Search Results - "Stus, N.M."

InAsSbP Photodiodes for 2.6-2.8-[micro]m Wavelengths by Il'inskaya, N.D, Karandashev, S.A, Lavrov, A.A, Matveev, B.A, Remennyi, M.A, Stus, N.M, Usikova, A.A

“…Research data for photovoltaic, I-V and C-V characteristics of InAsSbP/InAs heterostructure photodiodes that operate at room temperature in the wavelength…”
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P-InAsSbP/p-InAs0.88Sb0.12/n-InAs0.88Sb0.12/n+-InAs PDs with a smooth p-n junction by Il'inskaya, N.D., Karandashev, S.A., Lavrov, A.A., Matveev, B.A., Remennyi, M.A., Stus', N.M., Usikova, A.A.

“…•Linear impurity distribution near the p-n junction.•Low unit area capacity (Co/A)77 K = 4.3 × 10−8 F × cm−2).•D4.7μm,300K∗ as high as 6.5 × 108 Jones…”
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Corrigendum to “InAsSbP/InAs0.9Sb0.1/InAs DH photodiodes ([formula omitted]0.1 = 5.2 μm, 300 K) operating in the 77–353 K temperature range” [Infrared Phys. Technol. 73 (2015) 232–237] by Brunkov, P.N., Il’inskaya, N.D., Karandashev, S.A., Lavrov, A.A., Matveev, B.A., Remennyi, M.A., Stus’, N.M., Usikova, A.A.

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InAsSbP/InAs 0.9 Sb 0.1 /InAs DH photodiodes ( λ 0.1 = 5.2 μm, 300 K) operating in the 77–353 К temperature range by Brunkov, P.N., Il’inskaya, N.D., Karandashev, S.A., Lavrov, A.A., Matveev, B.A., Remennyi, M.A., Stus’, N.M., Usikova, A.A.

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InAsSbP/InAs0.9Sb0.1/InAs DH photodiodes (λ0.1=5.2μm, 300K) operating in the 77–353К temperature range by Brunkov, P.N., Il’inskaya, N.D., Karandashev, S.A., Lavrov, A.A., Matveev, B.A., Remennyi, M.A., Stus’, N.M., Usikova, A.A.

“…Double heterostructure back-side illuminated photodiodes with a 10-μm thick InAs0.9Sb0.1 active layer have been fabricated, studied and characterized in the…”
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Photodiode 1 x 64 linear array based on a double p-InAsSbP/n-In[As.sub.0.92][Sb.sub.0.08]/[n.sup.+]-InAs heterostructure by Il'inskaya, N.D, Karandashev, S.A, Karpukhina, N.G, Lavrov, A.A, Matveev, B.A, Remennyi, M.A, Stus, N.M, Usikova, A.A

“…The results of studies of the current-voltage characteristics and of the photoelectric and luminescence properties of a monolithic diode 1 x 64 linear array…”
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P-InAsSbP/n-InAs single heterostructure back-side illuminated 8×8 photodiode array by Brunkov, P.N., Il’inskaya, N.D., Karandashev, S.A., Lavrov, A.A., Matveev, B.A., Remennyi, M.A., Stus’, N.M., Usikova, A.A.

“…•BLIP regime starting from 190K at 3μm.•Capacitance as small as 1.3×10−7Fcm−2, 80K.•Good uniformity of diode parameters in 8×8 PD matrix…”
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Photoacoustic gas detection using a cantilever microphone and III–V mid-IR LEDs by Kuusela, T., Peura, J., Matveev, B.A., Remennyy, M.A., Stus’, N.M.

“…The cantilever enhanced photoacoustic trace gas detection in the mid-infrared 3–7 μm wavelength range has been combined with light emitting diode (LED)…”
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Spatial redistribution of radiation in flip-chip photodiodes based on InAsSbP/InAs double heterostructures by Zakgeim, A. L., Il’inskaya, N. D., Karandashev, S. A., Lavrov, A. A., Matveev, B. A., Remennyy, M. A., Stus’, N. M., Usikova, A. A., Cherniakov, A. E.

“…The spatial distribution of equilibrium and nonequilibrium (including luminescent) IR (infrared) radiation in flip-chip photodiodes based on InAsSbP/InAs…”
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Low dark current P-InAsSbP/n-InAs/N-InAsSbP/n+-InAs double heterostructure back-side illuminated photodiodes by Brunkov, P.N., Il’inskaya, N.D., Karandashev, S.A., Karpukhina, N.G., Lavrov, A.A., Matveev, B.A., Remennyi, M.A., Stus’, N.M., Usikova, A.A.

“…•Lowest capacitance of InAs heterojunction PD.•Fast response.•High detectivity in the 3μm range.•BLIP operation at 150K at 3μm.•Flip-chip design…”
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P-InAsSbP/[n.sup.0]-InAs/[n.sup.+]-InAs photodiodes for operation at moderate cooling by Brunkov, P.N, Il'inskaya, N.D, Karandashev, S.A, Latnikova, N.M, Lavrov, A.A, Matveev, B.A, Petrov, A.S, Remennyi, M.A, Sevostyanov, E.N, Stus, N.M

“…InAs single hetero structure photodiodes were considered as alternatives to cooled CdHgTe-based detectors sensitive to radiation around 3 pm spectral region in…”
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Nonuniformity in the spatial distribution of negative luminescence in InAsSb by Karandashev, S.A, Matveev, B.A, Mzhelskii, I.V, Polovinkin, V.G, Remennyi, M.A, Rybalchenko, A. Yu, Stus, N.M

“…The spatial nonuniformity of negative luminescence and current crowding in InAsSb(P) mid-IR photodiodes is analyzed in relation to the applied voltage and…”
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Current-voltage characteristics and photocurrent collection in radially symmetric front-surface-illuminated InAsSb(P) photodiodes by Karandashev, S. A., Matveev, B. A., Ratushnyi, V. I., Remennyi, M. A., Rybal’chenko, A. Yu, Stus’, N. M.

“…The I–V characteristics of front-surface-illuminated InAsSb(P) photodiodes are simulated in terms of a simple model that takes into account the radial…”
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Cooled P-InAsSbP/n-InAs/N-InAsSbP double heterostructure photodiodes by Brunkov, P.N., Il'inskaya, N.D., Karandashev, S.A., Lavrov, A.A., Matveev, B.A., Remennyi, M.A., Stus', N.M., Usikova, A.A.

“…•We tested for the first time InAs double heterostructure photodiodes at low temperatures.•InAs DH photodiodes exhibited superior performance compared to any…”
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Spatial nonuniformity of current flow and its consideration in determination of characteristics of surface illuminated InAsSbP/InAs-based photodiodes by Zotova, N. V., Karandashev, S. A., Matveev, B. A., Remennyy, M. A., Rybal’chenko, A. Yu, Stus’, N. M.

“…Current-voltage characteristics of surface-irradiated photodiodes based on the InAsSbP/InAs structures are analyzed using experimental data on the distribution…”
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Front surface illuminated InAsSb photodiodes (long-wavelength cutoff λ0.1 = 4.5 μm) operating at temperatures of 25–80°C by Il’inskaya, N. D., Zakgeim, A. L., Karandashev, S. A., Matveev, B. A., Ratushnyi, V. I., Remennyy, M. A., Rybal’chenko, A. Yu, Stus’, N. M., Chernyakov, A. E.

“…The current-voltage characteristics and temperature dependences of zero-bias dynamic resistance are analyzed for InAsSb photodiodes, with consideration for…”
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Low voltage episide down bonded mid-IR diode optopairs for gas sensing in the 3.3–4.3 μm spectral range by Remennyi, M.A., Zotova, N.V., Karandashev, S.A., Matveev, B.A., Stus’, N.M., Talalakin, G.N.

“…We describe “flip chip bonded” In(Ga)As and InAsSb heterostructure photodiodes and light emitting diodes (LEDs) ( λ=3.3–4.3 μm) grown onto n-InAs substrate…”
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Mid-infrared (3-5 μm) LEDs as sources for gas and liquid sensors by Matveev, B.A., Gavrilov, G.A., Evstropov, V.V., Zotova, N.V., Karandashov, S.A., Sotnikova, G.Yu, Stus', N.M., Talalakin, G.N., Malinen, J.

“…Mid-infrared LEDs based on InGaAs, InAsSb(P) and InGaAsSb alloys with an emission band of 0.3–0.5 μm, output power in the 10–50 μW range and long-term…”
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Midwave (3–4 μm) InAsSbP/InGaAsSb infrared diode lasers as a source for gas sensors by Aidaraliev, M., Zotova, N.V., Karandashov, S.A., Matveev, B.A., Stus', N.M., Talalakin, G.N.

“…Double heterostructure InAsSbP/In 1− x Ga x As 1− y Sb y diode lasers emitting at 3.05–3.6 μm have been fabricated by liquid phase epitaxy. These devices…”
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Tunable mid-IR diode lasers based on InGaAsSb/InAsSbP DH by Zotova, N.V., Karan-ov, S.A., Matveev, B.A., Stus', N.M., Talalakin, G.N., Remennyi, M.A.

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