Impact of Unconventional Torque on the Performance of Weyl-Semimetal-Based SOT-MTJ: A Micromagnetic Study

Impact of Unconventional Torque on the Performance of Weyl-Semimetal-Based SOT-MTJ: A Micromagnetic Study

Effective spin manipulation is one of the fundamental aspects of spin-orbit torque (SOT) magnetic tunnel junction (MTJ) for low-power logic and memory applications. The performance of the Transitional-Metal dichalcogenides (TMD) based SOT-MTJ is examined in this work in relation to the out-of-plane...

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Bibliographic Details
Published in:IEEE transactions on electron devices Vol. 71; no. 3; pp. 2177 - 2183
Main Authors: M, Shashidhara, Srivatsava, Shobhit, Panwar, Sourabh, Nehra, Vikas, Kamal, Rajeev, Acharya, Abhishek
Format: Journal Article
Language:English
Published: New York IEEE 01-03-2024
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects:
2-D materials
Critical current density
Dzyaloshinskii–Moriya interaction (DMI)
Energy dissipation
Magnetic switching
magnetic tunnel junction (MTJ)
Magnetic tunneling
Magnetization
Mathematical models
Micromagnetics
Modelling
Performance evaluation
Power management
spin hall-assisted MTJ
spin orbit torque (SOT)-MTJ
Switches
Temperature effects
Torque
transition metal dichalcogenides (TMD)
Tunnel junctions
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Summary:Effective spin manipulation is one of the fundamental aspects of spin-orbit torque (SOT) magnetic tunnel junction (MTJ) for low-power logic and memory applications. The performance of the Transitional-Metal dichalcogenides (TMD) based SOT-MTJ is examined in this work in relation to the out-of-plane spin momentum in Weyl semimetal (WS). Micromagnetic simulations have been performed to evaluate the characteristics of the device performance under the interfacial Dzyaloshinskii-Moriya interaction (DMI) effect and random thermal field. By modeling the modified LLGS equation in the macromagnetic modeling framework, the field-free switching condition resulting from unconventional torque from the WS has been verified by this investigation without considering any external magnetic field (EMF). The micromagnetic investigation reveals that the out-of-plane torque modulates the device performance in a substantial way. The combined action of conventional and unconventional torque results in the deterministic switching of magnetization in the absence of an EMF. When compared to the conventional SOT-MTJ, the critical current density drops to 3.5% of its initial value, with the effective Spin-Hall efficiency of TMD ranging from 0.1 to 3.5. However, the magnetization switching speed of the device is impacted when the out-of-plane torque outweighs the in-plane component. Yet, the switching speed is decreased by a factor of <inline-formula> <tex-math notation="LaTeX">\sim 0.5\times - 0.7\times </tex-math></inline-formula> thanks to the stochastic temperature effects. Furthermore, we demonstrate the significance of out-of-plane torque in optimizing power dissipation density (PDD) in TMD-based SOT-MTJ.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2024.3353707