Search Results - "Stuchliková, T. H."

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  1. 1

    Formation and study of p–i–n structures based on two-phase hydrogenated silicon with a germanium layer in the i-type region by Krivyakin, G. K., Volodin, V. A., Shklyaev, A. A., Mortet, V., More-Chevalier, J., Ashcheulov, P., Remes, Z., Stuchliková, T. H., Stuchlik, J.

    Published in Semiconductors (Woodbury, N.Y.) (01-10-2017)
    “…Four pairs of p–i–n structures based on polymorphous Si:H ( pm -Si:H) are fabricated by the method of plasma-enhanced chemical vapor deposition. The structures…”
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    Journal Article
  2. 2

    The optical absorption of metal nanoparticles deposited on ZnO films by Remes, Z., Kromka, A., Vanecek, M., Babcenko, O., Stuchlikova, T.-H., Cervenka, J., Hruska, K., Trung, T. Q.

    “…We present the optical absorption spectra of metal nanoparticles prepared by thermal annealing of the ultra thin metal films evaporated on polycrystalline ZnO…”
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    Journal Article Conference Proceeding
  3. 3

    Raman scattering in boron doped nanocrystalline diamond films: Manifestation of Fano interference and phonon confinement effect by Volodin, V.A., Mortet, V., Taylor, A., Remes, Z., Stuchliková, T.H., Stuchlik, J.

    Published in Solid state communications (01-08-2018)
    “…Heavily boron doped nanocrystalline diamond films grown on glass substrates by the method of plasma-chemical deposition, were investigated using Raman…”
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    Journal Article
  4. 4

    Electrical and optical characteristics of boron doped nanocrystalline diamond films by Stuchliková, T.H., Remes, Z., Mortet, V., Taylor, A., Ashcheulov, P., Stuchlik, J., Volodin, V.A.

    Published in Vacuum (01-10-2019)
    “…Boron doped diamond is a prospective material which can be used as a conductive and optically transparent thin-film electrode in a variety of optoelectronic…”
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    Journal Article
  5. 5

    Optical properties of p–i–n structures based on amorphous hydrogenated silicon with silicon nanocrystals formed via nanosecond laser annealing by Krivyakin, G. K., Volodin, V. A., Kochubei, S. A., Kamaev, G. N., Purkrt, A., Remes, Z., Fajgar, R., Stuchliková, T. H., Stuchlik, J.

    Published in Semiconductors (Woodbury, N.Y.) (01-07-2016)
    “…Silicon nanocrystals are formed in the i layers of p–i–n structures based on a -Si:H using pulsed laser annealing. An excimer XeCl laser with a wavelength of…”
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    Journal Article
  6. 6

    Electroluminescence of silicon nanocrystals in p–i–n diode structures by Fojtik, A., Valenta, J., Stuchlíková, The Ha, Stuchlík, J., Pelant, I., Kočka, J.

    Published in Thin solid films (25-10-2006)
    “…A new method of fabrication of nanocrystalline silicon-based light-emitting-devices is introduced. Si nanocrystals are derived from combustion or pyrolysis of…”
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    Journal Article Conference Proceeding