Search Results - "Stuchlíková, Ľubica"

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  1. 1

    Characterization and evaluation of current transport properties of power SiC Schottky diode by Chvála, Aleš, Marek, Juraj, Drobný, Jakub, Stuchlíková, Ľubica, Alberto Messina, Angelo, Vinciguerra, Vincenzo, Donoval, Daniel

    Published in Materials today : proceedings (01-01-2022)
    “…This paper presents the characterization and evaluation of current transport properties of power SiC Schottky diode. The evaluation of the main Schottky diode…”
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    Journal Article
  2. 2

    Capacitance study of carrier inversion at the amorphous/crystalline silicon heterojunction passivated by different thicknesses of i-layer by MIKOLASEK, Miroslav, STUCHLIKOVA, Lubica, HARMATHA, Ladislav, VINCZE, Andrej, NEMEC, Michal, RACKO, Juraj, BREZA, Juraj

    Published in Applied surface science (01-09-2014)
    “…The paper deals with the diagnostics of structures containing a heterojunction of amorphous and crystalline silicon representing the key part of the silicon…”
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    Journal Article
  3. 3

    Capacitance properties and simulation of the AlGaN/GaN Schottky heterostructure by HARMATHA, Ladislav, STUCHLIKOVA, Lubica, RACKO, Juraj, MAREK, Juraj, PECHACEK, Juraj, BENKO, Peter, NEMEC, Michal, BREZA, Juraj

    Published in Applied surface science (01-09-2014)
    “…The paper presents the results of capacitance measurements on GaN/AlGaN/GaN Schottky heterostructures grown on an Al2O3 substrate by Low-Pressure Metal-Organic…”
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    Journal Article
  4. 4

    Electrical characterization of the AIIIBV-N heterostructures by capacitance methods by Stuchlíková, Ľubica, Harmatha, Ladislav, Petrus, Miroslav, Rybár, Jakub, Šebok, Ján, Ściana, Beata, Radziewicz, Damian, Pucicki, Damian, Tłaczała, Marek, Kósa, Arpád, Benko, Peter, Kováč, Jaroslav, Juhász, Peter

    Published in Applied surface science (15-03-2013)
    “…► Three MQW InGaAsN/GaAs heterostructures with various nitrogen ratios were compared. ► CV method and Deep Level Transient Spectroscopy measurements were used…”
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    Journal Article
  5. 5

    SiC Power TrenchMOS Transistor under harsh repetitive switching conditions by Marek, Juraj, Minarik, Michal, Matus, Matej, Kozarik, Jozef, Stuchlikova, Lubica

    “…We investigate the reliability of 1.2kV 4H-SiC MOSFETs under repeated unclamped inductive switching (UIS) and short-circuit I and II conditions. The stress…”
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    Conference Proceeding
  6. 6

    The Influence of Repetitive UIS on Electrical Properties of Advanced Automotive Power Transistors by Marek, Juraj, Kozarik, Jozef, Minarik, Michal, Chvala, Ales, Stuchlikova, Lubica

    “…This paper investigates a degradation of three types of automotive power MOSFETs through repetitive Unclamped Inductive Switching (UIS) test typically used to…”
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    Journal Article
  7. 7

    Charge injection and transport properties of an organic light-emitting diode by Juhasz, Peter, Nevrela, Juraj, Micjan, Michal, Novota, Miroslav, Uhrik, Jan, Stuchlikova, Lubica, Jakabovic, Jan, Harmatha, Ladislav, Weis, Martin

    “…The charge behavior of organic light emitting diode (OLED) is investigated by steady-state current-voltage technique and impedance spectroscopy at various…”
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    Journal Article
  8. 8

    Impact of repetitive UIS on modern GaN power devices by Marek, Juraj, Stuchlikova, Lubica, Jagelka, Martin, Chvala, Ales, Pribytny, Patrik, Donoval, Martin, Donoval, Daniel

    “…In this paper we present the results from repetitive Unclamped Inductive Switching - UIS measurements on power GaN HEMTs. Experimental analysis was performed…”
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    Conference Proceeding
  9. 9

    Study of repetitive avalanche stress invoked degradation of electrical properties of DMOS and TrenchMOS transistors by Marek, Juraj, Stuchlikova, Lubica, Jagelka, Martin, Chvala, Ales, Pribytny, Patrik, Donoval, Martin, Donoval, Daniel

    “…An electrical ageing of three power MOS transistor types has been performed in order to investigate the gradual degradation in time (number of stress pulses)…”
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    Conference Proceeding
  10. 10

