Search Results - "Starschich, S."

Evidence for oxygen vacancies movement during wake-up in ferroelectric hafnium oxide by Starschich, S., Menzel, S., Böttger, U.

“…The wake-up effect which is observed in ferroelectric hafnium oxide is investigated in yttrium doped hafnium oxide prepared by chemical solution deposition. It…”
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Ferroelectric and piezoelectric properties of Hf1-xZrxO2 and pure ZrO2 films by Starschich, S., Schenk, T., Schroeder, U., Boettger, U.

“…Ferroelectric and piezoelectric properties of Hf1-xZrxO2 (HZO) and pure ZrO2 films with a layer thickness of up to 390 nm prepared by chemical solution…”
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Chemical solution deposition of ferroelectric yttrium-doped hafnium oxide films on platinum electrodes by Starschich, S., Griesche, D., Schneller, T., Waser, R., Böttger, U.

“…Ferroelectric hafnium oxide films were fabricated by chemical solution deposition with a remnant polarization of >13 μC/cm2. The samples were prepared with 5.2…”
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Record-high solar-to-hydrogen conversion efficiency based on a monolithic all-silicon triple-junction IBC solar cell by Nordmann, S., Berghoff, B., Hessel, A., Zielinsk, B., John, J., Starschich, S., Knoch, J.

“…We present a record-high solar-to-hydrogen conversion efficiency (STH) for monolithic all-silicon multi-junction solar devices. The device is based on an…”
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A monolithic all-silicon multi-junction solar device for direct water splitting by Nordmann, S., Berghoff, B., Hessel, A., Wilck, N., Osullivan, B., Debucquoy, M., John, J., Starschich, S., Knoch, J.

“…We present a silicon-based, monolithic multi-junction solar device that is suitable for the sustainable and reliable production of hydrogen. It is based on an…”
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Understanding of Trap-Assisted Tunneling Current - Assisted by Oxygen Vacancies in RuOx/SrTiO3/TiN MIM Capacitor for the DRAM Application by Kim, M.-S, Kaczer, B., Starschich, S., Popovici, M., Swerts, J., Richard, O., Tomida, K., Vrancken, C., Van Elshocht, S., Debusschere, I., Altimime, L., Kittl, J. A.

“…A transient leakage current was measured as a function of time for thin (~9 nm) strontium titanate (STO) capacitor dielectrics with RuO x as a bottom electrode…”
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