Search Results - "Stettler, M. A."

  • Showing 1 - 7 results of 7
Refine Results
  1. 1
    Analysis of graphene nanoribbons as a channel material for field-effect transistors

    Analysis of graphene nanoribbons as a channel material for field-effect transistors by Obradovic, B., Kotlyar, R., Heinz, F., Matagne, P., Rakshit, T., Giles, M. D., Stettler, M. A., Nikonov, D. E.

    Published in Applied physics letters (03-04-2006)
    “…Electronic properties of graphene (carbon) nanoribbons are studied and compared to those of carbon nanotubes. The nanoribbons are found to have qualitatively…”
    Get full text
    Journal Article
    Save to List
    Saved in:
  2. 2
    A critical examination of the assumptions underlying macroscopic transport equations for silicon devices

    A critical examination of the assumptions underlying macroscopic transport equations for silicon devices by Stettler, M.A., Alam, M.A., Lundstrom, M.S.

    Published in IEEE transactions on electron devices (01-04-1993)
    “…Assumptions used to derive macroscopic transport equations for silicon devices are critically examined. The position- and momentum-dependent distribution…”
    Get full text
    Journal Article
    Save to List
    Saved in:
  3. 3
    A detailed investigation of heterojunction transport using a rigorous solution to the Boltzmann equation

    A detailed investigation of heterojunction transport using a rigorous solution to the Boltzmann equation by Stettler, M.A., Lundstrom, M.S.

    Published in IEEE transactions on electron devices (01-04-1994)
    “…A detailed study of electron transport across an Np/sup +/ heterojunction diode is performed using a rigorous numerical solution to the Boltzmann equation…”
    Get full text
    Journal Article
    Save to List
    Saved in:
  4. 4
    A microscopic study of transport in thin base silicon bipolar transistors

    A microscopic study of transport in thin base silicon bipolar transistors by Stettler, M.A., Lundstrom, M.S.

    Published in IEEE transactions on electron devices (01-06-1994)
    “…A comprehensive study of electron transport within silicon bipolar transistors with varying base widths is conducted using a rigorous microscopic model, the…”
    Get full text
    Journal Article
    Save to List
    Saved in:
  5. 5
    Self-consistent scattering matrix calculation of the distribution function in semiconductor devices

    Self-consistent scattering matrix calculation of the distribution function in semiconductor devices by STETTLER, M. A, LUNDSTROM, M. S

    Published in Applied physics letters (08-06-1992)
    “…The scattering matrix approach is a new technique for solving the Boltzmann equation in devices. We report a self-consistent application of the technique to…”
    Get full text
    Journal Article
    Save to List
    Saved in:
  6. 6
    Analysis of graphene nanoribbons as a channel materialfor field-effect transistors

    Analysis of graphene nanoribbons as a channel materialfor field-effect transistors by Obradovic, B., Kotlyar, R., Heinz, F., Matagne, P., Rakshit, T., Giles, M. D., Stettler, M. A., Nikonov, D. E.

    Published in Applied physics letters (03-04-2006)
    “…Electronic properties of graphene (carbon) nanoribbons are studied and compared to those of carbon nanotubes. The nanoribbons are found to have qualitatively…”
    Get full text
    Journal Article
    Save to List
    Saved in:
  7. 7
    The realization of scattering matrix approach to transport modeling through spherical harmonics

    The realization of scattering matrix approach to transport modeling through spherical harmonics by Han, Zhiyi, Goldsman, Neil, Stettler, Mark A.

    Published in Solid-state electronics (01-03-1999)
    “…The spherical harmonics are applied to realize the scattering matrix method of carrier transport modeling. Using the spherical harmonics has the advantage of…”
    Get full text
    Journal Article
    Save to List
    Saved in:

Search Tools: