Search Results - "Stafsudd, O"
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Silicon optical fiber
Published in Optics express (10-11-2008)“…Described herein are initial experimental details and properties of a silicon core, silica glass-clad optical fiber fabricated using conventional optical fiber…”
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Pyroelectric Measurement of Surface Layer: The Case of Thin Film on Dielectric Substrate
Published in Ferroelectrics (18-11-2014)“…We propose an extension of the periodic temperature change (Chynoweth) technique for the measurement of pyroelectric coefficient in the case of a pyroelectric…”
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Prospects for Silicon Mid-IR Raman Lasers
Published in IEEE journal of selected topics in quantum electronics (01-11-2006)“…This paper presents the case for the silicon Raman laser as a potential source for the technologically important midwave infrared (MWIR) region of the optical…”
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Impurity concentration and temperature dependence of the refractive indices of Er3+ doped ceramic Y2O3
Published in Optics express (13-02-2012)“…The refractive indices and thermo-optic coefficients for varying concentrations of Er3+ doped polycrystalline yttria were measured at a variety of wavelengths…”
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Reactive molten core fabrication of glass-clad amorphous and crystalline oxide optical fibers
Published in Optical materials express (01-02-2012)“…Described herein are glass-clad optical fibers, fabricated using a molten core fiber draw process, comprising oxide cores in the Bi sub(2)O sub(3) - GeO sub(2)…”
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Planar microwave integrated phase-shifter design with high purity ferroelectric material
Published in IEEE transactions on microwave theory and techniques (01-06-1997)“…Ferroelectric materials (FEM's) are very attractive because their dielectric constant can be modulated under the effect of an externally applied electric field…”
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Synthesis, Structure, and Dielectric Properties of (Bi1/2Ag1/2)TiO3
Published in Chemistry of materials (18-01-1999)“…The compound Bi1/2Ag1/2TiO3 has been synthesized, for the first time, at 14−14.5 GPa and 1000 °C using the uniaxial split sphere anvil type press (USSA-2000)…”
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NOVEL APPROACH FOR IDENTIFYING AND SYNTHESISING HIGH DIELECTRIC MATERIALS
Published in Journal of materials research (01-08-1999)“…Modern telecommunications require materials with high dielectric constants (k). The number of suitable elements ultimately limits one approach to the discovery…”
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Generation of Q-switched Er:YAG laser pulses using evanescent wave absorption in ethanol
Published in Applied physics letters (04-05-1998)“…We report on a technique of passively Q switching an Er:YAG laser operating at 2.94 μm. The Q switch consists of a high refractive index prism having one total…”
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Dielectric relaxation in ceramics with an intragrain concentration gradient
Published in Journal of the European Ceramic Society (01-08-2002)“…We created a material with a composition gradient within each grain. Due to the graded composition the ceramic does not show a sharp change in dielectric…”
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Preparation and properties of laser dye-ORMOSIL composites
Published in Journal of materials science (15-10-1992)Get full text
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Electronic effects of ion mobility in semiconductors: semionic behaviour of CuInSe2
Published in The Journal of physics and chemistry of solids (01-09-1995)Get full text
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Impurity concentration and temperature dependence of the refractive indices of Er^3+doped ceramic Y_2O_3
Published in Optics express (13-02-2012)Get full text
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Principle of Low-Energy Electron Beam-Induced Current Imaging for Ferroelectric Thin Films
Published in Advanced materials (Weinheim) (01-01-2000)“…Spontaneous polarization in ferroelectric thin films can be measured accurately and at very fine resolution using the new technique presented here—low‐energy…”
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Amplification of light propagating through a fiber by evanescent wave coupling
Published in IEEE journal of quantum electronics (01-12-1981)Get full text
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Efficient lateral minority carrier transport in proton-implanted p -type silicon
Published in Applied physics letters (03-07-1995)“…A highly efficient lateral transport mechanism has been observed in stable defect layers (SDL) in p-type silicon. The SDLs were produced by proton implantation…”
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Line competition in the neutral argon laser
Published in IEEE journal of quantum electronics (01-12-1972)“…Uncertainties in transition assignments for the neutral argon laser lines at 1.792 and 2.208 μm have been resolved by operation of a CW neutral argon laser…”
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Laser action in selected compounds containing C, N, and H or D
Published in IEEE journal of quantum electronics (01-11-1967)“…Laser action was found in electrical discharge containing carbon, nitrogen, and hydrogen or deuterium in their elemental forms. The wavelengths of oscillation…”
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Quantification and modeling of the dynamic changes in the absorption coefficient of water at lambda = 2.94 mum
Published in IEEE journal of selected topics in quantum electronics (01-11-2001)“…A stable, high-energy Q-switched Er:YAG laser operating at 2.94 mum with a nearly diffraction-limited spatial beam profile was used to quantify the dynamic…”
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