Search Results - "Spry, David J."

Demonstration of 4H-SiC Digital Integrated Circuits Above 800 °C by Neudeck, Philip G., Spry, David J., Liangyu Chen, Prokop, Norman F., Krasowski, Michael J.

“…Short-term demonstrations of packaged 4H-SiC junction field-effect transistor (JFET) logic integrated circuits (ICs) at temperatures exceeding 800 °C in air…”
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Extreme temperature 6H-SiC JFET integrated circuit technology by Neudeck, Philip G., Garverick, Steven L., Spry, David J., Chen, Liang-Yu, Beheim, Glenn M., Krasowski, Michael J., Mehregany, Mehran

“…Extreme temperature semiconductor integrated circuits (ICs) are being developed for use in the hot sections of aircraft engines and other harsh‐environment…”
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Operational Testing of 4H-SiC JFET ICs for 60 Days Directly Exposed to Venus Surface Atmospheric Conditions by Neudeck, Philip G., Chen, Liangyu, Meredith, Roger D., Lukco, Dorothy, Spry, David J., Nakley, Leah M., Hunter, Gary W.

“…Prolonged Venus surface missions (lasting months instead of hours) have proven infeasible to date in the absence of a complete suite of electronics able to…”
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Prolonged 500 °C Demonstration of 4H-SiC JFET ICs With Two-Level Interconnect by Spry, David J., Neudeck, Philip G., Liangyu Chen, Lukco, Dorothy, Chang, Carl W., Beheim, Glenn M.

“…This letter reports fabrication and testing of integrated circuits (ICs) with two levels of interconnect that consistently achieve greater than 1000 h of…”
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Cross-sectional TEM and KOH-Etch Studies of Extended Defects in 3C-SiC p+n Junction Diodes Grown on 4H-SiC Mesas by Speer, Kevin M., Neudeck, Philip G., Spry, David J., Trunek, Andrew J., Pirouz, Pirouz

“…This article presents cross-sectional transmission electron microscopy and molten-potassium hydroxide etching studies of (111) 3C-SiC diodes which we…”
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The Path Towards Realistic ASIC Electronics Deployment Into Previously Impractical Extreme Application Environments by Neudeck, Philip G., Spry, David J., Krasowski, Michael J., Chen, Liangyu

“…Substantial expansion of the practical environmental envelope for integrated circuit (IC) operation offers important benefits to a variety of automotive,…”
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Prolonged silicon carbide integrated circuit operation in Venus surface atmospheric conditions by Neudeck, Philip G., Meredith, Roger D., Chen, Liangyu, Spry, David J., Nakley, Leah M., Hunter, Gary W.

“…The prolonged operation of semiconductor integrated circuits (ICs) needed for long-duration exploration of the surface of Venus has proven insurmountably…”
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Stable Electrical Operation of 6H-SiC JFETs and ICs for Thousands of Hours at 500 °C by NEUDECK, Philip G, SPRY, David J, PROKOP, Norman F, CHEN, Liang-Yu, BEHEIM, Glenn M, OKOJIE, Robert S, CHANG, Carl W, MEREDITH, Roger D, FERRIER, Terry L, EVANS, Laura J, KRASOWSKI, Michael J

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Experimentally observed electrical durability of 4H-SiC JFET ICs operating from 500 °C to 700 °C by Neudeck, Philip G., Spry, David J., Liangyu Chen, Lukco, Dorothy, Chang, Carl W., Beheim, Glenn M.

“…Prolonged 500°C to 700°C electrical testing data from 4H-SiC junction field effect transistor (JFET) integrated circuits (ICs) are combined with post-testing…”
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Study of Defect Structures in 6H-SiC a/m-Plane Pseudofiber Crystals Grown by Hot-Wall CVD Epitaxy by Goue, Ouloide Y., Raghothamachar, Balaji, Yang, Yu, Guo, Jianqiu, Dudley, Michael, Kisslinger, Kim, Trunek, Andrew J., Neudeck, Philip G., Spry, David J., Woodworth, Andrew A.

