Search Results - "Sternberg, A.L"

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  1. 1

    Towards SET Mitigation in RF Digital PLLs: From Error Characterization to Radiation Hardening Considerations by Boulghassoul, Y., Massengill, L.W., Sternberg, A.L., Bhuva, B.L., Holman, W.T.

    Published in IEEE transactions on nuclear science (01-08-2006)
    “…In this work, the characteristics of single-event transient (SET) generation and propagation are analyzed in a digital phase-locked loop (DPLL) circuit,…”
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  2. 2

    Directional Sensitivity of Single Event Upsets in 90 nm CMOS Due to Charge Sharing by Amusan, O.A., Massengill, L.W., Baze, M.P., Bhuva, B.L., Witulski, A.F., DasGupta, S., Sternberg, A.L., Fleming, P.R., Heath, C.C., Alles, M.L.

    Published in IEEE transactions on nuclear science (01-12-2007)
    “…Heavy-ion testing of a radiation-hardened-by-design (RHBD) 90 nm dual interlocked cell (DICE latch) shows significant directional sensitivity results impacting…”
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  3. 3

    HBD layout isolation techniques for multiple node charge collection mitigation by Black, J.D., Sternberg, A.L., Alles, M.L., Witulski, A.F., Bhuva, B.L., Massengill, L.W., Benedetto, J.M., Baze, M.P., Wert, J.L., Hubert, M.G.

    Published in IEEE transactions on nuclear science (01-12-2005)
    “…A three-dimensional (3D) technology computer-aided design (TCAD) model was used to simulate charge collection at multiple nodes. Guard contacts are shown to…”
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  4. 4

    Integrating Circuit Level Simulation and Monte-Carlo Radiation Transport Code for Single Event Upset Analysis in SEU Hardened Circuitry by Warren, K.M., Sternberg, A.L., Weller, R.A., Baze, M.P., Massengill, L.W., Reed, R.A., Mendenhall, M.H., Schrimpf, R.D.

    Published in IEEE transactions on nuclear science (01-12-2008)
    “…Monte-Carlo radiation transport code is coupled with SPICE circuit level simulation to identify regions of single event upset vulnerability in an SEU hardened…”
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  5. 5

    Effects of technology scaling on the SET sensitivity of RF CMOS Voltage-controlled oscillators by Boulghassoul, Y., Massengill, L.W., Sternberg, A.L., Bhuva, B.L.

    Published in IEEE transactions on nuclear science (01-12-2005)
    “…We analyze single-event transient (SET) effects in a high-speed voltage-controlled oscillator (VCO) design that is applicable to mixed-signal RF operations…”
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  6. 6

    Measurement and Analysis of Interconnect Crosstalk Due to Single Events in a 90 nm CMOS Technology by Balasubramanian, A., Amusan, O.A., Bhuva, B.L., Reed, R.A., Sternberg, A.L., Massengill, L.W., McMorrow, D., Nation, S.A., Melinger, J.S.

    Published in IEEE transactions on nuclear science (01-08-2008)
    “…The presence of single event (SE) induced interconnect crosstalk has been measured and demonstrated experimentally using single and two photon laser absorption…”
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  7. 7

    Spatial and temporal characteristics of energy deposition by protons and alpha particles in silicon by Kobayashi, A.S., Sternberg, A.L., Massengill, L.W., Schrimpf, R.D., Weller, R.A.

    Published in IEEE transactions on nuclear science (01-12-2004)
    “…We present spatial and temporal distributions of energy deposition in silicon obtained from Monte Carlo simulations with Geant4. Detailed simulations are…”
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  8. 8

    Comparison of SETs in bipolar linear circuits generated with an ion microbeam, laser light, and circuit simulation by Pease, R.L., Sternberg, A.L., Boulghassoul, Y., Massengill, L.W., Buchner, S., McMorrow, D., Walsh, D.S., Hash, G.L., LaLumondiere, S.D., Moss, S.C.

    Published in IEEE transactions on nuclear science (01-12-2002)
    “…Generally good agreement is obtained between the single-event output voltage transient waveforms obtained by exposing individual circuit elements of a bipolar…”
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  9. 9

    Single-event mitigation in combinational logic using targeted data path hardening by Srinivasan, V., Sternberg, A.L., Duncan, A.R., Robinson, W.H., Bhuva, B.L., Massengill, L.W.

