Search Results - "Stameroff, Alexander N"
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1
Wide-Bandwidth Power-Combining and Inverse Class-F GaN Power Amplifier at X-Band
Published in IEEE transactions on microwave theory and techniques (01-03-2013)“…In this paper, we present a wide bandwidth power amplifier (PA) utilizing a Marchand balun to achieve power combining and inverse class-F (class-F -1 )…”
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Journal Article -
2
A Wideband Gain-Enhancement Technique for Distributed Amplifiers
Published in IEEE transactions on microwave theory and techniques (01-09-2020)“…In this article, a new bandpass distributed amplifier (DA) using a wideband gain-boosting technique is presented. In particular, a feedback network, including…”
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Journal Article -
3
A Wideband Highly Linear Distributed Amplifier Using Intermodulation Cancellation Technique for Stacked-HBT Cell
Published in IEEE transactions on microwave theory and techniques (01-07-2020)“…In this article, a wideband linearization technique for distributed amplifiers (DAs) is presented. In particular, an auxiliary transistor is employed to create…”
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Journal Article -
4
A 1-160-GHz InP Distributed Amplifier Using 3-D Interdigital Capacitors
Published in IEEE microwave and wireless components letters (01-05-2020)“…A wideband monolithic microwave/millimeter-wave integrated circuit (MMIC) distributed amplifier (DA) using a 3-D interdigital capacitor at the input of the…”
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Journal Article -
5
A 7-115-GHz Distributed Amplifier With 24-dBm Output Power Using Quadruple-Stacked HBT in InP
Published in IEEE microwave and wireless technology letters (Print) (01-06-2023)“…In this letter, we present the designs and development of a wideband, high output power quadruple-stacked heterojunction bipolar transistor (HBT) distributed…”
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Journal Article -
6
A DC-170 GHz InP Distributed Amplifier Using Transmission Line Loss Compensation Technique
Published in 2022 IEEE/MTT-S International Microwave Symposium - IMS 2022 (19-06-2022)“…In this paper, an input transmission line loss compensation technique using resistive-capacitive (RC) degeneration is employed in an Indium Phosphide (InP)…”
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Conference Proceeding -
7
A Review of Millimeter-wave InP Distributed Amplifiers
Published in 2022 IEEE 22nd Annual Wireless and Microwave Technology Conference (WAMICON) (27-04-2022)“…This article reviews millimeter-wave Indium Phosphide (InP) distributed amplifiers (DAs) developments, focusing on high power, high linearity, and design…”
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Conference Proceeding -
8
High efficiency push-pull inverse class F power amplifier using a balun and harmonic trap waveform shaping network
Published in 2010 IEEE MTT-S International Microwave Symposium (01-05-2010)“…We present the design and development of a push-pull inverse class F power amplifier in X band using a novel harmonic matching network. The harmonic matching…”
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Conference Proceeding -
9
A 1.5-88 GHz 19.5 dBm output power triple stacked HBT InP distributed amplifier
Published in 2017 IEEE MTT-S International Microwave Symposium (IMS) (01-06-2017)“…We demonstrate a wideband and high power distributed amplifier (DA) using an indium phosphide (InP) double heterojunction bipolar transistor (HBT) process. For…”
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Conference Proceeding -
10
Wide-Bandwidth Power-Combining and Inverse Class-F GaN Power Amplifier at [Formula Omitted]-Band
Published in IEEE transactions on microwave theory and techniques (01-03-2013)“…In this paper, we present a wide bandwidth power amplifier (PA) utilizing a Marchand balun to achieve power combining and inverse class-F (class-F[Formula…”
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Journal Article -
11
A Highly Linear InP Distributed Amplifier Using Ultra-wideband Intermodulation Feedforward Linearization
Published in 2018 IEEE/MTT-S International Microwave Symposium - IMS (01-06-2018)“…We demonstrate a highly linear wideband distributed amplifier (DA). For the first time, an intermodulation feedforward linearization technique is introduced in…”
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Conference Proceeding -
12
Design of a Wideband Bandpass Stacked HBT Distributed Amplifier in InP
Published in 2018 IEEE International Symposium on Circuits and Systems (ISCAS) (01-05-2018)“…We describe a wideband, bandpass distributed amplifier designed in an indium phosphide (InP) heterojunction bipolar transistor (HBT) process. A HBT gain cell…”
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Conference Proceeding