Search Results - "Stefanov, Konstantin"
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Pinned Photodiode Imaging Pixel With Floating Gate Readout and Dual Gain
Published in IEEE transactions on electron devices (01-06-2023)“…We present an imaging pixel featuring dual conversion gain in a single exposure based on the pinned photodiode (PPD). The signal charge is first converted to…”
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Design and Performance of a Pinned Photodiode CMOS Image Sensor Using Reverse Substrate Bias
Published in Sensors (Basel, Switzerland) (03-01-2018)“…A new pinned photodiode (PPD) CMOS image sensor with reverse biased p-type substrate has been developed and characterized. The sensor uses traditional PPDs…”
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CMOS Image Sensor for Broad Spectral Range with >90% Quantum Efficiency
Published in Small (Weinheim an der Bergstrasse, Germany) (01-11-2023)“…Even though the recent progress made in complementary metal-oxide-semiconductor (CMOS) image sensors (CIS) has enabled numerous applications affecting our…”
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Proton and Gamma Radiation Effects on a Fully Depleted Pinned Photodiode CMOS Image Sensor
Published in IEEE transactions on nuclear science (01-06-2020)“…The radiation hardness of a fully depleted pinned photodiode (PPD) CMOS image sensor (CIS) has been evaluated with gamma and proton irradiations. The sensors…”
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Simulations and Design of a Single-Photon CMOS Imaging Pixel Using Multiple Non-Destructive Signal Sampling
Published in Sensors (Basel, Switzerland) (04-04-2020)“…A single-photon CMOS image sensor (CIS) design based on pinned photodiode (PPD) with multiple charge transfers and sampling is described. In the proposed pixel…”
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A Method to Achieve High Dynamic Range in a CMOS Image Sensor Using Interleaved Row Readout
Published in IEEE sensors journal (15-11-2022)“…We present a readout scheme for CMOS image sensors that can be used to achieve arbitrarily high dynamic range (HDR) in principle. The linear full well capacity…”
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Performance of Deep-Depletion Buried-Channel n -MOSFETs for CMOS Image Sensors
Published in IEEE transactions on electron devices (01-12-2013)“…Buried-channel (BC) MOSFETs are known to have better noise performance than their surface-channel (SC) counterparts when used as a source follower in modern…”
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Monolithic Active Pixel Sensors (MAPS) in a Quadruple Well Technology for Nearly 100% Fill Factor and Full CMOS Pixels
Published in Sensors (Basel, Switzerland) (02-09-2008)“…In this paper we present a novel, quadruple well process developed in a modern 0.18 mm CMOS technology called INMAPS. On top of the standard process, we have…”
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A Statistical Model for Signal-Dependent Charge Sharing in Image Sensors
Published in IEEE transactions on electron devices (01-01-2014)“…A Monte Carlo model based on the signal-dependent charge sharing mechanism during charge collection has been developed to explain the nonlinearity of the…”
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Radiation Hardness Study on a Fully Depleted Pinned Photodiode CMOS Image Sensor
Published in 2019 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC) (01-10-2019)“…The radiation hardness of a fully depleted Pinned Photodiode (PPD) CMOS image sensor (CIS) has been evaluated with gamma and proton irradiations. The sensors…”
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Conference Proceeding -
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Fully Depleted Pinned Photodiode CMOS Image Sensor With Reverse Substrate Bias
Published in IEEE electron device letters (01-01-2017)“…A new pixel design using fully depleted pinned photodiode (PPD) in a 180-nm CMOS image sensor (CIS) process has been developed and the first experimental…”
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Electron Multiplying Low-Voltage CCD With Increased Gain
Published in IEEE transactions on electron devices (01-07-2018)“…Novel designs for the gain elements in electron multiplying (EM) charge-coupled devices (CCDs) have been implemented in a device manufactured in a low-voltage…”
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Distributed Modular Monitoring (DiMMon) Approach to Supercomputer Monitoring
Published in 2015 IEEE International Conference on Cluster Computing (01-09-2015)“…In this work we propose a design for a new distributed modular monitoring system framework, which allows combining both monitoring tasks (supercomputer health…”
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Conference Proceeding -
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Evolution and Impact of Defects in a p-Channel CCD After Cryogenic Proton-Irradiation
Published in IEEE transactions on nuclear science (01-11-2017)“…The p-channel charge coupled devices (CCDs) have been shown to display improved tolerance to radiation-induced charge transfer inefficiency when compared with…”
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A Review of Supercomputer Performance Monitoring Systems
Published in Supercomputing frontiers and innovations (01-09-2021)Get full text
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CCD-based vertex detector for ILC
Published in Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment (10-12-2006)“…Charge Coupled Devices (CCDs) have been successfully used in several high-energy physics experiments over the last 20 years. Their small pixel size and…”
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Analysis of CPU Usage Data Properties and their possible impact on Performance Monitoring
Published in Supercomputing frontiers and innovations (01-12-2016)Get full text
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CCD developments for particle colliders
Published in Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment (01-09-2006)“…Charge Coupled Devices (CCDs) have been successfully used in several high-energy physics experiments over the last 20 years. Their small pixel size and…”
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Measurements of Charge Transfer Inefficiency in a CCD With High-Speed Column Parallel Readout
Published in IEEE transactions on nuclear science (01-10-2009)“…Charge Coupled Devices (CCDs) have been successfully used in several high energy physics experiments over the past two decades. Their high spatial resolution…”
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Journal Article