Search Results - "Stasys, Karolis"

  • Showing 1 - 5 results of 5
Refine Results
  1. 1

    RF power saving system for smart homes by Sapurov, Martynas, Baskys, Algirdas, Slivka, Kazimieras, Bleizgys, Vytautas, Stasys, Karolis, Simniskis, Rimantas, Zlosnikas, Valerijus, Urbonas, Kęstutis, Dervinis, Aldas, Paulikas, Sarunas, Paulauskas, Nerijus, Pomarnacki, Raimondas, Gursnys, Darius, Mazeiko, Leslav, Cymliakova, Violeta, Piatrou, Pavel, Dilys, Justas

    Published in Heliyon (15-11-2024)
    “…In this work the investigation results of harvesting the RF energy of a 2.4 GHz Wi-Fi signal for supply of smart home leak sensors network are presented. The…”
    Get full text
    Journal Article
  2. 2

    Bismuth quantum dots and strong infrared photoluminescence in migration-enhanced epitaxy grown GaAsBi-based structures by Butkutė, Renata, Stašys, Karolis, Pačebutas, Vaidas, Čechavičius, Bronislovas, Kondrotas, Rokas, Geižutis, Andrejus, Krotkus, Arūnas

    Published in Optical and quantum electronics (01-04-2015)
    “…The strong photoluminescence (PL) signal at wavelengths ranging from 1,300 to 1,500 nm was observed in GaAsBi epitaxial layers grown by migration-enhanced…”
    Get full text
    Journal Article
  3. 3
  4. 4

    Intervalley energy separation in the conduction band of InAs1−xBix determined by terahertz emission spectroscopy by Devenson, Jan, Stašys, Karolis, Norkus, Ričardas, Stanionytė, Sandra, Krotkus, Arūnas

    Published in Japanese Journal of Applied Physics (01-04-2023)
    “…InAsBi layers with different bismuth content were grown on InAs substrates by solid source MBE. The amount of bismuth incorporated in the layers was estimated…”
    Get full text
    Journal Article
  5. 5

    Intervalley energy separation in the conduction band of InAs 1−x Bi x determined by terahertz emission spectroscopy by Devenson, Jan, Stašys, Karolis, Norkus, Ričardas, Stanionytė, Sandra, Krotkus, Arūnas

    Published in Japanese Journal of Applied Physics (01-04-2023)
    “…InAsBi layers with different bismuth content were grown on InAs substrates by solid source MBE. The amount of bismuth incorporated in the layers was estimated…”
    Get full text
    Journal Article