Search Results - "Stotz, James A. H."
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1
Flying electron spin control gates
Published in Nature communications (14-09-2022)“…The control of "flying” (or moving) spin qubits is an important functionality for the manipulation and exchange of quantum information between remote locations…”
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Defect-Free Phononic Crystal Waveguides on GaAs
Published in Crystals (Basel) (01-11-2023)“…A phononic crystal waveguide is presented that consists of the inverse of a typical structure. Instead of a defect waveguide within an extended phononic…”
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3
Coherent spin transport through dynamic quantum dots
Published in Nature materials (01-08-2005)“…Spin transport and manipulation in semiconductors have been studied intensively with the ultimate goal of realizing spintronic devices. Previous work in GaAs…”
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4
A gaas phononic crystal with shallow noncylindrical holes
Published in IEEE transactions on ultrasonics, ferroelectrics, and frequency control (01-02-2014)“…A square lattice of shallow, noncylindrical holes in GaAs is shown to act as a phononic crystal (PnC) reflector. The holes are produced by wet-etching a GaAs…”
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5
Surface acoustic wave modes in two-dimensional shallow void inclusion phononic crystals on GaAs
Published 31-08-2018“…Surface acoustic waves in two-dimensional phononic crystals consisting of a square array of shallow, two to three micron deep cylindrical void inclusions are…”
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6
Flying electron spin control gates
Published 21-11-2021“…The control of "flying" (or moving) spin qubits is an important functionality for the manipulation and exchange of quantum information between remote locations…”
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7
Optimizing Phononic Crystal Waveguides for Acoustically Induced Spin Transport
Published 12-11-2024“…Through the use of strain and induced piezoelectric fields, surface acoustic waves have been shown to control quantum information processes, such as single…”
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A Phononic Crystal Waveguide Using Surface Waves Below the Sound Cone
Published 01-11-2024“…Surface acoustic waves are commonly used in a variety of radio-frequency electrical devices as a result of their operation at high frequencies and robust…”
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