“…Structural perfection of silicon carbide (SiC) single crystals is essential to achieve high-performance power devices. A new bulk growth process for SiC…”
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Stable Electrical Operation of 6H-SiC JFETs and ICs for Thousands of Hours at 500 ^\hbox by Neudeck, P.G., Spry, D.J., Liang-Yu Chen, Beheim, G.M., Okojie, R.S., Chang, C.W., Meredith, R.D., Ferrier, T.L., Evans, L.J., Krasowski, M.J., Prokop, N.F.

“…The fabrication and testing of the first semiconductor transistors and small-scale integrated circuits (ICs) to achieve up to 3000 h of stable electrical…”
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Study of defect structures in 6H-SiC a/m-plane pseudofiber crystals grown by hot-wall CVD epitaxy by Goue, Ouloide Y., Raghothamachar, Balaji, Yang, Yu, Guo, Jianqiu, Dudley, Michael, Kisslinger, Kim, Trunek, Andrew J., Neudeck, Philip G., Spry, David J., Woodworth, Andrew A.

“…Structural perfection of silicon carbide (SiC) single crystals is essential to achieve high-performance power devices. A new bulk growth process for SiC…”
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Prolonged silicon carbide integrated circuit operation in Venus surfaceatmospheric conditions by Neudeck, Philip G, Meredith, Roger D, Chen, Liangyu, Spry, David J, Nakley, Leah M, Hunter, Gary W

“…The prolonged operation of semiconductor integrated circuits(ICs) needed forlong-duration exploration of the surface of Venus has proven insurmountably…”
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Cross-sectional TEM and KOH-Etch Studies of Extended Defects in 3C-SiC p^sup +^n Junction Diodes Grown on 4H-SiC Mesas by Speer, Kevin M, Neudeck, Philip G, Spry, David J, Trunek, Andrew J, Pirouz, Pirouz

“…This article presents cross-sectional transmission electron microscopy and molten-potassium hydroxide etching studies of (111) 3C-SiC diodes which we…”
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Cross-sectional TEM and KOH-Etch Studies of Extended Defects in 3C-SiC p+n Junction Diodes Grown on 4H-SiC Mesas: Groups in Nitrides, SiC and ZnO by SPEER, Kevin M, NEUDECK, Philip G, SPRY, David J, TRUNEK, Andrew J, PIROUZ, Pirouz

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Aluminum Scandium Nitride as a Functional Material at 1000{\deg}C by Gaddam, Venkateswarlu, Dabas, Shaurya S, Gao, Jinghan, Spry, David J, Baucom, Garrett, Rudawski, Nicholas G, Yin, Tete, Angerhofer, Ethan, Neudeck, Philip G, Kim, Honggyu, Feng, Philip X. -L, Sheplak, Mark, Tabrizian, Roozbeh

“…Aluminum scandium nitride (AlScN) has emerged as a highly promising material for high-temperature applications due to its robust piezoelectric, ferroelectric,…”
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A High Frequency (HF) inductive power transfer circuit for high temperature applications using SiC Schottky diodes by Jordan, Jennifer L., Ponchak, George E., Spry, David J., Neudeck, Philip G.

“…Wireless sensors placed in high temperature environments, such as aircraft engines, are desirable to reduce the mass and complexity of routing wires. While…”
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Novel High Temperature Capacitive Pressure Sensor Utilizing SiC Integrated Circuit Twin Ring Oscillators by Scardelletti, Maximilian C., Neudeck, Philip G., Spry, David J., Meredith, Roger D., Jordan, Jennifer L., Prokop, Norman F., Krasowski, Michael J., Beheim, Glenn M., Hunter, Gary W.

“…This paper describes initial development and testing of a novel high temperature capacitive pressure sensor system. The pressure sensor system consists of two…”
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Novel light-emitting devices based on pyridine-containing conjugated polymers by Wang, Y.Z., Gebler, D.D., Spry, D.J., Fu, D.K., Swager, T.M., MacDiamid, A.G., Epstein, A.J.

“…We present novel light-emitting devices based on several pyridine-containing conjugated polymers and copolymers in various device configurations. The high…”
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