Search Results - "Stiff, D. A"

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  1. 1

    High-detectivity, normal-incidence, mid-infrared (λ∼4 μm)InAs/GaAs quantum-dot detector operating at 150 K by Stiff, A. D., Krishna, S., Bhattacharya, P., Kennerly, S.

    Published in Applied physics letters (16-07-2001)
    “…Normal-incidence InAs/GaAs quantum-dot detectors have been grown, fabricated, and characterized for mid-infrared detection in the temperature range from 78 to…”
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    Journal Article
  2. 2

    QUANTUM DOT OPTO-ELECTRONIC DEVICES by Bhattacharya, P, Ghosh, S, Stiff-Roberts, A D

    Published in Annual review of materials research (01-01-2004)
    “…▪ Abstract  Highly strained semiconductors grow epitaxially on mismatched substrates in the Stranski-Krastanow growth mode, wherein islands are formed after a…”
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    Journal Article
  3. 3

    Resonant infrared matrix-assisted pulsed laser evaporation of CdSe colloidal quantum dot/poly[2-methoxy-5-(2′-ethylhexyloxy)-1,4-(1-cyano vinylene)phenylene] hybrid nanocomposite thin films by Pate, R., Lantz, K.R., Stiff-Roberts, A.D.

    Published in Thin solid films (30-10-2009)
    “…CdSe colloidal quantum dot / poly[2-methoxy-5-(2′-ethylhexyloxy)-1,4-(1-cyano vinylene)phenylene] hybrid nanocomposite thin films were deposited using resonant…”
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    Journal Article
  4. 4

    High-temperature operation of InAs-GaAs quantum-dot infrared photodetectors with large responsivity and detectivity by Chakrabarti, S., Stiff-Roberts, A.D., Bhattacharya, P., Gunapala, S., Bandara, S., Rafol, S.B., Kennerly, S.W.

    Published in IEEE photonics technology letters (01-05-2004)
    “…We have optimized the growth of multiple (40-70) layers of self-organized InAs quantum dots separated by GaAs barrier layers in order to enhance the absorption…”
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    Journal Article
  5. 5
  6. 6

    Contribution of field-assisted tunneling emission to dark current in InAs-GaAs quantum dot infrared photodetectors by Stiff-Roberts, A.D., Su, X.H., Chakrabarti, S., Bhattacharya, P.

    Published in IEEE photonics technology letters (01-03-2004)
    “…A model for the dark current in quantum dot infrared photodetectors, including thermionic emission and field-assisted tunneling, is developed. The calculated…”
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    Journal Article
  7. 7

    Normal-incidence, high-temperature, mid-infrared, InAs-GaAs vertical quantum-dot infrared photodetector by Stiff, A.D., Krishna, S., Bhattacharya, P., Kennerly, S.W.

    Published in IEEE journal of quantum electronics (01-11-2001)
    “…The growth, fabrication, and characterization of a normal-incidence, high-temperature, mid-wavelength infrared, InAs-GaAs vertical quantum-dot infrared…”
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    Journal Article
  8. 8

    Absorption, carrier lifetime, and gain in InAs-GaAs quantum-dot infrared photodetectors by Kochman, B., Stiff-Roberts, A.D., Chakrabarti, S., Phillips, J.D., Krishna, S., Singh, J., Bhattacharya, P.

    Published in IEEE journal of quantum electronics (01-03-2003)
    “…Quantum-dot infrared photodetectors (QDIPs) are being studied extensively for mid-wavelength and long-wavelength infrared detection because they offer…”
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    Journal Article
  9. 9

    Raster-scan imaging with normal-incidence, midinfrared InAs/GaAs quantum dot infrared photodetectors by Stiff-Roberts, A. D., Chakrabarti, S., Pradhan, S., Kochman, B., Bhattacharya, P.

    Published in Applied physics letters (06-05-2002)
    “…We demonstrate normal incidence infrared imaging with quantum dot infrared photodetectors using a raster-scan technique. The device heterostructure, containing…”
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    Journal Article
  10. 10

    Hot dot detectors by Krishna, S., Stiff-Roberts, A.D., Phillips, J.D., Bhattacharya, P., Kennerly, S.W.

    Published in IEEE circuits and devices magazine (01-01-2002)
    “…The properties of normal-incidence, high-temperature, mid-wavelength IR, InAs/GaAs vertical QDIPs with and without an Al sub(0.3)Ga sub(0.7)As current-blocking…”
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    Journal Article
  11. 11

    Probing dopant incorporation in InAs/GaAs QDIPs by polarization-dependent Fourier transform infrared spectroscopy by Zhao, Z.Y., Yi, C., Stiff-Roberts, A.D., Hoffman, A.J., Wasserman, D., Gmachl, C.

