Search Results - "Stefanovich, Genrikh B."

Effect of indium low doping in ZnO based TFTs on electrical parameters and bias stress stability by Cheremisin, Alexander B., Kuznetsov, Sergey N., Stefanovich, Genrikh B.

“…Some applications of thin film transistors (TFTs) need the bottom-gate architecture and unpassivated channel backside. We propose a simple routine to fabricate…”
Get full text

Electron-beam modification and electrical property recovery dynamics of vanadium dioxide films in semiconducting and metallic phases by Belyaev, Maksim A., Velichko, Andrey A., Khanin, Samuil D., Stefanovich, Genrikh B., Gurtov, Valery A., Pergament, Alexander L.

“…In this paper we investigate electron-beam modification and the process of subsequent recovery of phase transition parameters of VO2-based films within 20-100…”
Get full text

Photoluminescence response of colloidal quantum dots on VO2 film across metal to insulator transition by Kuznetsov, Sergey N, Cheremisin, Alexander B, Stefanovich, Genrikh B

“…We have proposed a method to probe metal to insulator transition in VO 2 measuring photoluminescence response of colloidal quantum dots deposited on the VO 2…”
Get full text

Nonvolatile resistance switching in amorphous In–Zn–O films by Stefanovich, Genrikh B., Cho, Choong-Rae, Lee, Eun-Hong, Yoo, InKyenong

“…In amorphous In–Zn–O thin films we found a polar reversible sharp transition between a high-resistance state (HRS) with insulating properties and a degenerated…”
Get full text

Field-effect modulation of resistance in VO2 thin film at lower temperature by Belyaev, Maksim A., Putrolaynen, Vadim V., Velichko, Andrey A., Stefanovich, Genrikh B., Pergament, Alexander L.

“…In this paper we describe a prototype of a field effect transistor (FET) based on the Mott metal-insulator transition (MIT) in vanadium dioxide. It has been…”
Get full text

Field-effect modulation of resistance in VO 2 thin film at lower temperature by Belyaev, Maksim A., Putrolaynen, Vadim V., Velichko, Andrey A., Stefanovich, Genrikh B., Pergament, Alexander L.

Get full text

Field-effect modulation of resistance in VO sub(2) thin film at lower temperature by Belyaev, Maksim A, Putrolaynen, Vadim V, Velichko, Andrey A, Stefanovich, Genrikh B, Pergament, Alexander L

“…In this paper we describe a prototype of a field effect transistor (FET) based on the Mott metal-insulator transition (MIT) in vanadium dioxide. It has been…”
Get full text