Search Results - "Stiff, D. A"
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High-detectivity, normal-incidence, mid-infrared (λ∼4 μm)InAs/GaAs quantum-dot detector operating at 150 K
Published in Applied physics letters (16-07-2001)“…Normal-incidence InAs/GaAs quantum-dot detectors have been grown, fabricated, and characterized for mid-infrared detection in the temperature range from 78 to…”
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2
QUANTUM DOT OPTO-ELECTRONIC DEVICES
Published in Annual review of materials research (01-01-2004)“…▪ Abstract Highly strained semiconductors grow epitaxially on mismatched substrates in the Stranski-Krastanow growth mode, wherein islands are formed after a…”
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3
Resonant infrared matrix-assisted pulsed laser evaporation of CdSe colloidal quantum dot/poly[2-methoxy-5-(2′-ethylhexyloxy)-1,4-(1-cyano vinylene)phenylene] hybrid nanocomposite thin films
Published in Thin solid films (30-10-2009)“…CdSe colloidal quantum dot / poly[2-methoxy-5-(2′-ethylhexyloxy)-1,4-(1-cyano vinylene)phenylene] hybrid nanocomposite thin films were deposited using resonant…”
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4
High-temperature operation of InAs-GaAs quantum-dot infrared photodetectors with large responsivity and detectivity
Published in IEEE photonics technology letters (01-05-2004)“…We have optimized the growth of multiple (40-70) layers of self-organized InAs quantum dots separated by GaAs barrier layers in order to enhance the absorption…”
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5
Substructure in the Andromeda Galaxy Globular Cluster System
Published in The Astrophysical journal (01-06-2003)Get full text
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Contribution of field-assisted tunneling emission to dark current in InAs-GaAs quantum dot infrared photodetectors
Published in IEEE photonics technology letters (01-03-2004)“…A model for the dark current in quantum dot infrared photodetectors, including thermionic emission and field-assisted tunneling, is developed. The calculated…”
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Normal-incidence, high-temperature, mid-infrared, InAs-GaAs vertical quantum-dot infrared photodetector
Published in IEEE journal of quantum electronics (01-11-2001)“…The growth, fabrication, and characterization of a normal-incidence, high-temperature, mid-wavelength infrared, InAs-GaAs vertical quantum-dot infrared…”
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Absorption, carrier lifetime, and gain in InAs-GaAs quantum-dot infrared photodetectors
Published in IEEE journal of quantum electronics (01-03-2003)“…Quantum-dot infrared photodetectors (QDIPs) are being studied extensively for mid-wavelength and long-wavelength infrared detection because they offer…”
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Raster-scan imaging with normal-incidence, midinfrared InAs/GaAs quantum dot infrared photodetectors
Published in Applied physics letters (06-05-2002)“…We demonstrate normal incidence infrared imaging with quantum dot infrared photodetectors using a raster-scan technique. The device heterostructure, containing…”
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10
Hot dot detectors
Published in IEEE circuits and devices magazine (01-01-2002)“…The properties of normal-incidence, high-temperature, mid-wavelength IR, InAs/GaAs vertical QDIPs with and without an Al sub(0.3)Ga sub(0.7)As current-blocking…”
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Probing dopant incorporation in InAs/GaAs QDIPs by polarization-dependent Fourier transform infrared spectroscopy
Published in Infrared physics & technology (01-10-2007)“…In order to improve spectral response tunability of quantum-dot infrared photodetectors (QDIPs), it is critical to understand how dopants are incorporated into…”
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The impact of laser-target absorption depth on the surface and internal morphology of matrix-assisted pulsed laser evaporated conjugated polymer thin films
Published in Chemical physics letters (06-08-2009)“…The impact of laser-target absorption depth on the surface and internal morphology of matrix-assisted pulsed laser evaporated conjugated polymer thin films…”
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13
Resonant tunneling quantum dot infrared photodetector (RT-QDIP): separating dark current and photocurrent
Published in Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC (2004)“…In this paper, we present a novel approach to reduce dark current in quantum dot infrared photodetectors that uses resonant tunneling barriers to selectively…”
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Conference Proceeding -
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Calculation of Intraband Absorption Coefficients in Organic/Inorganic Nanocomposites: Effects of Colloidal Quantum Dot Surface Ligand and Dot Size
Published in IEEE journal of quantum electronics (01-11-2011)“…Hybrid nanocomposite thin films composed of inorganic colloidal quantum dots (CQDs) embedded in an organic conjugated polymer have shown promise as a method…”
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Effect of donor-complex-defect-induced dipole field on InAs∕GaAs quantum dot infrared photodetector activation energy
Published in Applied physics letters (04-06-2007)“…In order to understand dopant incorporation in quantum dot infrared photodetectors, three quantum dot (QD) Schottky diodes (undoped, delta doped, and…”
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Effect of donor-complex-defect-induced dipole field on In As ∕ Ga As quantum dot infrared photodetector activation energy
Published in Applied physics letters (07-06-2007)“…In order to understand dopant incorporation in quantum dot infrared photodetectors, three quantum dot (QD) Schottky diodes (undoped, delta doped, and…”
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Doping characterization of In As ∕ Ga As quantum dot heterostructureby cross-sectional scanning capacitance microscopy
Published in Applied physics letters (03-03-2008)“…In order to better understand dopant incorporation in quantum dot infrared photodetectors, the application of cross-sectional scanning capacitance microscopy…”
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18
Doping characterization of InAs∕GaAs quantum dot heterostructure by cross-sectional scanning capacitance microscopy
Published in Applied physics letters (03-03-2008)“…In order to better understand dopant incorporation in quantum dot infrared photodetectors, the application of cross-sectional scanning capacitance microscopy…”
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Journal Article -
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Low-bias, high-temperature performance of a normal-incidence InAs/GaAs vertical quantum-dot infrared photodetector with a current-blocking barrier
Published in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures (01-05-2002)“…The growth, fabrication, and characterization of a low-bias, high-temperature, InAs/GaAs vertical quantum dot infrared photodetector with a single Al 0.3 Ga…”
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Conference Proceeding -
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Heterostructures for achieving large responsivity in InAs/GaAs quantum dot infrared photodetectors
Published in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures (01-05-2004)“…Quantum dot infrared photodetectors (QDIPs) offer normal-incidence detection, low dark current, high operating temperature, and multi-wavelength detection. In…”
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Conference Proceeding