Search Results - "Spindler, Conrad"
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Revisiting radiative deep-level transitions in CuGaSe2 by photoluminescence
Published in Applied physics letters (18-07-2016)“…Recent defect calculations suggest that the open circuit voltage of CuGaSe2 solar cells can be limited by deep intrinsic electron traps by GaCu antisites and…”
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Journal Article -
2
Chemical instability at chalcogenide surfaces impacts chalcopyrite devices well beyond the surface
Published in Nature communications (20-07-2020)“…The electrical and optoelectronic properties of materials are determined by the chemical potentials of their constituents. The relative density of point…”
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Journal Article -
3
Sodium enhances indium-gallium interdiffusion in copper indium gallium diselenide photovoltaic absorbers
Published in Nature communications (26-02-2018)“…Copper indium gallium diselenide-based technology provides the most efficient solar energy conversion among all thin-film photovoltaic devices. This is…”
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4
Electrical characterization of Cu(In,Ga)Se 2 -solar cells by voltage dependent time-resolved photoluminescence
Published in Thin solid films (01-05-2015)Get full text
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5
The impact of Kelvin probe force microscopy operation modes and environment on grain boundary band bending in perovskite and Cu(In,Ga)Se2 solar cells
Published in Nano energy (01-10-2021)“…An in-depth understanding of the electronic properties of grain boundaries (GBs) in polycrystalline semiconductor absorbers is of high importance since their…”
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Journal Article -
6
Interdiffusion and Doping Gradients at the Buffer/Absorber Interface in Thin-Film Solar Cells
Published in ACS applied materials & interfaces (29-08-2018)“…An accurate determination of the net dopant concentration in photovoltaic absorbers is critical for understanding and optimizing solar cell performance. The…”
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7
Electrical characterization of Cu(In,Ga)Se2-solar cells by voltage dependent time-resolved photoluminescence
Published in Thin solid films (01-05-2015)“…Time-resolved photoluminescence (TRPL) is a promising method for the investigation of charge carrier dynamics and recombination kinetics in semiconductor…”
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Journal Article -
8
Revisiting radiative deep-level transitions in CuGaSe{sub 2} by photoluminescence
Published in Applied physics letters (18-07-2016)“…Recent defect calculations suggest that the open circuit voltage of CuGaSe{sub 2} solar cells can be limited by deep intrinsic electron traps by Ga{sub Cu}…”
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Journal Article -
9
The impact of Kelvin probe force microscopy operation modes and environment on grain boundary band bending in perovskite and Cu(In,Ga)Se 2 solar cells
Published in Nano energy (01-10-2021)Get full text
Journal Article -
10
Synthesis, theoretical and experimental characterisation of thin film Cu2Sn1-xGexS3 ternary alloys (x = 0 to 1): Homogeneous intermixing of Sn and Ge
Published in Acta materialia (01-06-2018)“…Cu2Sn1-xGexS3 is a p-type semiconductor alloy currently investigated for use as an absorber layer in thin film solar cells. The aim of this study is to…”
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11
Synthesis, theoretical and experimental characterisation of thin film Cu2Sn1-Ge S3 ternary alloys (x = 0 to 1): Homogeneous intermixing of Sn and Ge
Published in Acta materialia (01-06-2018)Get full text
Journal Article -
12
Surface characterization of epitaxial Cu-rich CuInSe2 absorbers
Published in 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) (01-06-2019)“…We investigated the electrical properties of epitaxial Cu-rich CuInSe 2 by Kelvin probe force microscopy (KPFM) under ambient and ultra-high vacuum conditions…”
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Conference Proceeding -
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The impact of Kelvin probe force microscopy operation modes and environment on grain boundary band bending in perovskite and Cu(In,Ga)Se2 solar cells
Published 07-04-2021“…An in-depth understanding of the electronic properties of grain boundaries (GB) in polycrystalline semiconductor absorbers is of high importance since their…”
Get full text
Journal Article