Search Results - "Steinman, E.A."

Effect of Boron Impurity on the Light-Emitting Properties of Dislocation Structures Formed in Silicon by [Si.sup.+] Ion Implantation by Tereshchenko, A.N, Korolev, D.S, Mikhaylov, A.N, Belov, A.I, Nikolskaya, A.A, Pavlov, D.A, Tetelbaum, D.I, Steinman, E.A

“…The effect of boron implantation on the light-emitting properties of dislocation structures formed in silicon by [Si.sup.+] ion implantation with subsequent…”
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Effect of copper on dislocation luminescence centers in silicon by Tereshchenko, A. N., Steinman, E. A., Mazilkin, A. A.

“…The effect of copper on dislocation luminescence centers in silicon has been investigated using photoluminescence and transmission electron microscopy. It has…”
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Features and mechanisms of growth of cubic silicon carbide films on silicon by Orlov, L. K., Steinman, E. A., Smyslova, T. N., Ivina, N. L., Tereshchenko, A. N.

“…The mechanisms and specific features of the growth of silicon carbide layers through vacuum chemical epitaxy in the range of growth temperatures from 1000 to…”
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Luminescence induced in diamond by [He.sup.+] ion implantation into SiC/C composites with an inverse opal structure by Tereshchenko, A.N, Zinenko, V.I, Khodos, I.I, Agafonov, Yu. A, Zhokhov, A.A, Masalov, V.M, Steinman, E.A, Emelchenko, G.A

“…The photoluminescence induced in diamond by helium ion implantation into SiC/C nanocomposite samples and their structure revealed by high-resolution…”
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Charge transfer state of novel molecular complex C26H18Te2·C60·CS2 detected in single crystals by photoluminescence and ESR by Steinman, E.A, Kveder, V.V, Konarev, D.V, Qin, Wang, Grimmeiss, H.G

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Charge transfer state of novel molecular complex C 26H 18Te 2·C 60·CS 2 detected in single crystals by photoluminescence and ESR by Steinman, E.A, Kveder, V.V, Konarev, D.V, Qin, Wang, Grimmeiss, H.G

“…Photoluminescence (PL), time resolved PL and optical absorption spectra near the band gap energy and in the range of IR active vibration modes of a novel…”
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Optical characteristics of C{sub 60} single crystals grown in microgravity conditions by Steinman, E.A., Avdeev, S.V., Efimov, V.B.

“…This work is devoted to the growing and characterization of perfect C{sub 60} single crystals with the aim of further understanding of the physical properties…”
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Low-temperature strain relaxation in SiGe/Si heterostructures implanted with Ge + ions by Avrutin, V.S., Izyumskaya, N.F., Vyatkin, A.F., Zinenko, V.I., Agafonov, Yu.A., Irzhak, D.V., Roshchupkin, D.V., Steinman, E.A., Vdovin, V.I., Yugova, T.G.

“…Pseudomorphic Si 0.76Ge 0.24/Si heterostructures grown by molecular beam epitaxy were implanted with Ge + ions at 400 °C in such a way that an ion-damaged…”
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Possible Polymerisation at Dislocations in C60 Crystals by Dyachenko-Dekov, D.V., Iunin, Yu.L., Izotov, A.N., Kveder, V.V., Nikolaev, R.K., Orlov, V.I., Ossipyan, Yu.A., Sidorov, N.S., Steinman, E.A.

“…It is known that under hydrostatic pressures of about 1 GPa the polymerisation of molecules in C60 crystals occurs in a temperature range of about 400–600 K…”
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Low-temperature strain relaxation in ion-irradiated pseudomorphic SiGe/Si structures by Avrutin, V.S, Izyumskaya, N.F, Vyatkin, A.F, Zinenko, V.I, Agafonov, Yu.A, Irzhak, D.V, Roshchupkin, D.V, Steinman, E.A, Vdovin, V.I, Yugova, T.G

“…The effect of non-equilibrium point defects on strain relaxation in pseudomorphic Si 0.76Ge 0.24/Si heterostructures was studied by X-ray diffraction (XRD) and…”
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Photoluminescence of solid C60 polymerized under high pressure by Bashkin, I.O., Izotov, A.N., Moravsky, A.P., Negrii, V.D., Nikolaev, R.K., Ossipyan, Yu.A., Ponyatovsky, E.G., Steinman, E.A.

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Photoluminescence of solid C 60 polymerized under high pressure by Bashkin, I.O., Izotov, A.N., Moravsky, A.P., Negrii, V.D., Nikolaev, R.K., Ossipyan, Yu.A., Ponyatovsky, E.G., Steinman, E.A.

“…Photoluminescence (PL) spectra were measured on the C 60 polymeric phase prepared from a single crystal and from a microcrystalline powder treated at pressures…”
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Crystal structure and photoluminescence of single crystals of fullerene-9,9′-trans-bis(telluraxanthenyl) molecular complex: C26H18Te2 · C60 · CS2 by Kveder, V.V., Steinman, E.A., Narymbetov, B.Zh, Khasanov, S.S., Rozenberg, L.P., Shibaeva, R.P., Bazhenov, A.V., Gorbunov, A.V., Maksimuk, M.Yu, Konarev, D.V., Lyubovskaya, R.N., Ossipyan, Yu.A.

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Crystal structure and photoluminescence of single crystals of fullerene-9,9′- trans-bis(telluraxanthenyl) molecular complex: C 26H 18Te 2 · C 60 · CS 2 by Kveder, V.V., Steinman, E.A., Narymbetov, B.Zh, Khasanov, S.S., Rozenberg, L.P., Shibaeva, R.P., Bazhenov, A.V., Gorbunov, A.V., Maksimuk, M.Yu, Konarev, D.V., Lyubovskaya, R.N., Ossipyan, Yu.A.

“…The crystal structure of novel molecular complex of fullerene C 60 with 9,9′- trans-bis(telluraxantheny):C 26H 18Te 2 · C 60 · CS 2 (BTX · C 60 · CS 2) has…”
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