Search Results - "Sprengel, Stephan"

III-V-on-Silicon Photonic Integrated Circuits for Spectroscopic Sensing in the 2-4 μm Wavelength Range by Wang, Ruijun, Vasiliev, Anton, Muneeb, Muhammad, Malik, Aditya, Sprengel, Stephan, Boehm, Gerhard, Amann, Markus-Christian, Šimonytė, Ieva, Vizbaras, Augustinas, Vizbaras, Kristijonas, Baets, Roel, Roelkens, Gunther

“…The availability of silicon photonic integrated circuits (ICs) in the 2-4 μm wavelength range enables miniature optical sensors for trace gas and bio-molecule…”
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2.3 µm range InP-based type-II quantum well Fabry-Perot lasers heterogeneously integrated on a silicon photonic integrated circuit by Wang, Ruijun, Sprengel, Stephan, Boehm, Gerhard, Muneeb, Muhammad, Baets, Roel, Amann, Markus-Christian, Roelkens, Gunther

“…Heterogeneously integrated InP-based type-II quantum well Fabry-Perot lasers on a silicon waveguide circuit emitting in the 2.3 µm wavelength range are…”
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2 μm wavelength range InP-based type-II quantum well photodiodes heterogeneously integrated on silicon photonic integrated circuits by Wang, Ruijun, Sprengel, Stephan, Muneeb, Muhammad, Boehm, Gerhard, Baets, Roel, Amann, Markus-Christian, Roelkens, Gunther

“…The heterogeneous integration of InP-based type-II quantum well photodiodes on silicon photonic integrated circuits for the 2 µm wavelength range is presented…”
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Broad wavelength coverage 23 μm III-V-on-silicon DFB laser array by Wang, Ruijun, Sprengel, Stephan, Boehm, Gerhard, Baets, Roel, Amann, Markus-Christian, Roelkens, Gunther

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Heterogeneously integrated III–V-on-silicon 2.3x μm distributed feedback lasers based on a type-II active region by Wang, Ruijun, Sprengel, Stephan, Malik, Aditya, Vasiliev, Anton, Boehm, Gerhard, Baets, Roel, Amann, Markus-Christian, Roelkens, Gunther

“…We report on 2.3x μm wavelength InP-based type-II distributed feedback (DFB) lasers heterogeneously integrated on a silicon photonics integrated circuit. In…”
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Widely Tunable III-V/Silicon Lasers for Spectroscopy in the Short-Wave Infrared by Wang, Ruijun, Van Campenhout, Joris, Baets, Roel, Amann, Markus-Christian, Roelkens, Gunther, Haq, Bahawal, Sprengel, Stephan, Malik, Aditya, Vasiliev, Anton, Boehm, Gerhard, Simonyte, Ieva, Vizbaras, Augustinas, Vizbaras, Kristijonas

“…Integrating III-V gain material with silicon photonic integrated circuits enables the realization of advanced laser sources and full integrated systems for…”
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Wavelength Dependence of Efficiency Limiting Mechanisms in Type-I Mid-Infrared GaInAsSb/GaSb Lasers by Eales, Timothy David, Marko, Igor P., Ikyo, Barnabas Achakpa, Adams, Alfred R., Arafin, Shamsul, Sprengel, Stephan, Amann, Markus-Christian, Sweeney, Stephen J.

“…The efficiency limiting mechanisms in type-I GaInAsSb-based quantum well (QW) lasers, emitting at 2.3, 2.6 and 2.9 μm, are investigated. Temperature…”
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Type-II InP-based lasers emitting at 2.55 μ m by Sprengel, Stephan, Andrejew, Alexander, Vizbaras, Kristijonas, Gruendl, Tobias, Geiger, Kathrin, Boehm, Gerhard, Grasse, Christian, Amann, Markus-Christian

“…Room-temperature lasing at 2.55 μ m is reported for InP-based GaInAs/GaAsSb type-II quantum well lasers in pulsed mode up to 42°C. This record long-wavelength…”
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InP-Based Vertical-Cavity Surface-Emitting Lasers With Type-II Quantum Wells by Sprengel, Stephan, Veerabathran, Ganpath Kumar, Federer, Florian, Andrejew, Alexander, Amann, Markus-Christian

“…InP-based type-II quantum wells are a promising concept for long wavelength lasers beyond 2 μm. In this paper, recently developed vertical-cavity…”
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Up to 3 μ m light emission on InP substrate using GaInAs/GaAsSb type-II quantum wells by Sprengel, Stephan, Grasse, Christian, Vizbaras, Kristijonas, Gruendl, Tobias, Amann, Markus-Christian

