Search Results - "Stricker, Andreas D."

Electron and hole mobility in silicon at large operating temperatures - Part I: Bulk mobility by Reggiani, Susanna, Valdinoci, Marina, Colalongo, Luigi, Rudan, Massimo, Baccarani, Giorgio, Stricker, Andreas D, Illien, Fridolin, Felber, Norbert, Fichtner, Wolfgang, Zullino, Lucia

“…In this paper, an experimental investigation on high-temperature carrier mobility in bulk silicon is carried out with the aim of improving our qualitative and…”
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Design and optimization of a 200 GHz SiGe HBT collector profile by TCAD by Stricker, Andreas D., Johnson, Jeffrey B., Freeman, Greg, Rieh, Jae-Sung

“…A novel simulation assisted investigation was used to obtain the optimum collector design of a 200 GHz silicon–germanium (SiGe) hetero junction bipolar…”
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Characterization and optimization of a bipolar ESD-device by measurements and simulations by Stricker, Andreas D., Mettler, Stephan, Wolf, Heinrich, Mergens, Markus, Wilkening, Wolfgang, Gieser, Horst, Fichtner, Wolfgang

“…The design of ESD (electro-static discharge) protection structures can be significantly shortened by using thermo-electrical device simulations. In many cases…”
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Transistor design and application considerations for >200-GHz SiGe HBTs by Freeman, G., Jagannathan, B., Shwu-Jen Jeng, Jae-Sung Rieh, Stricker, A.D., Ahlgren, D.C., Subbanna, S.

“…SiGe HBT transistors achieving over 200 GHz f/sub T/ and f/sub MAX/ are demonstrated in this paper. Techniques and trends in SiGe HBT design are discussed…”
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Evaluating and designing the optimal 2D collector profile for a 300GHz SiGe HBT by Stricker, Andreas D., Freeman, Gregory, Khater, Marwan, Rieh, Jae-Sung

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Evaluating and designing the optimal 2D collector profile for a 300 GHz SiGe HBT by Stricker, Andreas D., Freeman, Gregory, Khater, Marwan, Rieh, Jae-Sung

“…An optimally designed selectively implanted collector (SIC) doping profile allows keeping a SiGe-HBT's current in a vertical flow under the emitter while…”
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Improved vertical PNP collector-base breakdown using 2D Monte-Carlo TCAD simulations by Stricker, A.D., Voegeli, B.T., Feilchenfeld, N.B., Rainey, B.A., Gautsch, M.L.

“…Using TCAD simulations the collector-base break down voltage (BVcbo) of a vertical PNP transistor implemented in IBM's 0.18 /spl mu/m BiCMOS SiGe 7WL…”
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