    Composition Related Electrical Active Defect States of InGaAs and GaAsN by Kosa, Arpad, Stuchlikova, Lubica, Harmatha, Ladislav, Kovac, Jaroslav, Sciana, Beata, Dawidowski, Wojciech, Tlaczala, Marek

    “…This paper discusses results of electrically active defect states - deep energy level analysis in InGaAs and GaAsN undoped semiconductor structures grown for…”
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    Journal Article
  11. 11

    Interactive animation as a motivation tool by Stuchlíková, Lubica, Kósa, Arpád, Jakuš, Juraj, Šušoliak, Michal, Donoval, Daniel, Hrbácek, Jiri

    “…This article highlights the practical experiences acquired in design, realization and implementation of interactive animations for students, located at "eLearn…”
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    Conference Proceeding
  12. 12

    Charge Trap States of SiC Power TrenchMOS Transistor under Repetitive Unclamped Inductive Switching Stress by Marek, Juraj, Kozarik, Jozef, Minarik, Michal, Chvála, Aleš, Matus, Matej, Donoval, Martin, Stuchlikova, Lubica, Weis, Martin

    Published in Materials (19-11-2022)
    “…Silicon carbide (SiC) has been envisioned as an almost ideal material for power electronic devices; however, device reliability is still a great challenge…”
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    Journal Article
  13. 13

    Evaluation of Effective Mass in InGaAsN/GaAs Quantum Wells Using Transient Spectroscopy by Stuchlikova, Lubica, Sciana, Beata, Kosa, Arpad, Matus, Matej, Benko, Peter, Marek, Juraj, Donoval, Martin, Dawidowski, Wojciech, Radziewicz, Damian, Weis, Martin

    Published in Materials (30-10-2022)
    “…Transient spectroscopies are sensitive to charge carriers released from trapping centres in semiconducting devices. Even though these spectroscopies are mostly…”
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    Journal Article
  14. 14

    Massive open online courses in microelectronics education by Stuchlikova, Lubica, Kosa, Arpad, Benko, Peter, Donoval, Daniel

    “…A massive open online course (MOOC) is a model for delivering learning content online with no limit on attendance to any person who expresses interest. This…”
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    Conference Proceeding
  15. 15

    Characterization of Unipolar Power Devices Technology by Harmatha, Ladislav, Tapajna, Milan, Pisecny, Pavol, Stuchlikova, Lubica, Donoval, Daniel

    “…The quality of momentus technological steps in unipolar power devices manufactoring was examine by means of capacitance and current measurements using a…”
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    Journal Article
  16. 16

    Characterization of High Energy Irradiated MOS Structures Using the Capacitance Methods by Pisecny, Pavol, Stuchlikova, Lubica, Harmatha, Ladislav, Tapajna, Milan, Csabay, Otto

    “…The formation and annealing of radiation-induced defects in MOS structures exposed to 710 MeV Bi ions and 305 MeV Kr ions radiation with a fluency of 10^9 and…”
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    Journal Article
  17. 17

    DLTS study of InGaAs and GaAsN structures with different indium and nitrogen compositions by Kosa, Arpad, Stuchlikova, Lubica, Harmatha, Ladislav, Kovac, Jaroslav, Sciana, Beata, Dawidowski, Wojciech, Tlaczala, Marek

    “…In this article Deep Level Transient Fourier Spectroscopy experiments and various evaluation procedures were used to study emission and capture processes of…”
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    Journal Article
  18. 18

    Power MOSFET interactive e-learning course by Marek, Juraj, Stuchlikova, Lubica, Donoval, Daniel, Benko, Peter, Chvala, Ales, Molnar, Marian

    “…This paper shows author's motivation and experience in design and realization of interactive e-learning course "Power MOSFET". The course deals with the basic…”
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    Conference Proceeding
  19. 19

    Electrical characterization of 4H‐SiC Schottky diodes with RuWO x Schottky contacts before and after irradiation by fast electrons by Benkovska, Jana, Stuchlikova, Lubica, Buc, Dalibor, Čaplovic, Lubomir

    “…The impact of radiation damage on the device performance of 4H‐SiC Schottky barrier diodes (SBDs) with RuWO x Schottky contacts, which were irradiated at room…”
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    Journal Article
  20. 20

    Characterization of charge traps in pentacene diodes by electrical methods by Juhasz, Peter, Vary, Michal, Stuchlikova, Lubica, Harmatha, Ladislav, Jakabovic, Jan, Weis, Martin

    Published in Organic electronics (01-02-2015)
    “…[Display omitted] •The steady-state current–voltage measurement shows bottleneck only.•The impedance spectroscopy provides the major relaxations.•The transient…”
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    Journal Article