Search Results - "Stoykov, A. V"

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  1. 1

    Behavior of shallow acceptor impurities in uniaxially stressed silicon and in synthetic diamond studied by μ - SR by Mamedov, T.N., Andreika, D., Baturin, A.S., Herlach, D., Gorelkin, V.N., Gritsaj, K.I., Ralchenko, V.G., Stoykov, A.V., Zhukov, V.A., Zimmermann, U.

    Published in Physica. B, Condensed matter (31-03-2006)
    “…The results of investigating the behavior of the boron impurity in synthetic diamond and the effect of uniaxial static pressure on the aluminum acceptor in…”
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    Journal Article
  2. 2

    Muonium in synthetic diamond by Mamedov, T.N., Baturin, A.S., Blank, V.D., Gritsaj, K.I., Kuznetsov, M.S., Nosukhin, S.A., Ralchenko, V.G., Scheuermann, R., Stoykov, A.V., Terentiev, S.A.

    Published in Diamond and related materials (01-01-2013)
    “…Behavior of the muonium in two polycrystalline CVD diamond samples and in the sample composed of few single-crystal synthetic diamonds was studied by…”
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    Journal Article
  3. 3

    Shallow acceptor impurities in diamond-like semiconductors studied by polarized negative muons by Mamedov, T.N., Gorelkin, V.N., Gritsaj, K.I., Herlach, D., Stoykov, A.V., Zimmermann, U.

    Published in Physica. B, Condensed matter (15-04-2009)
    “…The results of μ SR study of the behavior of shallow acceptor centers (AC) in diamond, silicon, and germanium are presented. It was found that the muonic atom,…”
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    Journal Article
  4. 4

    Behaviour of a muonic atom as an acceptor centre in diamond by Mamedov, T. N, Baturin, A. S, Gritsaj, K. I, Maisuradze, A, Ralchenko, V. G, Scheuermann, R, Sedlak, K, Stoykov, A. V

    Published 24-05-2013
    “…Polarized negative muons were used to study the behaviour of the boron acceptor centre in synthetic diamond produced by the chemical vapour deposition (CVD)…”
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    Journal Article
  5. 5

    μ −SR investigations in silicon by Mamedov, T.N., Gritsaj, K.I., Stoykov, A.V., Andrianov, D.G., Gorelkin, V.N., Herlach, D., Zimmermann, U., Kormann, O., Major, J., Schefzik, M.

    Published in Physica. B, Condensed matter (01-08-2000)
    “…Results on the temperature dependence of the residual polarization of negative muons in silicon with phosphorus ( 4.5×10 18, 2.3×10 15 , and 3.2×10 12 cm −3 )…”
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  6. 6

    Relaxation of the shallow acceptor center in germanium by Mamedov, T. N., Baturin, A. S., Duginov, V. N., Gritsaj, K. I., Khasanov, R., Maisuradze, A., Stoykov, A. V.

    Published in JETP letters (01-08-2012)
    “…Polarized negative muons were used to study relaxation mechanisms of shallow acceptors in germanium. In p -type germanium at low temperatures relaxation of the…”
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    Journal Article
  7. 7

    μSR-spectrometer on the surface muon beam of the JINR phasotron by Mamedov, T.N, Duginov, V.N, Grebinnik, V.G, Gritsaj, K.I, Gustov, S.A, Mirokhin, I.V, Olshevsky, V.G, Stoykov, A.V, Zhukov, V.A

    Published in Physica. B, Condensed matter (01-08-2000)
    “…The μSR spectrometer installed on the surface muon beam of the JINR phasotron is described. The possibility of using the surface muon beam with high…”
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    Journal Article
  8. 8
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    Non-equilibrium charge carrier dynamics in synthetic diamond studied by the μSR-method by Mamedov, T.N., Baturin, A.S., Blank, V.D., Herlach, D., Gorelkin, V.N., Gritsaj, K.I., Kuznetsov, M.S., Nosukhin, S.A., Ralchenko, V.G., Stoykov, A.V., Terentiev, S.A., Zhukov, V.A., Zimmermann, U.

    Published in Diamond and related materials (01-07-2008)
    “…Polarized negative muons were used to study the dynamics of non-equilibrium charge carriers in diamond. From the behavior of the muon polarization it is…”
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    Journal Article
  10. 10

    Non-equilibrium charge carrier dynamics in synthetic diamond studied by the muSR-method by Mamedov, T N, Baturin, A S, Blank, V D, Herlach, D, Gorelkin, V N, Gritsaj, K I, Kuznetsov, M S, Nosukhin, S A, Ralchenko, V G, Stoykov, A V, Terentiev, S A, Zhukov, V A, Zimmermann, U

    Published in Diamond and related materials (01-07-2008)
    “…Polarized negative muons were used to study the dynamics of non-equilibrium charge carriers in diamond. From the behavior of the muon polarization it is…”
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    Journal Article
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    Measurement of the magnetic moment of the negative muon bound in heavy atoms by Mamedov, T. N., Gritsay, K. I., Stoykov, A. V., Herlach, D., Scheuermann, R., Zimmermann, U.

    “…The magnetic moment (g factor) of the negative muon bound in the 1s state of Zn, Ge, Cd, and Pb atoms was measured. A considerable difference between the…”
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    Behaviour of muonium in synthetic diamond by Mamedov, T. N, Blank, V. D, Gorelkin, V. N, Gritsaj, K. I, Kuznetsov, M. S, Nosukhin, S. A, Ralchenko, V. G, Stoykov, A. V, Scheuermann, R, Terentiev, S. A

    Published 21-05-2010
    “…The probabilities of finding the muon in various states in synthetic single crystal and polycrystalline diamond were studied. In the IIa-type single-crystal…”
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    Journal Article
  17. 17