Search Results - "Stȩpniewski, R."

Excitonic luminescence of iodine-intercalated HfS2 by Zawadzka, N., Woźniak, T., Strawski, M., Antoniazzi, I., Grzeszczyk, M., Olkowska-Pucko, K., Muhammad, Z., Ibanez, J., Zhao, W., Jadczak, J., Stępniewski, R., Babiński, A., Molas, M. R.

“…Photoluminescence from bulk HfS2 grown by the chemical vapor transport method is reported. A series of emission lines is apparent at low temperature in the…”
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Direction-sensitive graphene flow sensor by Kaźmierczak, P., Binder, J., Boryczko, K., Ciuk, T., Strupiński, W., Stępniewski, R., Wysmołek, A.

“…Graphene flow sensors not only hold great prospects for applications but also encounter many difficulties, such as unwanted electrochemical phenomena, low…”
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Graphene Epitaxy by Chemical Vapor Deposition on SiC by Strupinski, W, Grodecki, K, Wysmolek, A, Stepniewski, R, Szkopek, T, Gaskell, P. E, Grüneis, A, Haberer, D, Bozek, R, Krupka, J, Baranowski, J. M

“…We demonstrate the growth of high quality graphene layers by chemical vapor deposition (CVD) on insulating and conductive SiC substrates. This method provides…”
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Towards practical applications of quantum emitters in boron nitride by Koperski, M., Pakuła, K., Nogajewski, K., Dąbrowska, A. K., Tokarczyk, M., Pelini, T., Binder, J., Fąs, T., Suffczyński, J., Stępniewski, R., Wysmołek, A., Potemski, M.

“…We demonstrate quantum emission capabilities from boron nitride structures which are relevant for practical applications and can be seamlessly integrated into…”
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Structural investigations of hydrogenated epitaxial graphene grown on 4H-SiC (0001) by Tokarczyk, M., Kowalski, G., Możdżonek, M., Borysiuk, J., Stępniewski, R., Strupiński, W., Ciepielewski, P., Baranowski, J. M.

“…Structural investigations of hydrogenated epitaxial graphene grown on SiC(0001) are presented. It is shown that hydrogen plays a dual role. In addition to…”
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Polariton effects in reflectance and emission spectra of homoepitaxial GaN by Stȩpniewski, R., Korona, K. P., Wysmołek, A., Baranowski, J. M., Pakuła, K., Potemski, M., Martinez, G., Grzegory, I., Porowski, S.

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STS observations of deep defects within laser-illuminated graphene/MOVPE-h-BN heterostructures by Wlasny, I., Pakula, K., Stepniewski, R., Strupinski, W., Pasternak, I., Baranowski, J. M., Wysmolek, A.

“…We present the study of metalorganic vapor phase epitaxy hexagonal boron nitride (MOVPE-h-BN) and graphene/MOVPE-h-BN heterostructures under the illumination…”
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Fine structure of effective mass acceptors in gallium nitride by Stepniewski, R, Wysmołek, A, Potemski, M, Pakuła, K, Baranowski, J M, Grzegory, I, Porowski, S, Martinez, G, Wyder, P

“…Magnetoluminescence of the exciton bound to a neutral acceptor was measured to investigate the electronic structure of a shallow acceptor center in GaN. The…”
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Delamination of Large Area Layers of Hexagonal Boron Nitride Grown by MOVPE by Iwański, J., Dąbrowska, A.K., Tokarczyk, M., Binder, J., Stępniewski, R., Wysmołek, A.

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Micro-Raman spectroscopy of graphene grown on stepped 4H-SiC (0001) surface by Grodecki, K., Bozek, R., Strupinski, W., Wysmolek, A., Stepniewski, R., Baranowski, J. M.

“…Graphene grown by chemical vapor deposition on 4H-SiC (0001) was studied using micro-Raman spectroscopy and atomic force microscopy (AFM). AFM revealed that…”
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In Situ Raman Spectroscopy of Solution-Gated Graphene on Copper by Binder, J., Stępniewski, R., Strupiński, W., Wysmołek, A.

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Low field excitonic Zeeman splittings in gallium nitride by Golnik, A, Mac, W, Pakuła, K, Stȩpniewski, R, Testelin, C, Gaj, J.A

“…Reflectivity and Kerr rotation were measured on a GaN layer grown by MOVPE on sapphire substrate. Fine excitonic structures were observed. Energies of A, B,…”
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Quasiclassical cyclotron resonance of Dirac fermions in highly doped graphene by Witowski, A. M., Orlita, M., Stȩpniewski, R., Wysmołek, A., Baranowski, J. M., Strupiński, W., Faugeras, C., Martinez, G., Potemski, M.

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Observation of Native Ga Vacancies in GaN by Positron Annihilation by Saarinen, K., Laine, T., Kuisma, S., Nissilä, J., Hautojärvi, P., Dobrzynski, L., Baranowski, J. M., Pakula, K., Stepniewski, R., Wojdak, M., Wysmolek, A., Suski, T., Leszczynski, M., Grzegory, I., Porowski, S.

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Contactless electroreflectance studies of surface potential barrier in AlGaN/n-AlGaN structures with various Al concentrations by Janicki, Ł., Kudrawiec, R., Pakuła, K., Stępniewski, R., Misiewicz, J.

“…Contactless electroreflectance spectroscopy has been applied to study the surface potential barrier in AlxGa1−xN/n‐AlxGa1−xN structures with 0 ≤ x ≤ 0.25 grown…”
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Structural and Optical Properties of Boron Nitride Grown by MOVPE by Dąbrowska, A.K., Pakuła, K., Bożek, R., Rousset, J.G., Ziółkowska, D., Gołasa, K., Korona, K.P., Wysmołek, A., Stępniewski, R.

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Light Induced Modification of Graphene Oxide Layers on GaN Basis by Łopion, A., Stobiński, L., Pakuła, K., Bożek, R., Kaźmierczak, P., Wysmołek, A., Stępniewski, R.

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Graphene Based Flow Sensors by Kaźmierczak, P., Binder, J., Boryczko, K., Ciuk, T., Strupiński, W., Stępniewski, R., Wysmołek, A.

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Determination of Si δ-Doping Concentration in GaN by Electroreflectance by Drabińska, A., Korona, K.P., Bożek, R., Babiński, A., Baranowski, J.M., Pacuski, W., Stȩpniewski, R., Tomaszewicz, T.

“…Electroreflectance bias–wavelength mapping is used for the first time for characterization of δ‐doped GaN layer. Electric field above and below the δ‐doping…”
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Magneto-spectroscopy of donor-bound excitons in GaN by Wysmolek, A., Stępniewski, R., Potemski, M.

“…Different emission channels, due to recombination of neutral donor-bound excitons (D 0X) in GaN, are discussed from photoluminescence experiments performed in…”
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