Search Results - "Stellmach, Joachim"

Origin of defect luminescence in ultraviolet emitting AlGaN diode structures by Feneberg, Martin, Romero, Fátima, Goldhahn, Rüdiger, Wernicke, Tim, Reich, Christoph, Stellmach, Joachim, Mehnke, Frank, Knauer, Arne, Weyers, Markus, Kneissl, Michael

“…Light emitting diode structures emitting in the ultraviolet spectral range are investigated. The samples exhibit defect luminescence bands. Synchrotron-based…”
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Anisotropic optical properties of semipolar AlGaN layers grown on m-plane sapphire by Feneberg, Martin, Winkler, Michael, Klamser, Juliane, Stellmach, Joachim, Frentrup, Martin, Ploch, Simon, Mehnke, Frank, Wernicke, Tim, Kneissl, Michael, Goldhahn, Rüdiger

“…The valence band order of AlxGa  1−x N is investigated experimentally by analyzing the anisotropic dielectric functions of semipolar (112¯2) AlGaN thin films…”
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Modulated Epitaxial Lateral Overgrowth of AlN for Efficient UV LEDs by Kueller, V., Knauer, A., Reich, C., Mogilatenko, A., Weyers, M., Stellmach, J., Wernicke, T., Kneissl, M., Zhihong Yang, Chua, C. L., Johnson, N. M.

“…A reduction of the threading dislocation density in AlN layers on a sapphire from 10 10 cm -2 to 10 9 cm -2 was achieved by applying epitaxial lateral…”
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Polarization of photoluminescence emission from semi-polar (11–22) AlGaN layers by Netzel, Carsten, Stellmach, Joachim, Feneberg, Martin, Frentrup, Martin, Winkler, Michael, Mehnke, Frank, Wernicke, Tim, Goldhahn, Rüdiger, Kneissl, Michael, Weyers, Markus

“…We studied the optical polarization of surface-emitted photoluminescence from thick semi-polar (11–22) AlxGa1−xN layers on m-plane sapphire substrates with…”
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Growth mode transition and relaxation of thin InGaN layers on GaN (0001) by Pristovsek, Markus, Kadir, Abdul, Meissner, Christian, Schwaner, Tilman, Leyer, Martin, Stellmach, Joachim, Kneissl, Michael, Ivaldi, Francesco, Kret, Sławomir

“…We have investigated on the growth of InGaN layers and quantum dots (QDs) on GaN (0001) by metal-organic vapour phase epitaxy. For indium contents above 15%…”
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Assessment of inventive step for organic chemical reactions: Structure–reactivity-relationships in the frame of the problem-solution approach (PSA) by Stellmach, Joachim A.

“…Structure–reactivity-relationships (SRR) or linear free energy relationships (LFER) are a part of the common general knowledge in the field of organic chemical…”
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The influences of the structure and activity of biologically active compounds on the assessment of inventive step by Stellmach, Joachim A.

“…The assessment of inventive step for (biologically) active organic chemical compounds is discussed in the light of the application of well-established…”
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A graphical representation of the problem-solution approach (PSA) to the assessment of inventive step by Stellmach, Joachim A.

“…The significant advantage of applying the problem-solution approach to the assessment of inventive step of patent applications is that this approach, contrary…”
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Metalorganic vapor phase epitaxy of InN on GaN using tertiary-butylhydrazine as nitrogen source by Kremzow, Raimund, Pristovsek, Markus, Stellmach, Joachim, Savaş, Özgür, Kneissl, Michael

“…The growth of InN on GaN/sapphire by metalorganic vapor-phase epitaxy (MOVPE) using tertiary-butylhydrazine (tBHy) was studied by varying temperature,…”
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Surface reconstructions of (0001) AlN during metal‐organic vapor phase epitaxy by Pristovsek, Markus, Bellman, Konrad, Mehnke, Frank, Stellmach, Joachim, Wernicke, Tim, Kneissl, Michael

“…We observed (0001) AlN wurzite surfaces by atomic force microscopy after 500 nm regrowth in metal‐organic vapor phase epitaxy. The steps changed from double to…”
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Single phase { 1 1 2 ¯ 2 } GaN on ( 1 0 1 ¯ 0 ) sapphire grown by metal-organic vapor phase epitaxy by Ploch, Simon, Bum Park, Jae, Stellmach, Joachim, Schwaner, Tilman, Frentrup, Martin, Niermann, Tore, Wernicke, Tim, Pristovsek, Markus, Lehmann, Michael, Kneissl, Michael

“…Heteroeptaxial growth of semipolar GaN on ( 1 0 1 ¯ 0 ) sapphire by metal-organic vapor phase epitaxy has been investigated using high temperature nucleation…”
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AlGaN-based ultraviolet lasers - Applications and materials challenges by Kneissl, Michael, Kolbe, Tim, Schlegel, Jessica, Stellmach, Joachim, Chua, Chris, Zhihong Yang, Knauer, Arne, Kuller, V., Weyers, Markus, Johnson, Noble M.

“…Recent progress in the development of ultraviolet laser diodes will be reviewed. The effect of the heterostructure design on the gain characteristics as well…”
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