Search Results - "Strand, Jack"

On the Structure of Oxygen Deficient Amorphous Oxide Films by Strand, Jack, Shluger, Alexander L.

“…Understanding defects in amorphous oxide films and heterostructures is vital to improving performance of microelectronic devices, thin‐film transistors, and…”
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Mechanisms of Oxygen Vacancy Aggregation in SiO2 and HfO2 by Gao, David Z., Strand, Jack, Munde, Manveer S., Shluger, Alexander L.

“…Dielectric oxide films in electronic devices undergo significant structural changes during device operation under bias. These changes are usually attributed to…”
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Defect creation in amorphous HfO2 facilitated by hole and electron injection by Strand, Jack, Kaviani, Moloud, Shluger, Alexander L.

“…Using Density Functional Theory (DFT) calculations we modeled the mechanisms of formation of oxygen vacancies and interstitial ions in amorphous HfO2 under…”
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Correlated Defect Creation in HfO2 films by Strand, Jack, Shluger, Alexander

“…Spatially correlated defect generation process has been proposed to be responsible for TDDB Weibull slope measured in HfO 2 . We investigated possible…”
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Hole trapping in amorphous HfO2 and Al2O3 as a source of positive charging by Strand, Jack, Dicks, Oliver A., Kaviani, Moloud, Shluger, Alexander L.

“…Density Functional Theory (DFT) calculations demonstrate that holes can trap in crystalline and amorphous HfO2 and Al2O3 in both single- and bipolaron states…”
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Defect creation in amorphous HfO^sub 2^ facilitated by hole and electron injection by Strand, Jack, Kaviani, Moloud, Shluger, Alexander L

“…Using Density Functional Theory (DFT) calculations we modeled the mechanisms of formation of oxygen vacancies and interstitial ions in amorphous HfO2 under…”
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Author Correction: Dielectric breakdown of oxide films in electronic devices by Padovani, Andrea, La Torraca, Paolo, Strand, Jack, Larcher, Luca, Shluger, Alexander L.

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Dielectric breakdown of oxide films in electronic devices by Padovani, Andrea, La Torraca, Paolo, Strand, Jack, Larcher, Luca, Shluger, Alexander L.

“…Dielectric breakdown is a sudden and catastrophic increase in the conductivity of an insulator caused by electrical stress. It is one of the major reliability…”
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Hole trapping in amorphous HfO^sub 2^ and Al^sub 2^O^sub 3^ as a source of positive charging by Strand, Jack, Dicks, Oliver A, Kaviani, Moloud, Shluger, Alexander L

“…Density Functional Theory (DFT) calculations demonstrate that holes can trap in crystalline and amorphous HfO2 and Al2O3 in both single- and bipolaron states…”
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Modeling Degradation and Breakdown in SiO2 and High-k Gate Dielectrics by Padovani, Andrea, Torraca, Paolo La, Larcher, Luca, Strand, Jack, Shluger, Alexander

“…We present a multiscale device simulation framework for modeling degradation and breakdown (BD) of gate dielectric stacks. It relies on an accurate,…”
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Towards a Universal Model of Dielectric Breakdown by Padovani, Andrea, Torraca, Paolo La, Strand, Jack, Shluger, Alexander, Milo, Valerio, Larcher, Luca

“…We present a microscopic breakdown (BD) model in which chemical bonds are weakened by carrier injection and trapping into pre-existing structural defects…”
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Variability sources and reliability of 3D - FeFETs by Pesic, Milan, Beltrando, Bastien, Padovani, Andrea, Gangopadhyay, Shruba, Kaliappan, Muthukumar, Haverty, Michael, Villena, Marco A., Piccinini, Enrico, Bertocchi, Matteo, Chiang, Tony, Larcher, Luca, Strand, Jack, Shluger, Alexander L.

“…Discovery of ferroelectricity (FE) in binary oxides enables the advent of FE memories and a plethora of novel CMOS compatible building blocks spanning from the…”
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Structure and mechanisms of formation of point defects in HfO₂, MgO and hexagonal boron nitride by Strand, Jack William

“…In this thesis, density functional theory (DFT) methods are used to model a range of defects and defect processes in three functional dielectric materials:…”
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First principles study on the segregation of metallic solutes and non-metallic impurities in Cu grain boundary by Fotopoulos, Vasileios, Strand, Jack, Petersmann, Manuel, Shluger, Alexander L

“…In: TMS 2024 153rd Annual Meeting & Exhibition Supplemental Proceedings. TMS 2024. The Minerals, Metals & Materials Series. Springer, Cham Metallic dopants…”
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Variability and disturb sources in ferroelectric 3D NANDs and comparison to Charge-Trap equivalents by Pesic, Milan, Padovani, Andrea, Rollo, Tommaso, Beltrando, Bastien, Strand, Jack, Agrawal, Parnika, Shluger, Alexander, Larcher, Luca

“…We investigate physical mechanisms driving the retention and disturb of charge-trap (CT) based and ferroelectric-(FE) based 3D NAND string. Combining a…”
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