Search Results - "Sternberg, A.L"
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Towards SET Mitigation in RF Digital PLLs: From Error Characterization to Radiation Hardening Considerations
Published in IEEE transactions on nuclear science (01-08-2006)“…In this work, the characteristics of single-event transient (SET) generation and propagation are analyzed in a digital phase-locked loop (DPLL) circuit,…”
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2
Directional Sensitivity of Single Event Upsets in 90 nm CMOS Due to Charge Sharing
Published in IEEE transactions on nuclear science (01-12-2007)“…Heavy-ion testing of a radiation-hardened-by-design (RHBD) 90 nm dual interlocked cell (DICE latch) shows significant directional sensitivity results impacting…”
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3
HBD layout isolation techniques for multiple node charge collection mitigation
Published in IEEE transactions on nuclear science (01-12-2005)“…A three-dimensional (3D) technology computer-aided design (TCAD) model was used to simulate charge collection at multiple nodes. Guard contacts are shown to…”
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4
Integrating Circuit Level Simulation and Monte-Carlo Radiation Transport Code for Single Event Upset Analysis in SEU Hardened Circuitry
Published in IEEE transactions on nuclear science (01-12-2008)“…Monte-Carlo radiation transport code is coupled with SPICE circuit level simulation to identify regions of single event upset vulnerability in an SEU hardened…”
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5
Effects of technology scaling on the SET sensitivity of RF CMOS Voltage-controlled oscillators
Published in IEEE transactions on nuclear science (01-12-2005)“…We analyze single-event transient (SET) effects in a high-speed voltage-controlled oscillator (VCO) design that is applicable to mixed-signal RF operations…”
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6
Measurement and Analysis of Interconnect Crosstalk Due to Single Events in a 90 nm CMOS Technology
Published in IEEE transactions on nuclear science (01-08-2008)“…The presence of single event (SE) induced interconnect crosstalk has been measured and demonstrated experimentally using single and two photon laser absorption…”
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7
Spatial and temporal characteristics of energy deposition by protons and alpha particles in silicon
Published in IEEE transactions on nuclear science (01-12-2004)“…We present spatial and temporal distributions of energy deposition in silicon obtained from Monte Carlo simulations with Geant4. Detailed simulations are…”
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8
Comparison of SETs in bipolar linear circuits generated with an ion microbeam, laser light, and circuit simulation
Published in IEEE transactions on nuclear science (01-12-2002)“…Generally good agreement is obtained between the single-event output voltage transient waveforms obtained by exposing individual circuit elements of a bipolar…”
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9
Single-event mitigation in combinational logic using targeted data path hardening
Published in IEEE transactions on nuclear science (01-12-2005)“…A technique is proposed to selectively harden complex combinational logic circuits to single-event (SE) upsets. Propagation paths with sensitive nodes are…”
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10
Proton radiation response mechanisms in bipolar analog circuits
Published in IEEE transactions on nuclear science (01-12-2001)“…The experimental data presented in this paper indicate that the doping and geometry of critical transistors are the primary factors that affect the proton…”
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11
Circuit modeling of the LM124 operational amplifier for analog single-event transient analysis
Published in IEEE transactions on nuclear science (01-12-2002)“…This work presents the development of a transistor-level circuit model of the LM124 operational amplifier specifically engineered and calibrated for analog…”
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12
Evaluating average and atypical response in radiation effects simulations
Published in IEEE transactions on nuclear science (01-12-2003)“…We examine the limits of performing single-event simulations using pre-averaged radiation events. Geant4 simulations show the necessity, for future devices, to…”
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13
The role of parasitic elements in the single-event transient response of linear circuits
Published in IEEE transactions on nuclear science (01-12-2002)“…Parasitic elements can play an important role in the single-event transient sensitivity of a circuit. This work describes how parasitics can affect the…”
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14
Temperature dependence and irradiation response of 1/f-noise in MOSFETs
Published in IEEE transactions on nuclear science (01-12-2002)“…Measured the 1/f-noise of 3 /spl mu/m/spl times/16 /spl mu/m nMOS transistors with gate-oxide thickness of 48 nm as a function of frequency (f), gate voltage…”
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15
Total dose effects on double gate fully depleted SOI MOSFETs
Published in IEEE transactions on nuclear science (01-12-2004)“…Total ionizing dose effects on fully-depleted (FD) silicon-on-insulator (SOI) transistors are studied when the devices are operated in single gate (SG) and…”
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16
Effect of amplifier parameters on single-event transients in an inverting operational amplifier
Published in IEEE transactions on nuclear science (01-06-2002)“…Laser data and simulation tools are combined to investigate the single-event transient response of the LM124 operational amplifier. The effect of the bandwidth…”
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17
Patterns of Growth and Decline in Lung Function in Persistent Childhood Asthma
Published in The New England journal of medicine (12-05-2016)“…Data from a controlled trial of asthma treatment that enrolled patients in the first decade of life were combined with follow-up data to provide novel…”
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18
Comparison of SEUTool results to experimental results in boeing radiation tolerant DSP (BDSP C30)
Published in IEEE transactions on nuclear science (01-12-2005)“…A CAD tool (SEUTool) is analyzed for simulating single-event upsets (SEUs) in large combinational logic circuits. SEUTool cross-section results show excellent…”
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19
Education Outcomes in a Duty-Hour Flexibility Trial in Internal Medicine
Published in The New England journal of medicine (19-04-2018)“…Internal medicine residency programs were randomly assigned to standard duty-hour policies or to flexible policies without limits on shift length and time off…”
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20
Application determination of single-event transient characteristics in the LM 111 comparator
Published in IEEE transactions on nuclear science (01-12-2001)“…The effect of an integrated circuit's application can have a profound effect on its single-event transient response. This paper demonstrates how small changes…”
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