“…We present 3 μ m photoluminescence at room temperature, which is achieved with GaInAs/GaAsSb type-II quantum wells on InP substrate. This long-wavelength…”
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III-V-on-silicon 2-µm-wavelength-range wavelength demultiplexers with heterogeneously integrated InP-based type-II photodetectors by Wang, Ruijun, Muneeb, Muhammad, Sprengel, Stephan, Boehm, Gerhard, Malik, Aditya, Baets, Roel, Amann, Markus-Christian, Roelkens, Gunther

“…2-µm-wavelength-range silicon-on-insulator (SOI) arrayed waveguide gratings (AWGs) with heterogeneously integrated InP-based type-II quantum well…”
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InP-based 2.8–3.5  μ m resonant-cavity light emitting diodes based on type-II transitions in GaInAs/GaAsSb heterostructures by Grasse, Christian, Wiecha, Peter, Gruendl, Tobias, Sprengel, Stephan, Meyer, Ralf, Amann, Markus-Christian

“…We present InP-based resonant-cavity light emitting diodes (LEDs), which are emitting at 2.8 μm, 3.3 μm, and 3.5 μm and were grown by metalorganic vapor phase…”
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InP-Based Type-II Quantum-Well Lasers and LEDs by Sprengel, S., Grasse, C., Wiecha, P., Andrejew, A., Gruendl, T., Boehm, G., Meyer, R., Amann, M.

“…Type-II InP-based light sources provide a promising concept for mid-infrared lasers. These have recently made huge progress, as the first electrically and…”
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InP-based 2.8--3.5??m resonant-cavity light emitting diodes based on type-II transitions in GaInAs/GaAsSb heterostructures by Grasse, Christian, Wiecha, Peter, Gruendl, Tobias, Sprengel, Stephan, Meyer, Ralf, Amann, Markus-Christian

“…We present InP-based resonant-cavity light emitting diodes (LEDs), which are emitting at 2.8 mu m, 3.3 mu m, and 3.5 mu m and were grown by metalorganic vapor…”
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GaInAs/GaAsSb-based type-II micro-cavity LED with 2–3μm light emission grown on InP substrate by Grasse, Christian, Gruendl, Tobias, Sprengel, Stephan, Wiecha, Peter, Vizbaras, Kristijonas, Meyer, Ralf, Amann, Markus-Christian

“…In this paper we present the epitaxial growth and characterization of an InP-based micro-cavity light emitting diode (LED) with up to 3μm light emission by…”
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Wavelength dependence of efficiency limiting mechanisms in type I GaInAsSb/GaSb lasers emitting in the mid-infrared by Eales, Timothy, Marko, Igor P., Ikyo, Barnabas A., Adams, Alf R., Arafin, Shamsul, Sprengel, Stephan, Amann, Markus C., Sweeney, Stephen J.

“…Type-I GaInAsSb lasers, emitting between 2-3 μm are investigated using temperature and high pressure characterization techniques. A model of the Auger…”
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InP-Based Type-II Heterostructure Lasers for 2.5µm Working CW at Room Temperature and Above by Sprengel, Stephan, Veerabathran, Ganpath Kumar, Koeninger, Anna, Federer, Florian, Boehm, Gerhard, Amann, Markus-Christian

“…We present InP-based type-II lasers at 2.5μm, utilizing W-shaped GaAsSb/GaInAs QWs with strongly improved threshold current densities, down to 104A/cm 2 per QW…”
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InP-Based Type-II Heterostructure Lasers for Wavelength above 2 µm by Sprengel, Stephan, Andrejew, Alexander, Veerabathran, Ganpath Kumar, Federer, Florian, Boehm, Gerhard, Grasse, Christian, Amann, Markus-Christian

“…We present an innovative concept for InP-based lasers utilizing the type-II band alignment between GaAsSb and GaInAs. With W-shaped QWs spontaneous room…”
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Light emission between 2 and 4 µm: Innovative active region designs for InP- and GaSb-based devices by Boehm, Gerhard, Sprengel, Stephan, Vizbaras, Kristijonas, Grasse, Christian, Gruendl, Tobias, Meyer, Ralf, Amann, Markus-Christian

“…This work shows different approaches to cover the spectral range from 2 to 4 μm with active regions based on InP and GaSb for devices suitable as light sources…”
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Extending lasing wavelength on InP with GaAsSb / GaInAs type-II active regions by Sprengel, S., Vizbaras, K., Andrejew, A., Gruendl, T., Geiger, K., Boehm, G., Grasse, C., Amann, M.

“…We present a new concept for type-II lasers on InP, utilizing W-shaped GaAsSb/GaInAs active regions. First lasers demonstrate emission at 2.55μm up to 42°C in…”
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