Search Results - "Starczewska, A."

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  1. 1

    Transient characteristics and negative photoconductivity of SbSI humidity sensor by Nowak, M., Mistewicz, K., Nowrot, A., Szperlich, P., Jesionek, M., Starczewska, A.

    Published in Sensors and actuators. A. Physical. (01-04-2014)
    “…•Influence of H2O vapor on photoconductivity of SbSI nanowires.•Transient response of SbSI photoconductivity depends on relative humidity.•Positive and…”
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    Journal Article
  2. 2

    Determination of electrical conductivity type of SbSI nanowires by Mistewicz, K., Nowak, M., Starczewska, A., Jesionek, M., Rzychoń, T., Wrzalik, R., Guiseppi-Elie, A.

    Published in Materials letters (01-11-2016)
    “…This paper presents for the first time qualitatively different DC electrical responses of antimony sulfoiodide (SbSI) nanowires on hydrogen and oxygen. The…”
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  3. 3

    Fabrication and characterization of SbSI gel for humidity sensors by Nowak, M., Nowrot, A., Szperlich, P., Jesionek, M., Kępińska, M., Starczewska, A., Mistewicz, K., Stróż, D., Szala, J., Rzychoń, T., Talik, E., Wrzalik, R.

    Published in Sensors and actuators. A. Physical. (01-04-2014)
    “…•Sonochemical preparation of SbSI nanowires in water is presented for the first time.•Chemical, structural, optical and electrical characterization of SbSI…”
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  4. 4

    Influence of humidity on impedance of SbSI gel by Starczewska, A., Nowak, M., Szperlich, P., Toroń, B., Mistewicz, K., Stróż, D., Szala, J.

    Published in Sensors and actuators. A. Physical. (01-08-2012)
    “…This paper presents the effect of water vapor on the electrical response of antimony sulfoiodide (SbSI) nanowires obtained sonochemically to explore its…”
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  5. 5

    Dielectric and Structural Properties of Bi5Ti3FeO15 Ceramics Obtained by Solid-State Reaction Process from Mechanically Activated Precursors by Dercz, J., Starczewska, A., Dercz, G.

    Published in International journal of thermophysics (01-04-2011)
    “…Bi 5 Ti 3 FeO 15 (BTFO), an Aurivillius compound, was synthesized via sintering the Bi 2 O 3 and Fe 2 O 3 mixture and TiO 2 oxides. The precursor material was…”
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  6. 6
  7. 7

    Influence of the solvent on ultrasonically produced SbSI nanowires by Starczewska, A., Wrzalik, R., Nowak, M., Szperlich, P., Jesionek, M., Moskal, G., Rzychoń, T., Szala, J., Stróż, D., Maślanka, P.

    Published in Ultrasonics sonochemistry (01-04-2009)
    “…The influence of the substitution of methanol in place of ethanol during the ultrasonic production of antimony sulfoiodide (SbSI) nanowires is presented. The…”
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  8. 8

    Influence of Primary Milling on Structural and Electrical Properties of Bi4Ti3O12 Ceramics Obtained by Sintering Process by Dercz, J., Dercz, G., Prusik, K., Solecka, B., Starczewska, A., Ilczuk, J.

    “…In this article, the influence of primary mechanical milling of precursors on the microstructure and dielectric properties of Bi 4 Ti 3 O 12 ceramics was…”
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  9. 9

    Infrared spectroscopy of ferroelectric nanowires of antimony sulfoiodide by Starczewska, A., Wrzalik, R., Nowak, M., Szperlich, P., Bober, Ł., Szala, J., Stróż, D., Czechowicz, D.

    Published in Infrared physics & technology (01-03-2008)
    “…For the first time the infrared absorbance of the ultrasonically fabricated nanowires of antimony sulfoiodide (SbSI) has been measured from 750cm−1 to 4000−1…”
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  10. 10

    Influence of spatial distribution of radiation on steady-state photocarrier grating measurement by Nowak, M., Starczewska, A.

    Published in Journal of non-crystalline solids (01-12-1999)
    “…The influence of spatial distribution of radiation intensity on results of steady-state photocarrier grating (SSPG) measurements is analyzed. This technique…”
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  15. 15

    Steady-state photocarrier grating method of determining electronic states parameters in amorphous semiconductors by Nowak, Marian, Starczewska, Anna

    Published in Journal of non-crystalline solids (01-06-2005)
    “…The steady-state photocarrier grating (SSPG) technique is usually used for determining the diffusion length of carriers in amorphous semiconductors. This…”
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