    Published in IEEE transactions on nuclear science (01-12-2005)
    “…A technique is proposed to selectively harden complex combinational logic circuits to single-event (SE) upsets. Propagation paths with sensitive nodes are…”
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  10. 10

    Proton radiation response mechanisms in bipolar analog circuits by Barnaby, H.J., Schrimpf, R.D., Sternberg, A.L., Berthe, V., Cirba, C.R., Pease, R.L.

    Published in IEEE transactions on nuclear science (01-12-2001)
    “…The experimental data presented in this paper indicate that the doping and geometry of critical transistors are the primary factors that affect the proton…”
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  11. 11

    Circuit modeling of the LM124 operational amplifier for analog single-event transient analysis by Boulghassoul, Y., Massengill, L.W., Sternberg, A.L., Pease, R.L., Buchner, S., Howard, J.W., McMorrow, D., Savage, M.W., Poivey, C.

    Published in IEEE transactions on nuclear science (01-12-2002)
    “…This work presents the development of a transistor-level circuit model of the LM124 operational amplifier specifically engineered and calibrated for analog…”
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  12. 12

    Evaluating average and atypical response in radiation effects simulations by Weller, R.A., Sternberg, A.L., Massengill, L.W., Schrimpf, R.D., Fleetwood, D.M.

    Published in IEEE transactions on nuclear science (01-12-2003)
    “…We examine the limits of performing single-event simulations using pre-averaged radiation events. Geant4 simulations show the necessity, for future devices, to…”
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  13. 13

    The role of parasitic elements in the single-event transient response of linear circuits by Sternberg, A.L., Massengill, L.W., Buchner, S., Pease, R.L., Boulghassoul, Y., Savage, M.W., McMorrow, D., Weller, R.A.

    Published in IEEE transactions on nuclear science (01-12-2002)
    “…Parasitic elements can play an important role in the single-event transient sensitivity of a circuit. This work describes how parasitics can affect the…”
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  14. 14

    Temperature dependence and irradiation response of 1/f-noise in MOSFETs by Xiong, H.D., Fleetwood, D.M., Choi, B.K., Sternberg, A.L.

    Published in IEEE transactions on nuclear science (01-12-2002)
    “…Measured the 1/f-noise of 3 /spl mu/m/spl times/16 /spl mu/m nMOS transistors with gate-oxide thickness of 48 nm as a function of frequency (f), gate voltage…”
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  15. 15

    Total dose effects on double gate fully depleted SOI MOSFETs by Bongim Jun, Xiong, H.D., Sternberg, A.L., Cirba, C.R., Dakai Chen, Schrimpf, R.D., Fleetwood, D.M., Schwank, J.R., Cristoloveanu, S.

    Published in IEEE transactions on nuclear science (01-12-2004)
    “…Total ionizing dose effects on fully-depleted (FD) silicon-on-insulator (SOI) transistors are studied when the devices are operated in single gate (SG) and…”
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  16. 16

    Effect of amplifier parameters on single-event transients in an inverting operational amplifier by Sternberg, A.L., Massengill, L.W., Schrimpf, R.D., Boulghassoul, Y., Barnaby, H.J., Buchner, S., Pease, R.L., Howard, J.W.

    Published in IEEE transactions on nuclear science (01-06-2002)
    “…Laser data and simulation tools are combined to investigate the single-event transient response of the LM124 operational amplifier. The effect of the bandwidth…”
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  17. 17
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    Comparison of SEUTool results to experimental results in boeing radiation tolerant DSP (BDSP C30) by Duncan, A.R., Srinivasan, V., Sternberg, A.L., Robinson, W.H., Bhuva, B.L., Massengill, L.W.

    Published in IEEE transactions on nuclear science (01-12-2005)
    “…A CAD tool (SEUTool) is analyzed for simulating single-event upsets (SEUs) in large combinational logic circuits. SEUTool cross-section results show excellent…”
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  19. 19
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    Application determination of single-event transient characteristics in the LM 111 comparator by Sternberg, A.L., Massengill, L.W., Schrimpf, R.D., Calvel, P.

    Published in IEEE transactions on nuclear science (01-12-2001)
    “…The effect of an integrated circuit's application can have a profound effect on its single-event transient response. This paper demonstrates how small changes…”
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