Search Results - "Spruytte, S.G."

Low-threshold oxide-confined GaInNAs long wavelength vertical cavity lasers by Larson, M.C., Coldren, C.W., Spruytte, S.G., Petersen, H.E., Harris, J.S.

“…We report, for the first time, room temperature continuous-wave (CW) operation of GaInNAs vertical-cavity surface-emitting laser diodes emitting at a…”
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Nitrogen incorporation in group III–nitride–arsenide materials grown by elemental source molecular beam epitaxy by Spruytte, S.G, Larson, M.C, Wampler, W, Coldren, C.W, Petersen, H.E, Harris, J.S

“…Group III–nitride–arsenides are promising materials for long wavelength opto-electronic devices grown on GaAs substrates. The growth of nitride–arsenides was…”
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Deep-level defects in MBE-grown Ga(As,N) layers by Krispin, P., Spruytte, S.G., Harris, J.S., Ploog, K.H.

“…Deep levels are examined in the whole band gap of strained Ga(As,N) with 3% GaN composition by deep-level transient Fourier spectroscopy on as-grown as well as…”
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Low threshold current continuous-wave GaInNAs/GaAs VCSELs by Larson, M.C., Coldren, C.W., Spruytte, S.G., Petersen, H.E., Harris, J.S.

“…Vertical cavity surface-emitting lasers (VCSELs) emitting near 0.85 /spl mu/m are becoming increasingly important for short-haul optical fiber transmission…”
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Pulsed 25-108/spl deg/C operation of GaInNAs multiple quantum well vertical cavity lasers by Coldren, C.W., Larson, M.C., Spruytte, S.G., Garrett, H.E., Harris, J.S.

“…Summary form only given.GaAs-based vertical cavity surface emitting laser (VCSEL) diodes are becoming increasingly important in transmitters. By using GaInNAs…”
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Room temperature continuous-wave operation of GaInNAs long wavelength VCSELs by Larson, M.C., Coldren, C.W., Spruytte, S.G., Petersen, H.E., Harris, J.S.

“…Vertical cavity surface-emitting lasers (VCSELs) are becoming increasingly important for short-haul optical fiber transmission systems. Given the commercial…”
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GaInNAs long wavelength vertical cavity lasers by Larson, M.C., Coldren, C.W., Spruytte, S.G., Petersen, H.E., Garrett, H.E., Harris, J.S.

“…We describe low-threshold (/spl sim/1 mA) GaInNAs VCSELs emitting at a wavelength of 1.2 /spl mu/m under continuous-wave room temperature operation. The bottom…”
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Group III-nitride-arsenide long wavelength lasers grown by elemental source molecular beam epitaxy by Coldren, C.W., Spruytte, S.G., Harris, J.S., Larson, M.C.

“…Employing InGaNAs materials, low wavelength active regions with emission at 1.3 /spl mu/m have been developed on GaAs substrates. Broad area, single quantum…”
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Molecular beam epitaxial growth of group III-nitride-arsenides for long wavelength optoelectronics by Spruytte, S.G., Larson, M.C., Wampler, W., Coldren, C.W., Harris, J.S.

“…Nitride-arsenides are promising materials for long wavelength opto-electronic devices grown on GaAs substrates. The photoluminescence intensity of GaNAs and…”
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Incorporation of nitrogen in group III-nitrides-arsenides grown by molecular beam epitaxy (MBE) by Spruytte, S.G., Coldren, C.W., Larson, M.C., Harris, J.S.

“…Group III-nitride-arsenides were grown by MBE employing a nitrogen radio frequency (rf) plasma. To improve the luminescence efficiency, both GaNAs and GaInNAs…”
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