Search Results - "Stuchlíková, Ľubica"
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Characterization and evaluation of current transport properties of power SiC Schottky diode
Published in Materials today : proceedings (01-01-2022)“…This paper presents the characterization and evaluation of current transport properties of power SiC Schottky diode. The evaluation of the main Schottky diode…”
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2
Capacitance study of carrier inversion at the amorphous/crystalline silicon heterojunction passivated by different thicknesses of i-layer
Published in Applied surface science (01-09-2014)“…The paper deals with the diagnostics of structures containing a heterojunction of amorphous and crystalline silicon representing the key part of the silicon…”
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3
Capacitance properties and simulation of the AlGaN/GaN Schottky heterostructure
Published in Applied surface science (01-09-2014)“…The paper presents the results of capacitance measurements on GaN/AlGaN/GaN Schottky heterostructures grown on an Al2O3 substrate by Low-Pressure Metal-Organic…”
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4
Electrical characterization of the AIIIBV-N heterostructures by capacitance methods
Published in Applied surface science (15-03-2013)“…► Three MQW InGaAsN/GaAs heterostructures with various nitrogen ratios were compared. ► CV method and Deep Level Transient Spectroscopy measurements were used…”
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5
SiC Power TrenchMOS Transistor under harsh repetitive switching conditions
Published in 2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe) (04-09-2023)“…We investigate the reliability of 1.2kV 4H-SiC MOSFETs under repeated unclamped inductive switching (UIS) and short-circuit I and II conditions. The stress…”
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Conference Proceeding -
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The Influence of Repetitive UIS on Electrical Properties of Advanced Automotive Power Transistors
Published in Advances in electrical and electronic engineering (01-03-2022)“…This paper investigates a degradation of three types of automotive power MOSFETs through repetitive Unclamped Inductive Switching (UIS) test typically used to…”
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7
Charge injection and transport properties of an organic light-emitting diode
Published in Beilstein journal of nanotechnology (2016)“…The charge behavior of organic light emitting diode (OLED) is investigated by steady-state current-voltage technique and impedance spectroscopy at various…”
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Impact of repetitive UIS on modern GaN power devices
Published in 2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) (01-11-2016)“…In this paper we present the results from repetitive Unclamped Inductive Switching - UIS measurements on power GaN HEMTs. Experimental analysis was performed…”
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Conference Proceeding -
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Study of repetitive avalanche stress invoked degradation of electrical properties of DMOS and TrenchMOS transistors
Published in 2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) (01-11-2016)“…An electrical ageing of three power MOS transistor types has been performed in order to investigate the gradual degradation in time (number of stress pulses)…”
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Conference Proceeding -
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Composition Related Electrical Active Defect States of InGaAs and GaAsN
Published in Advances in electrical and electronic engineering (01-03-2017)“…This paper discusses results of electrically active defect states - deep energy level analysis in InGaAs and GaAsN undoped semiconductor structures grown for…”
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Interactive animation as a motivation tool
Published in 10th European Workshop on Microelectronics Education (EWME) (01-05-2014)“…This article highlights the practical experiences acquired in design, realization and implementation of interactive animations for students, located at "eLearn…”
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Conference Proceeding -
12
Charge Trap States of SiC Power TrenchMOS Transistor under Repetitive Unclamped Inductive Switching Stress
Published in Materials (19-11-2022)“…Silicon carbide (SiC) has been envisioned as an almost ideal material for power electronic devices; however, device reliability is still a great challenge…”
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13
Evaluation of Effective Mass in InGaAsN/GaAs Quantum Wells Using Transient Spectroscopy
Published in Materials (30-10-2022)“…Transient spectroscopies are sensitive to charge carriers released from trapping centres in semiconducting devices. Even though these spectroscopies are mostly…”
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14
Massive open online courses in microelectronics education
Published in 10th European Workshop on Microelectronics Education (EWME) (01-05-2014)“…A massive open online course (MOOC) is a model for delivering learning content online with no limit on attendance to any person who expresses interest. This…”
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Conference Proceeding -
15
Characterization of Unipolar Power Devices Technology
Published in Advances in electrical and electronic engineering (01-06-2004)“…The quality of momentus technological steps in unipolar power devices manufactoring was examine by means of capacitance and current measurements using a…”
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Characterization of High Energy Irradiated MOS Structures Using the Capacitance Methods
Published in Advances in electrical and electronic engineering (01-06-2004)“…The formation and annealing of radiation-induced defects in MOS structures exposed to 710 MeV Bi ions and 305 MeV Kr ions radiation with a fluency of 10^9 and…”
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17
DLTS study of InGaAs and GaAsN structures with different indium and nitrogen compositions
Published in Materials science in semiconductor processing (01-02-2018)“…In this article Deep Level Transient Fourier Spectroscopy experiments and various evaluation procedures were used to study emission and capture processes of…”
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18
Power MOSFET interactive e-learning course
Published in 10th European Workshop on Microelectronics Education (EWME) (01-05-2014)“…This paper shows author's motivation and experience in design and realization of interactive e-learning course "Power MOSFET". The course deals with the basic…”
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Conference Proceeding -
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Electrical characterization of 4H‐SiC Schottky diodes with RuWO x Schottky contacts before and after irradiation by fast electrons
Published in Physica status solidi. A, Applications and materials science (01-07-2012)“…The impact of radiation damage on the device performance of 4H‐SiC Schottky barrier diodes (SBDs) with RuWO x Schottky contacts, which were irradiated at room…”
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Characterization of charge traps in pentacene diodes by electrical methods
Published in Organic electronics (01-02-2015)“…[Display omitted] •The steady-state current–voltage measurement shows bottleneck only.•The impedance spectroscopy provides the major relaxations.•The transient…”
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