preparation of intrinsic polycrystalline silicon films by Scholz, M., Gjukic, M., Stutzmann, M.

“…The preparation of large grained continuous polycrystalline silicon layers by metal-induced crystallization is reported. The macroscopic layer exchange of an…”
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Solution-Processed Networks of Silicon Nanocrystals: The Role of Internanocrystal Medium on Semiconducting Behavior by Pereira, R. N, Niesar, S, You, W. B, da Cunha, A. F, Erhard, N, Stegner, A. R, Wiggers, H, Willinger, M.-G, Stutzmann, M, Brandt, M. S

“…We have produced networks of surface-oxidized and hydrogen-terminated silicon nanocrystals (Si-NCs), both intrinsic and n-type doped, on flexible plastic foil…”
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Hydrogen response mechanism of Pt–GaN Schottky diodes by Schalwig, J., Müller, G., Karrer, U., Eickhoff, M., Ambacher, O., Stutzmann, M., Görgens, L., Dollinger, G.

“…Besides silicon carbide, group-III nitrides are also suitable large-band-gap semiconductor materials for high-temperature gas sensor devices. Exposing…”
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Hydrophobic interaction and charge accumulation at the diamond-electrolyte interface by Dankerl, M, Lippert, A, Birner, S, Stützel, E U, Stutzmann, M, Garrido, J A

“…The hydrophobic interaction of surfaces with water is a well-known phenomenon, but experimental evidence of its influence on biosensor devices has been…”
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Broadband electrically detected magnetic resonance using adiabatic pulses by Hrubesch, F.M., Braunbeck, G., Voss, A., Stutzmann, M., Brandt, M.S.

“…[Display omitted] •Simulation of stripline antennae for electrically detected magnetic resonance (EDMR).•mw and rf pulse generation from 4MHz to 18GHz using…”
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Solid polyelectrolyte-gated surface conductive diamond field effect transistors by Dankerl, M., Tosun, M., Stutzmann, M., Garrido, J. A.

“…Solid polyelectrolytes have been used in transistor devices to achieve gating with high capacitance. We use a solid polyethylene oxide/LiClO 4 electrolyte to…”
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Gas sensitive GaN/AlGaN-heterostructures by Schalwig, J., Müller, G., Eickhoff, M., Ambacher, O., Stutzmann, M.

“…High electron mobility transistors (HEMT) based on GaN/AlGaN-heterostructures have been fitted with catalytically active platinum (Pt) gate electrodes to…”
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Electron affinity of AlxGa1−xN(0001) surfaces by Grabowski, S. P., Schneider, M., Nienhaus, H., Mönch, W., Dimitrov, R., Ambacher, O., Stutzmann, M.

“…The electronic properties and the electron affinities of AlxGa1−xN(0001) surfaces were investigated by ultraviolet photoemission spectroscopy (UPS) over the…”
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Structural and electronic properties of ultrathin polycrystalline Si layers on glass prepared by aluminum-induced layer exchange by Antesberger, T., Jaeger, C., Scholz, M., Stutzmann, M.

“…We prepared ultrathin polycrystalline silicon layers (5–100nm) by the aluminum-induced layer exchange process. An Al/oxide/amorphous Si layer stack was…”
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