    Published in Infrared physics & technology (01-10-2007)
    “…In order to improve spectral response tunability of quantum-dot infrared photodetectors (QDIPs), it is critical to understand how dopants are incorporated into…”
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    Journal Article
  12. 12

    The impact of laser-target absorption depth on the surface and internal morphology of matrix-assisted pulsed laser evaporated conjugated polymer thin films by Pate, R., Stiff-Roberts, A.D.

    Published in Chemical physics letters (06-08-2009)
    “…The impact of laser-target absorption depth on the surface and internal morphology of matrix-assisted pulsed laser evaporated conjugated polymer thin films…”
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    Journal Article
  13. 13

    Resonant tunneling quantum dot infrared photodetector (RT-QDIP): separating dark current and photocurrent by Su, X.H., Stiff-Roberts, A.D., Chakrabarti, S., Singh, J., Bhattacharya, P.

    “…In this paper, we present a novel approach to reduce dark current in quantum dot infrared photodetectors that uses resonant tunneling barriers to selectively…”
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    Conference Proceeding
  14. 14

    Calculation of Intraband Absorption Coefficients in Organic/Inorganic Nanocomposites: Effects of Colloidal Quantum Dot Surface Ligand and Dot Size by Lantz, K. R., Stiff-Roberts, A. D.

    Published in IEEE journal of quantum electronics (01-11-2011)
    “…Hybrid nanocomposite thin films composed of inorganic colloidal quantum dots (CQDs) embedded in an organic conjugated polymer have shown promise as a method…”
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    Journal Article
  15. 15

    Effect of donor-complex-defect-induced dipole field on InAs∕GaAs quantum dot infrared photodetector activation energy by Zhao, Z. Y., Yi, C., Lantz, K. R., Stiff-Roberts, A. D.

    Published in Applied physics letters (04-06-2007)
    “…In order to understand dopant incorporation in quantum dot infrared photodetectors, three quantum dot (QD) Schottky diodes (undoped, delta doped, and…”
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    Journal Article
  16. 16

    Effect of donor-complex-defect-induced dipole field on In As ∕ Ga As quantum dot infrared photodetector activation energy by Zhao, Z. Y., Yi, C., Lantz, K. R., Stiff-Roberts, A. D.

    Published in Applied physics letters (07-06-2007)
    “…In order to understand dopant incorporation in quantum dot infrared photodetectors, three quantum dot (QD) Schottky diodes (undoped, delta doped, and…”
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    Journal Article
  17. 17

    Doping characterization of In As ∕ Ga As quantum dot heterostructureby cross-sectional scanning capacitance microscopy by Zhao, Z. Y., Zhang, W. M., Yi, C., Stiff-Roberts, A. D., Rodriguez, B. J., Baddorf, A. P.

    Published in Applied physics letters (03-03-2008)
    “…In order to better understand dopant incorporation in quantum dot infrared photodetectors, the application of cross-sectional scanning capacitance microscopy…”
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    Journal Article
  18. 18

    Doping characterization of InAs∕GaAs quantum dot heterostructure by cross-sectional scanning capacitance microscopy by Zhao, Z. Y., Zhang, W. M., Yi, C., Stiff-Roberts, A. D., Rodriguez, B. J., Baddorf, A. P.

    Published in Applied physics letters (03-03-2008)
    “…In order to better understand dopant incorporation in quantum dot infrared photodetectors, the application of cross-sectional scanning capacitance microscopy…”
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    Journal Article
  19. 19

    Low-bias, high-temperature performance of a normal-incidence InAs/GaAs vertical quantum-dot infrared photodetector with a current-blocking barrier by Stiff-Roberts, A. D., Krishna, S., Bhattacharya, P., Kennerly, S.

    “…The growth, fabrication, and characterization of a low-bias, high-temperature, InAs/GaAs vertical quantum dot infrared photodetector with a single Al 0.3 Ga…”
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    Conference Proceeding
  20. 20

    Heterostructures for achieving large responsivity in InAs/GaAs quantum dot infrared photodetectors by Chakrabarti, S., Stiff-Roberts, A. D., Bhattacharya, P., Kennerly, S. W.

    “…Quantum dot infrared photodetectors (QDIPs) offer normal-incidence detection, low dark current, high operating temperature, and multi-wavelength detection. In…”
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    Conference Proceeding