Search Results - "Starr, J.E."

Electrical properties of epitaxial 3C- and 6H-SiC p-n junction diodes produced side-by-side on 6H-SiC substrates by Neudeck, P.G., Larkin, D.J., Starr, J.E., Powell, J.A., Salupo, C.S., Matus, L.G.

“…3C-SiC (/spl beta/-SiC) and 6H-SiC p-n junction diodes have been fabricated in regions of both 3C-SiC and 6H-SiC epitaxial layers which were grown side-by-side…”
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The Bonded Resistance Strain Gage-Its Golden Anniversary by Starr, J.E.

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Greatly improved 3C-SiC p-n junction diodes grown by chemical vapor deposition by Neudeck, P.G., Larkin, D.J., Starr, J.E., Powell, J.A., Salupo, C.S., Matus, L.G.

“…The fabrication and initial electrical characterization of greatly improved 3C-SiC ( beta -SiC) p-n junction diodes are reported. These diodes, which were…”
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